12 resultados para Acer mono Maxim

em Cambridge University Engineering Department Publications Database


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Molybdenum disulpide, a novel two-dimensional semiconductor, was studied using optical-pump terahertz-probe spectroscopy. Mono and trilayer samples grown by chemical vapour deposition were compared to reveal their dynamic electrical response. © 2013 IEEE.

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In this paper, we review our recent experimental work on coherent and blue phase liquid crystal lasers.We will present results on thin-film photonic band edge lasing devices using dye-doped low molar mass liquid crystals in self-organised chiral nematic and blue phases. We show that high Q-factor lasers can be achieved in these materials and demonstrate that a single mode output with a very narrow line width can be readily achievable in well-aligned mono-domain samples. Further, we have found that the performance of the laser, i.e. the slope efficiency and the excitation threshold, are dependent upon the physical parameters of the low molar mass chiral nematic liquid crystals. Specifically, slope efficiencies greater than 60% could be achieved depending upon the materials used and the device geometry employed. We will discuss the important parameters of the liquid crystal host/dye guest materials and device configuration that are needed to achieve such high slope efficiencies. Further we demonstrate how the wavelength of the laser can be tuned using an in-plane electric field in a direction perpendicular to the helix axis via a flexoelectric mechanism as well as thermally using thermochromic effects. We will then briefly outline data on room temperature blue phase lasers and further show how liquid crystal/lenslet arrays have been used to demonstrate 2D laser emission of any desired wavelength. Finally, we present preliminary data on LED/incoherent pumping of RG liquid crystal lasers leading to a continuous wave output. © 2009 SPIE.

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In this paper, we review our recent experimental work on coherent and blue phase liquid crystal lasers.We will present results on thin-film photonic band edge lasing devices using dye-doped low molar mass liquid crystals in self-organised chiral nematic and blue phases. We show that high Q-factor lasers can be achieved in these materials and demonstrate that a single mode output with a very narrow line width can be readily achievable in well-aligned mono-domain samples. Further, we have found that the performance of the laser, i.e. the slope efficiency and the excitation threshold, are dependent upon the physical parameters of the low molar mass chiral nematic liquid crystals. Specifically, slope efficiencies greater than 60% could be achieved depending upon the materials used and the device geometry employed. We will discuss the important parameters of the liquid crystal host/dye guest materials and device configuration that are needed to achieve such high slope efficiencies. Further we demonstrate how the wavelength of the laser can be tuned using an in-plane electric field in a direction perpendicular to the helix axis via a flexoelectric mechanism as well as thermally using thermochromic effects. We will then briefly outline data on room temperature blue phase lasers and further show how liquid crystal/lenslet arrays have been used to demonstrate 2D laser emission of any desired wavelength. Finally, we present preliminary data on LED/incoherent pumping of RG liquid crystal lasers leading to a continuous wave output. © 2009 SPIE.

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The jetting of dilute polymer solutions in drop-on-demand printing is investigated. A quantitative model is presented which predicts three different regimes of behaviour depending upon the jet Weissenberg number Wi and extensibility of the polymer molecules. In regime I (Wi < ½) the polymer chains are relaxed and the fluid behaves in a Newtonian manner. In regime II (½ < Wi < L) where L is the extensibility of the polymer chain the fluid is viscoelastic, but the polymer do not reach their extensibility limit. In regime III (Wi > L) the chains remain fully extended in the thinning ligament. The maximum polymer concentration at which a jet of a certain speed can be formed scales with molecular weight to the power of (1-3ν), (1-6ν) and -2ν in the three regimes respectively, where ν is the solvent quality coefficient. Experimental data obtained with solutions of mono-disperse polystyrene in diethyl phthalate with molecular weights between 24 - 488 kDa, previous numerical simulations of this system, and previously published data for this and another linear polymer in a variety of “good” solvents, all show good agreement with the scaling predictions of the model.

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Three regimes of fast DoD jetting behaviour for solutions of mono-disperse linear polymers have been linked to the underlying polymer molecular chains and their fully extended length L in good solvents. This allows scaling laws in molecular weight to be predicted and applied to experimental jetting results from different DoD print heads. The higher extensional flows encountered in high speed jetting in viscous solvents can fully stretch linear molecules outside the nozzle, permitting jetting of higher polymer content than for purely elastic behaviour. These results are significant for DoD printing at raised jet speeds and will apply to any DoD print head jetting linear polymer solutions.

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A study on the nanosecond fiber laser interaction with silicon was performed experimentally for the generation of percussion drilled holes. Single pulse ablation experiments were carried out on mono crystalline 650μm thick Si wafers. Changes of the mass removal mechanism were investigated by varying laser fluence up to 68 J/cm2 and pulse duration from 50 ns to 200 ns. Hole width and depth were measured and surface morphology were studied using scanning electron microscopy (SEM) and optical interferometric profilometry (Veeco NT3300). High speed photography was also used to examine laser generated plasma expansion rates. The material removal rate was found to be influenced by the pulse energy, full pulse duration and pulse peak power. Single pulse ablation depth of 4.42 μm was achieved using a 200 ns pulse of 13.3 J/cm 2, giving a maximum machining efficiency of 31.86 μm per mJ. Holes drilled with an increased fluence but fixed pulse length were deeper, exhibited low recast, but were less efficient than those produced at a lower fluence. The increased peak power in this case led to high levels of plasma and vapour production. The expansion of which, results in a strong driving recoil force, an increase in the rate and volume of melt ejection, and cleaner hole formation. The experimental findings show that for efficient drilling at a given energy, a longer, lower peak power pulse is more desirable than a high peak power short pulse.

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Ammonia (NH 3) plasma pretreatment is used to form and temporarily reduce the mobility of Ni, Co, or Fe nanoparticles on boron-doped mono- and poly-crystalline silicon. X-ray photoemission spectroscopy proves that NH 3 plasma nitrides the Si supports during nanoparticle formation which prevents excessive nanoparticle sintering/diffusion into the bulk of Si during carbon nanotube growth by chemical vapour deposition. The nitridation of Si thus leads to nanotube vertical alignment and the growth of nanotube forests by root growth mechanism. © 2012 American Institute of Physics.

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Differential growth of thin elastic bodies furnishes a surprisingly simple explanation of the complex and intriguing shapes of many biological systems, such as plant leaves and organs. Similarly, inelastic strains induced by thermal effects or active materials in layered plates are extensively used to control the curvature of thin engineering structures. Such behaviour inspires us to distinguish and to compare two possible modes of differential growth not normally compared to each other, in order to reveal the full range of out-of-plane shapes of an initially flat disk. The first growth mode, frequently employed by engineers, is characterised by direct bending strains through the thickness, and the second mode, mainly apparent in biological systems, is driven by extensional strains of the middle surface. When each mode is considered separately, it is shown that buckling is common to both modes, leading to bistable shapes: growth from bending strains results in a double-curvature limit at buckling, followed by almost developable deformation in which the Gaussian curvature at buckling is conserved; during extensional growth, out-of-plane distortions occur only when the buckling condition is reached, and the Gaussian curvature continues to increase. When both growth modes are present, it is shown that, generally, larger displacements are obtained under in-plane growth when the disk is relatively thick and growth strains are small, and vice versa. It is also shown that shapes can be mono-, bi-, tri- or neutrally stable, depending on the growth strain levels and the material properties: furthermore, it is shown that certain combinations of growth modes result in a free, or natural, response in which the doubly curved shape of disk exactly matches the imposed strains. Such diverse behaviour, in general, may help to realise more effective actuation schemes for engineering structures. © 2012 Elsevier Ltd. All rights reserved.

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Ni silicides used as contacts in source/drain and gate of advanced CMOS devices were analyzed by atom probe tomography (APT) at atomic scale. These measurements were performed on 45 nm nMOS after standard self-aligned silicide (salicide) process using Ni(5 at.% Pt) alloy. After the first annealing (RTA1), δ-Ni2Si was the only phase formed on gate and source/drain while, after the second annealing (RTA2), two different Ni silicides have been formed: NiSi on the gate and δ-Ni2Si on the source and drain. This difference between source/drain and gate regions in nMOS devices has been related to the Si substrate nature (poly or mono-crystalline) and to the size of the contact. In fact, NiSi seems to have difficulties to nucleate in the narrow source/drain contact on mono-crystalline Si. The results have been compared to analysis performed on 28 nm nMOS where the Pt concentration is higher (10 at.% Pt). In this case, θ-Ni2Si is the first phase to form after RTA1 and NiSi is then formed at the same time on source (or drain) and gate after RTA2. The absence of the formation of NiSi from δ-Ni 2Si/Si(1 0 0) interface compared to θ-Ni2Si/Si(1 0 0) interface could be related to the difference of the interface energies. The redistributions of As and Pt in different silicides and interfaces were measured and discussed. In particular, it has been evidenced that Pt redistributions obtained on both 45 and 28 nm MOS transistors correspond to respective Pt distributions measured on blanket wafers. © 2013 Elsevier B.V. All rights reserved.

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Recent results in spinal research are challenging the historical view that the spinal reflexes are mostly hardwired and fixed behaviours. In previous work we have shown that three of the simplest spinal reflexes could be self-organised in an agonist-antagonist pair of muscles. The simplicity of these reflexes is given from the fact that they entail at most one interneuron mediating the connectivity between afferent inputs and efferent outputs. These reflexes are: the Myotatic, the Reciprocal Inibition and the Reverse Myotatic reflexes. In this paper we apply our framework to a simulated 2D leg model actuated by six muscles (mono- and bi-articular). Our results show that the framework is successful in learning most of the spinal reflex circuitry as well as the corresponding behaviour in the more complicated muscle arrangement. © 2012 Springer-Verlag.