Adaptive agent-based manufacturing control and its application to flow shop routing control

The manufacturing industry is currently facing unprecedented challenges from changes and disturbances. The sources of these changes and disturbances are of different scope and magnitude. They can be of a commercial nature, or linked to fast product development and design, or purely operational (e.g. rush order, machine breakdown, material shortage etc.). In order to meet these requirements it is increasingly important that a production operation be flexible and is able to adapt to new and more suitable ways of operating. This paper focuses on a new strategy for enabling manufacturing control systems to adapt to changing conditions both in terms of product variation and production system upgrades. The approach proposed is based on two key concepts: (1) An autonomous and distributed approach to manufacturing control based on multi-agent methods in which so called operational agents represent the key physical and logical elements in the production environment to be controlled - for example, products and machines and the control strategies that drive them and (2) An adaptation mechanism based around the evolutionary concept of replicator dynamics which updates the behaviour of newly formed operational agents based on historical performance records in order to be better suited to the production environment. An application of this approach for route selection of similar products in manufacturing flow shops is developed and is illustrated in this paper using an example based on the control of an automobile paint shop.

Fast and compact simulation models for a variety of FET nano devices by the CMOS EKV equations

In this paper we explore the possibility of using the equations of a well known compact model for CMOS transistors as a parameterized compact model for a variety of FET based nano-technology devices. This can turn out to be a practical preliminary solution for system level architectural researchers, who could simulate behaviourally large scale systems, while more physically based models become available for each new device. We have used a four parameter version of the EKV model equations and verified that fitting errors are similar to those when using them for standard CMOS FET transistors. The model has been used for fitting measured data from three types of FET nano-technology devices obeying different physics, for different fabrication steps, and under different programming conditions. © 2009 IEEE NANO Organizers.