6 resultados para Bermuda Rise

em Cambridge University Engineering Department Publications Database


Relevância:

20.00% 20.00%

Publicador:

Resumo:

We present the results of an experimental investigation across a broad range of source Froude numbers, 0. 4 ≤ Fr 0 ≤ 45, into the dynamics, morphology and rise heights of Boussinesq turbulent axisymmetric fountains in quiescent uniform environments. Typically, these fountains are thought to rise to an initial height, z i, before settling back and fluctuating about a lesser (quasi-) steady height, z ss. Our measurements show that this is not always the case and the ratio of the fountain's initial rise height to steady rise height, λ = z i/z ss, varies widely, 0. 5 ≈ λ ≈ 2, across the range of Fr 0 investigated. As a result of near-ideal start-up conditions provided by the experimental set-up we were consistently able to form a vortex at the fountain's front. This enabled new insights into two features of the initial rise of turbulent fountains. Firstly, for 1. 0 ≈ Fr 0 ≈ 1. 7 the initial rise height is less than the steady rise height. Secondly, for Fr 0 ≈ 5. 5, the vortex formed at the fountain's front pinches off, separates from the main body and rises high above the fountain; there is thus a third rise height to consider, namely, the maximum vortex rise height, z v. From our observations we propose classifying turbulent axisymmetric fountains into five regimes (as opposed to the current three regimes) and present detailed descriptions of the flow in each. Finally, based on an analysis of the rise height fluctuations and the width of fountains in (quasi-) steady state we provide further insight into the physical cause of height fluctuations. © 2011 Cambridge University Press.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

The magnitude and frequency of vertical fluctuations of the top of an axisymmetric miscible Boussinesq fountain forms the focus of this work. We present measurements of these quantities for saline-aqueous fountains in uniform quiescent surroundings. Our results span source Froude numbers 0.3 ≤ Fr 0 ≤ 40 and, thereby, encompass very weak, weak, intermediate and forced classes of fountain. We identify distinct scalings, based on known quantities at the fountain source, for the frequency of fountain height fluctuations which collapse our data within bands of Fr0. Notably, our scalings reveal that the (dimensionless) frequency takes a constant value within each band. These results highlight characteristic time scales for the fluctuations which we decompose into a single, physically apparent, length scale and velocity scale within each band. Moreover, within one particular band, spanning source Froude numbers towards the lower end of the full range considered, we identify unexpectedly long-period fluctuations indicating a near balance of inertia and (opposing) buoyancy at the source. Our analysis identifies four distinct classes of fluctuation behaviour (four bands of Fr 0) and this classification matches well with existing classifications of fountains based on rise heights. As such, we show that an analysis of the behaviour of the fountain top alone, rather than the entire fountain, provides an alternative approach to classifying fountains. The similarity of classifications based on the two different methods confirms that the boundaries between classes mark tangible changes in the physics of fountains. For high Fr0 we show that the dominant fluctuations occur at the scale of the largest eddies which can be contained within the fountain near its top. Extending this, we develop a Strouhal number, Strtop, based on experimental measures of the fountain top, defined such that Strtop = 1 would suggest the dominant fluctuations are caused by a continual cycle of eddies forming and collapsing at this largest physical scale. For high- Fr 0 fountains we find Strtop ≈ 0. 9. © 2013 Cambridge University Press.

Relevância:

20.00% 20.00%

Publicador:

Resumo:

The behavior of the drain voltage rise of the Lateral IGBT during inductive turn-off is studied in detail. Numerical simulations show that, if compared with the well known vertical IGBT, the Lateral IGBT presents a differences in the on-state stored charge and in the growth of the depleted region that result in a different drain voltage rise. In this paper a complete model for the voltage rise is devised through an accurate calculation of the equivalent output capacitance. The model is in excellent agreement with two-dimensional simulations. Further, the paper shows that previously proposed models, which targeted the vertical IGBT, are not adequate for the description of the turn-off voltage rise in the Lateral IGBT. © Springer Science + Business Media LLC 2006.