Three dimensional distributions of arsenic and platinum within NiSi contact and gate of an n-type transistor

Atom probe tomography was used to study the redistribution of platinum and arsenic atoms after Ni(Pt) silicidation of As-doped polycrystalline Si. These measurements were performed on a field-effect transistor and compared with those obtained in unpatterned region submitted to the same process. These results suggest that Pt and As redistribution during silicide formation is only marginally influenced by the confinement in microelectronic devices. On the contrary, there is a clear difference with the redistribution reported in the literature for the blanket wafers. Selective etching used to remove the non-reacted Ni(Pt) film after the first rapid heat treatment may induce this difference. © 2011 American Institute of Physics.

Durability and photo-electric characteristics of a mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As2Se3) multi-layered thin film

A mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As2Se3) multi-layered thin film and a mixed amorphous Se-As2Se3 film is compared from a durability perspective and photo-electric perspective. The former is durable to incident laser induced degradation after numerous laser scans and does not crystallise till 105 of annealing, both of which are improved properties from the mixed evaporated film. In terms of photo-electric properties, the ratio between the photocurrent and the dark current improved whereas the increase of the dark current was higher than that of As2Se3 due to the unique current path developed within the mille-feuille structure. Implementing this structure into various amorphous semiconductors may open up a new possibility towards structure-sensitive amorphous photoconductors. © 2013 Elsevier B.V.

TRANSIENT SCANNING ELECTRON BEAM ANNEALING METHODS USED TO STUDY DIFFUSION AND DEFECTS IN IMPLANTED SILICON.

Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drain regions in CMOS, has been carried out using a scanning electron beam annealer, as part of a study of transient diffusion effects. Three types of e-beam anneal have been performed, with peak temperatures in the range 900 -1200 degree C; the normal isothermal e-beam anneals, together with sub-second fast anneals and 'dual-pulse' anneals, in which the sample undergoes an isothermal pre-anneal followed by rapid heating to the required anneal temperature is less than 0. 5s. The diffusion occuring during these anneal cycles has been modelled using SPS-1D, an implant and diffusion modelling program developed by one of the authors. This has been modified to incorporate simulated temperature vs. time cycles for the anneals. Results are presented applying the usual equilibrium clustering model, a transient point-defect enhancement to the diffusivity proposed recently by Fair and a new dynamic clustering model for arsenic. Good agreement with SIMS measurements is obtained using the dynamic clustering model, without recourse to a transient defect model.