7 resultados para BRANCHED POLYETHYLENES

em Cambridge University Engineering Department Publications Database


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In this paper, we present the analysis of electroosmotic flow in a branched -turn nanofluidic device, which we developed for detection and sorting of single molecules. The device, where the channel depth is only 150 nm, is designed to optically detect fluorescence from a volume as small as 270 attolitres (al) with a common wide-field fluorescent setup. We use distilled water as the liquid, in which we dilute 110 nm fluorescent beads employed as tracer-particles. Quantitative imaging is used to characterize the pathlines and velocity distribution of the electroosmotic flow in the device. Due to the device's complex geometry, the electroosmotic flow cannot be solved analytically. Therefore we use numerical flow simulation to model our device. Our results show that the deviation between measured and simulated data can be explained by the measured Brownian motion of the tracer-particles, which was not incorporated in the simulation.

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Many insects with smooth adhesive pads can rapidly enlarge their contact area by centripetal pulls on the legs, allowing them to cope with sudden mechanical perturbations such as gusts of wind or raindrops. The short time scale of this reaction excludes any neuromuscular control; it is thus more likely to be caused by mechanical properties of the pad's specialized cuticle. This soft cuticle contains numerous branched fibrils oriented almost perpendicularly to the surface. Assuming a fixed volume of the water-filled cuticle, we hypothesized that pulls could decrease the fibril angle, thereby helping the contact area to expand laterally and longitudinally. Three-dimensional fluorescence microscopy on the cuticle of smooth stick insect pads confirmed that pulls significantly reduced the fibril angle. However, the fibril angle variation appeared insufficient to explain the observed increase in contact area. Direct strain measurements in the contact zone demonstrated that pulls not only expand the cuticle laterally, but also add new contact area at the pad's outer edge.

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Fibrous collagenous networks are not only stiff but also tough, due to their complex microstructures. This stiff yet tough behavior is desirable for both medical and military applications but it is difficult to reproduce in engineering materials. While the nonlinear hyperelastic behavior of fibrous networks has been extensively studied, the understanding of toughness is still incomplete. Here, we identify a microstructure mimicking the branched bundles of a natural type I collagen network, in which partially cross-linked long fibers give rise to novel combinations of stiffness and toughness. Finite element analysis shows that the stiffness of fully cross-linked fibrous networks is amplified by increasing the fibril length and cross-link density. However, a trade-off of such stiff networks is reduced toughness. By having partially cross-linked networks with long fibrils, the networks have comparable stiffness and improved toughness as compared to the fully cross-linked networks. Further, the partially cross-linked networks avoid the formation of kinks, which cause fibril rupture during deformation. As a result, the branching allows the networks to have stiff yet tough behavior.

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We present a new approach for the fabrication and integration of vertically aligned forests of amorphous carbon nanowires (CNWs), using only standard lithography, oxygen plasma treatment, and thermal processing. The simplicity and scalability of this process, as well as the hierarchical organization of CNWs, provides a potential alternative to the use of carbon nanotubes and graphene for applications in microsystems and high surface area materials. The CNWs are highly branched at the nanoscale, and novel hierarchical microstructures with CNWs connected to a solid amorphous core are made by controlling the plasma treatment time. By multilayer processing we demonstrate deterministic joining of CNW micropillars into 3D sensing networks. Finally we show that these networks can be chemically functionalized and used for measurement of DNA binding with increased sensitivity. © 2011 American Chemical Society.

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We demonstrate a method to realize vertically oriented Ge nanowires on Si(111) substrates. Ge nanowires were grown by chemical vapor deposition using Au nanoparticles to seed nanowire growth via a vapor-liquid-solid growth mechanism. Rapid oxidation of Si during Au nanoparticle application inhibits the growth of vertically oriented Ge nanowires directly on Si. The present method employs thin Ge buffer layers grown at low temperature less than 600 degrees C to circumvent the oxidation problem. By using a thin Ge buffer layer with root-mean-square roughness of approximately 2 nm, the yield of vertically oriented Ge nanowires is as high as 96.3%. This yield is comparable to that of homoepitaxial Ge nanowires. Furthermore, branched Ge nanowires could be successfully grown on these vertically oriented Ge nanowires by a secondary seeding technique. Since the buffer layers are grown under moderate conditions without any high temperature processing steps, this method has a wide process window highly suitable for Si-based microelectronics.

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Branched nanowire heterostructures of InAsGaAs were observed during Au-assisted growth of InAs on GaAs nanowires. The evolution of these branches has been determined through detailed electron microscopy characterization with the following sequence: (1) in the initial stage of InAs growth, the Au droplet is observed to slide down the side of the GaAs nanowire, (2) the downward movement of Au nanoparticle later terminates when the nanoparticle encounters InAs growing radially on the GaAs nanowire sidewalls, and (3) with further supply of In and As vapor reactants, the Au nanoparticles assist the formation of InAs branches with a well-defined orientation relationship with GaAsInAs core/shell stems. We anticipate that these observations advance the understanding of the kink formation in axial nanowire heterostructures. © 2007 American Institute of Physics.