Estimating material elasticity by spherical indentation load-relaxation tests on viscoelastic samples of finite thickness

A two-step viscoelastic spherical indentation method is proposed to compensate for 1) material relaxation and 2) sample thickness. In the first step, the indenter is moved at a constant speed and the reaction force is measured. In the second step, the indenter is held at a constant position and the relaxation response of the material is measured. Then the relaxation response is fit with a multi-exponential function which corresponds to a three-branch general Maxwell model. The relaxation modulus is derived by correcting the finite ramp time introduced in the first step. The proposed model takes into account the sample thickness, which is important for applications in which the sample thickness is less than ten times the indenter radius. The model is validated numerically by finite element simulations. Experiments are carried out on a 10% gelatin phantom and a chicken breast sample with the proposed method. The results for both the gelatin phantom and the chicken breast sample agree with the results obtained from a surface wave method. Both the finite element simulations and experimental results show improved elasticity estimations by incorporating the sample thickness into the model. The measured shear elasticities of the 10% gelatin sample are 6.79 and 6.93 kPa by the proposed finite indentation method at sample thickness of 40 and 20 mm, respectively. The elasticity of the same sample is estimated to be 6.53 kPa by the surface wave method. For the chicken breast sample, the shear elasticity is measured to be 4.51 and 5.17 kPa by the proposed indentation method at sample thickness of 40 and 20 mm, respectively. Its elasticity is measured by the surface wave method to be 4.14 kPa. © 2011 IEEE.

Polychromatic single-shot spectroscopy on SOI-FET trapped electrons

The behavior of trapped electrons, in a dielectric close to the channel of a silicon SOI-FET, is studied by cryogenic microwave spectroscopy. On-resonance microwave excitation causes one of these trapped electrons to undergo spatial Rabi oscillations between widely separated trap sites. This charge displacement causes a change in the drain current of the transistor, resulting in high quality factor resonances in continuous wave spectroscopy. The potential of this effect for non-classical information processing is investigated through polychromatic single-shot spectroscopy, using on-resonance and difference frequencies. Interaction between different trapped electrons is seen in the post excitation behavior and the possibilities of quantum gate operations are discussed. © The Electrochemical Society.

Characterisation of ultrafast micro-structuring of alumina (Al 2O3)

Alumina ceramic, Al2O3, presents a challenge to laser micro-structuring due to its neglible linear absorption coefficient in the optical region coupled with its physical properties such as extremely high melting point and high thermal conductivity. In this work, we demonstrate clean micro-structuring of alumina using NIR (λ=775 nm) ultrafast optical pulses with 180 fs duration at 1kHz repetition rate. Sub-picosecond pulses can minimise thermal effects along with collateral damage when processing conditions are optimised, consequently, observed edge quality is excellent in this regime. We present results of changing micro-structure and morphology during ultrafast processing along with measured ablation rates and characteristics of developing surface relief. Initial crystalline phase (alpha Al2O3) is unaltered by femtosecond processing. Multi-pulse ablation threshold fluence Fth, ∼ 1.1 Jcm-2 and at low fluence ∼ 3 Jcm -2, independent of machined depth, there appears to remain a ∼ 2 μm thick rapidly re-melted layer. On the other hand, micro-structuring at high fluence F ∼ 21 Jcm-2 shows no evidence of melting and the machined surface is covered with a fine layer of debris, loosely attached. The nature of debris produced by femtosecond ablation has been investigated and consists mainly of alumina nanoparticles with diameters from 20 nm to 1 micron with average diameter ∼ 300 nm. Electron diffraction shows these particles to be essentially single crystal in nature. By developing a holographic technique, we have demonstrated periodic micrometer level structuring on polished samples of this extremely hard material.

On the use of a decimative spectral estimation method based on eigenanalysis and SVD for formant and bandwidth tracking of speech signals

In this paper, a Decimative Spectral estimation method based on Eigenanalysis and SVD (Singular Value Decomposition) is presented and applied to speech signals in order to estimate Formant/Bandwidth values. The underlying model decomposes a signal into complex damped sinusoids. The algorithm is applied not only on speech samples but on a small amount of the autocorrelation coefficients of a speech frame as well, for finer estimation. Correct estimation of Formant/Bandwidth values depend on the model order thus, the requested number of poles. Overall, experimentation results indicate that the proposed methodology successfully estimates formant trajectories and their respective bandwidths.

Light absorption and electrical transport in Si:O alloys for photovoltaics

Thin films (100-500 nm) of the Si:O alloy have been systematically characterized in the optical absorption and electrical transport behavior, by varying the Si content from 43 up to 100 at. %. Magnetron sputtering or plasma enhanced chemical vapor deposition have been used for the Si:O alloy deposition, followed by annealing up to 1250 °C. Boron implantation (30 keV, 3-30× 1014 B/cm2) on selected samples was performed to vary the electrical sheet resistance measured by the four-point collinear probe method. Transmittance and reflectance spectra have been extracted and combined to estimate the absorption spectra and the optical band gap, by means of the Tauc analysis. Raman spectroscopy was also employed to follow the amorphous-crystalline (a-c) transition of the Si domains contained in the Si:O films. The optical absorption and the electrical transport of Si:O films can be continuously and independently modulated by acting on different parameters. The light absorption increases (by one decade) with the Si content in the 43-100 at. % range, determining an optical band gap which can be continuously modulated into the 2.6-1.6 eV range, respectively. The a-c phase transition in Si:O films, causing a significant reduction in the absorption coefficient, occurs at increasing temperatures (from 600 to 1100 °C) as the Si content decreases. The electrical resistivity of Si:O films can be varied among five decades, being essentially dominated by the number of Si grains and by the doping. Si:O alloys with Si content in the 60-90 at. % range (named oxygen rich silicon films), are proved to join an appealing optical gap with a viable conductivity, being a good candidate for increasing the conversion efficiency of thin-film photovoltaic cell. © 2010 American Institute of Physics.

Measurement of filling-factor-dependent magnetophonon resonances in graphene using Raman spectroscopy

We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45 T. This reveals a filling-factor-dependent, multicomponent anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E2g phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudomagnetic fields lead to increased scattering intensity inside the anticrossing gap, consistent with the experiments. © 2013 American Physical Society.

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

The efficiency of the injection and recombination processes in InGaN/GaN LEDs is governed by the properties of the active region of the devices, which strongly depend on the conditions used for the growth of the epitaxial material. To improve device quality, it is very important to understand how the high temperatures used during the growth process can modify the quality of the epitaxial material. With this paper we present a study of the modifications in the properties of InGaN/GaN LED structures induced by high temperature annealing: thermal stress tests were carried out at 900 °C, in nitrogen atmosphere, on selected samples. The efficiency and the recombination dynamics were evaluated by photoluminescence measurements (both integrated and time-resolved), while the properties of the epitaxial material were studied by Secondary Ion Mass Spectroscopy (SIMS) and Rutherford Backscattering (RBS) channeling measurements. Results indicate that exposure to high temperatures may lead to: (i) a significant increase in the photoluminescence efficiency of the devices; (ii) a decrease in the parasitic emission bands located between 380 nm and 400 nm; (iii) an increase in carrier lifetime, as detected by time-resolved photoluminescence measurements. The increase in device efficiency is tentatively ascribed to an improvement in the crystallographic quality of the samples. © 2013 SPIE.

Evaluation and modeling of lanthanum diffusion in TiN/La 2O 3/HfSiON/SiO 2/Si high-k stacks

In this study, TiN/La 2O 3/HfSiON/SiO 2/Si gate stacks with thick high-k (HK) and thick pedestal oxide were used. Samples were annealed at different temperatures and times in order to characterize in detail the interaction mechanisms between La and the gate stack layers. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) measurements performed on these samples show a time diffusion saturation of La in the high-k insulator, indicating an La front immobilization due to LaSiO formation at the high-k/interfacial layer. Based on the SIMS data, a technology computer aided design (TCAD) diffusion model including La time diffusion saturation effect was developed. © 2012 American Institute of Physics.

Study of thermal effects in bulk RE-BCO superconductors submitted to a variable magnetic field

When bulk RE-BCO superconductors are used as permanent magnets in engineering applications, they are likely to experience transient variations of the applied magnetic field. The resulting vortex motion may cause a significant temperature increase. As a consequence the initial trapped flux is reduced. In the present work, we first focus on the cause of a temperature increase. The temperature distribution within a superconducting finite cylinder subjected to an alternating magnetic field is theoretically predicted. Results are compared to experimental data obtained by two temperature sensors attached to a bulk YBCO pellet. Second, we consider curative methods for reducing the effect of heat flux on the temperature increase. Hall-probe mappings on YBCO samples maintained out of the thermal equilibrium are performed for two different morphologies : a plain single domain and a single domain with a regularly spaced hole array. The drilled single-domain displays a trapped induction which is weakly affected by the local heating while displaying a high trapped field. © 2006 IOP Publishing Ltd.

Bioelectronics meets nanomedicine for cardiovascular implants: PEDOT-based nanocoatings for tissue regeneration.

BACKGROUND: An exciting direction in nanomedicine would be to analyze how living cells respond to conducting polymers. Their application for tissue regeneration may advance the performance of drug eluting stents by addressing the delayed stent re-endothelialization and late stent thrombosis. METHODS: The suitability of poly (3, 4-ethylenedioxythiophene) (PEDOT) thin films for stents to promote cell adhesion and proliferation is tested in correlation with doping and physicochemical properties. PEDOT doped either with poly (styrenesulfonate) (PSS) or tosylate anion (TOS) was used for films' fabrication by spin coating and vapor phase polymerization respectively. PEGylation of PEDOT: TOS for reduced immunogenicity and biofunctionalization of PEDOT: PSS with RGD peptides for induced cell proliferation was further applied. Atomic Force Microscopy and Spectroscopic Ellipsometry were implemented for nanotopographical, structural, optical and conductivity measurements in parallel with wettability and protein adsorption studies. Direct and extract testing of cell viability and proliferation of L929 fibroblasts on PEDOT samples by MTT assay in line with SEM studies follow. RESULTS: All PEDOT thin films are cytocompatible and promote human serum albumin adsorption. PEDOT:TOS films were found superior regarding cell adhesion as compared to controls. Their nanotopography and hydrophilicity are significant factors that influence cytocompatibility. PEGylation of PEDOT:TOS increases their conductivity and hydrophilicity with similar results on cell viability with bare PEDOT:TOS. The biofunctionalized PEDOT:PSS thin films show enhanced cell proliferation. CONCLUSIONS: The application of PEDOT polymers has evolved as a new perspective to advance stents. GENERAL SIGNIFICANCE: In this work, nanomedicine involving nanotools and novel nanomaterials merges with bioelectronics to stimulate tissue regeneration for cardiovascular implants. This article is part of a Special Issue entitled Organic Bioelectronics - Novel Applications in Biomedicine.

FM mode-locking in monolithic semiconductor lasers

FM mode-locking in monolithic semiconductor lasers is investigated for the first time, using a travelling-wave laser model. The effects of phase modulation depth and non-zero alpha factor on pulse quality and pulse-width are discussed. © 2004 Optical Society of America.

FM mode-locking in monolithic semiconductor lasers

FM mode-locking in monolithic semiconductor lasers is investigated for the first time, using a travelling-wave laser model. The effects of phase modulation depth and non-zero alpha factor on pulse quality and pulse-width are discussed. © 2004 Optical Society of America.