203 resultados para Active regions
em Cambridge University Engineering Department Publications Database
Resumo:
One of the major concerns for engineers in seismically active regions is the prevention of damage caused by earthquake-induced soil liquefaction. Vertical drains can aid dissipation of excess pore pressures both during and after earthquakes. Drain systems are designed using standard design charts based around the concept of a unit cell, assuming each drain is surrounded by more drains. It is unclear how predictable drain performance is outside that unit cell concept, for example, drains at the edge of a group. Centrifuge testing is a logical method of performing controlled experiments to establish the efficacy of vertical drains. Centrifuge testing is used to identify the effect of drains dealing with very different catchment areas. The importance of this is further highlighted by the results of a test where the same drains have been modified so that each should behave as a unit cell. It is shown that drains with large catchment areas perform more poorly than unit cells, and also have a knock-on detrimental effect on other drains. Copyright © 2011, IGI Global.
Resumo:
This paper reviews recent advances in superradiant (SR) emission in semiconductors at room temperature, a process which has been shown to enable the generation on demand of high power picosecond or subpicosecond pulses across a range of different wavelengths. The different characteristic features of SR emission from semiconductor devices with bulk, quantum-well, and quantum-dot active regions are outlined, and particular emphasis is placed on comparing the characteristic features of SR with those of lasing. Finally, potential applications of SR pulses are discussed. © 1995-2012 IEEE.
Resumo:
Nanocomposite thin film transistors (TFTs) based on nonpercolating networks of single-walled carbon nanotubes (CNTs) and polythiophene semiconductor [poly [5, 5′ -bis(3-dodecyl-2-thienyl)- 2, 2′ -bithiophene] (PQT-12)] thin film hosts are demonstrated by ink-jet printing. A systematic study on the effect of CNT loading on the transistor performance and channel morphology is conducted. With an appropriate loading of CNTs into the active channel, ink-jet printed composite transistors show an effective hole mobility of 0.23 cm 2 V-1 s-1, which is an enhancement of more than a factor of 7 over ink-jet printed pristine PQT-12 TFTs. In addition, these devices display reasonable on/off current ratio of 105-10 6, low off currents of the order of 10 pA, and a sharp subthreshold slope (<0.8 V dec-1). The work presented here furthers our understanding of the interaction between polythiophene polymers and nonpercolating CNTs, where the CNT density in the bilayer structure substantially influences the morphology and transistor performance of polythiophene. Therefore, optimized loading of ink-jet printed CNTs is crucial to achieve device performance enhancement. High performance ink-jet printed nanocomposite TFTs can present a promising alternative to organic TFTs in printed electronic applications, including displays, sensors, radio-frequency identification (RFID) tags, and disposable electronics. © 2009 American Institute of Physics.
Resumo:
We have designed and fabricated a broadband and compact polarisation selector using a photonic crystal at the junction of two intersecting active waveguides. The crystal shows >8dB polarisation selectivity over a 70nm range. © 2003 Optical Society of America.