A sustainable PWR fuel cycle with complete TRU recycling using fertile-free fuel

The feasibility of a conventional PWR fuel cycle with complete recycling of TRU elements in the same reactor is investigated. A new Combined Non-fertile and Uranium (CONFU) fuel assembly where about 20% of the uranium fuel pins are replaced with fertile free fuel (FFF) hosting TRU generated in the previous cycle is proposed. In this sustainable fuel cycle based on the CONFU fuel assembly concept, the amount and radiotoxicity of the nuclear waste can be significantly reduced in comparison with the conventional once-through UO 2 fuel cycle. It is shown that under the constraints of acceptable power peaking limits, the CONFU assembly exhibits negative reactivity feedback coefficients comparable in values to those of the reference UO2 fuel. Moreover, the effective delayed neutron fraction is about the same as for UO2-fueled cores. Therefore, feasibility of the PWR core operation and control with complete TRU recycle has been shown in principle. However, gradual build up of small amounts of Cm and Cf challenges fuel reprocessing and fabrication due to the high spontaneous fissions rates of these nuclides and heat generation by some Pu, Am, and Cm isotopes. Feasibility of the processing steps becomes more attainable if the time between discharge and reprocessing is 20 years or longer. The implications for the entire fuel cycle will have to be addressed in future studies.

Taper-free and vertically oriented Ge nanowires on Ge/Si substrates grown by a two-temperature process

Taper-free and vertically oriented Ge nanowires were grown on Si (111) substrates by chemical vapor deposition with Au nanoparticle catalysts. To achieve vertical nanowire growth on the highly lattice mismatched Si substrate, a thin Ge buffer layer was first deposited, and to achieve taper-free nanowire growth, a two-temperature process was employed. The two-temperature process consisted of a brief initial base growth step at high temperature followed by prolonged growth at lower temperature. Taper-free and defect-free Ge nanowires grew successfully even at 270 °C, which is 90 °C lower than the bulk eutectic temperature. The yield of vertical and taper-free nanowires is over 90%, comparable to that of vertical but tapered nanowires grown by the conventional one-temperature process. This method is of practical importance and can be reliably used to develop novel nanowire-based devices on relatively cheap Si substrates. Additionally, we observed that the activation energy of Ge nanowire growth by the two-temperature process is dependent on Au nanoparticle size. The low activation energy (∼5 kcal/mol) for 30 and 50 nm diameter Au nanoparticles suggests that the decomposition of gaseous species on the catalytic Au surface is a rate-limiting step. A higher activation energy (∼14 kcal/mol) was determined for 100 nm diameter Au nanoparticles which suggests that larger Au nanoparticles are partially solidified and that growth kinetics become the rate-limiting step. © 2011 American Chemical Society.

Defect-free GaAs/AlGaAs Core-shell nanowires on Si substrates

We report straight and vertically aligned defect-free GaAs nanowires grown on Si(111) substrates by metal-organic chemical vapor deposition. By deposition of thin GaAs buffer layers on Si substrates, these nanowires could be grown on the buffer layers with much less stringent conditions as otherwise imposed by epitaxy of III-V compounds on Si. Also, crystal-defect-free GaAs nanowires were grown by using either a two-temperature growth mode consisting of a short initial nucleation step under higher temperature followed by subsequent growth under lower temperature or a rapid growth rate mode with high source flow rate. These two growth modes not only eliminated planar crystallographic defects but also significantly reduced tapering. Core-shell GaAs-AlGaAs nanowires grown by the two-temperature growth mode showed improved optical properties with strong photoluminescence and long carrier life times. © 2011 American Chemical Society.

Reconfigurable free-space optical switching technologies for storage area networks

Reconfigurable shutter-based free-space optical switching technologies using fiber ribbon and multiple wavelengths per fiber for Storage Area Networks (SANs) application are presented and demonstrated. ©2009 SPIE-OSA-IEEE.

Reconfigurable free-space optical switching technologies for storage area networks

Reconfigurable shutter-based free-space optical switching technologies using fiber ribbon and multiple wavelengths per fiber for Storage Area Networks (SANs) application are presented and demonstrated. ©2009 Optical Society of America.