Effects of Boundary Layer Ingestion on the Aero-Acoustics of Transonic Fan Rotors

The use of boundary-layer-ingesting, embedded propulsion systems can result in inlet flow distortions where the interaction of the boundary layer vorticity and the inlet lip causes horseshoe vortex formation and the ingestion of streamwise vortices into the inlet. A previously-developed body-force-based fan modeling approach was used to assess the change in fan rotor shock noise generation and propagation in a boundary-layer-ingesting, serpentine inlet. This approach is employed here in a parametric study to assess the effects of inlet geometry parameters (offset-to-diameter ratio and downstream-to-upstream area ratio) on flow distortion and rotor shock noise. Mechanisms related to the vortical inlet structures were found to govern changes in the rotor shock noise generation and propagation. The vortex whose circulation is in the opposite direction to the fan rotation (counter-swirling vortex) increases incidence angles on the fan blades near the tip, enhancing noise generation. The vortex with circulation in the direction of fan rotation (co-swirling vortex) creates a region of subsonic relative flow near the blade tip radius which decreases the sound power propagated to the far-field. The parametric study revealed that the overall sound power level at the fan leading edge is set by the ingested streamwise circulation, and that for inlet designs in which the streamwise vortices are displaced away from the duct wall, the sound power at the upstream inlet plane increased by as much as 9 dB. By comparing the far-field noise results obtained to those for a conventional inlet, it is deduced that the changes in rotor shock noise are predominantly due to the ingestion of streamwise vorticity.

Effects of Boundary Layer Ingestion on the Aero-Acoustics of Transonic Fan Rotors

The use of boundary-layer-ingesting, embedded propulsion systems can result in inlet flow distortions where the interaction of the boundary layer vorticity and the inlet lip causes horseshoe vortex formation and the ingestion of streamwise vortices into the inlet. A previously-developed body-force-based fan modeling approach was used to assess the change in fan rotor shock noise generation and propagation in a boundary-layer-ingesting, serpentine inlet. This approach is employed here in a parametric study to assess the effects of inlet geometry parameters (offset-to-diameter ratio and downstream-to-upstream area ratio) on flow distortion and rotor shock noise. Mechanisms related to the vortical inlet structures were found to govern changes in the rotor shock noise generation and propagation. The vortex whose circulation is in the opposite direction to the fan rotation (counter-swirling vortex) increases incidence angles on the fan blades near the tip, enhancing noise generation. The vortex with circulation in the direction of fan rotation (co-swirling vortex) creates a region of subsonic relative flow near the blade tip radius which decreases the sound power propagated to the far-field. The parametric study revealed that the overall sound power level at the fan leading edge is set by the ingested streamwise circulation, and that for inlet designs in which the streamwise vortices are displaced away from the duct wall, the sound power at the upstream inlet plane increased by as much as 9 dB. By comparing the far-field noise results obtained to those for a conventional inlet, it is deduced that the changes in rotor shock noise are predominantly due to the ingestion of streamwise vorticity.

Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications

This work describes the deposition, annealing and characterisation of semi-insulating oxygen-doped silicon films at temperatures compatible with polysilicon circuitry on glass. The semi-insulating layers are deposited by the plasma enhanced chemical vapour deposition technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures at a temperature of 350 °C. The as-deposited films are then furnace annealed at 600 °C which is the maximum process temperature. Raman analysis shows the as-deposited and annealed films to be completely amorphous. The most important deposition variable is the N2O SiH4 gas ratio. By varying the N2O SiH4 ratio the conductivity of the annealed films can be accurately controlled, for the first time, down to a minimum of ≈10-7Ω-1cm-1 where they exhibit a T -1 4 temperature dependence indicative of a hopping conduction mechanism. Helium dilution of the reactant gases is shown to improve both film uniformity and reproducibility. A model for the microstructure of these semi-insulating amorphous oxygen-doped silicon films is proposed to explain the observed physical and electrical properties. © 1995.

Low temperature (≤ 600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large area power applications

This work describes the annealing and characterisation of semi-insulating oxygen-doped silicon films deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The maximum process temperature is chosen to be compatible with large area polycrystalline silicon (poly-Si) circuitry on glass. The most important deposition variable is shown to be the N2O SiH4 gas ratio. Helium dilution results in improved film uniformity and reproducibility. Raman analysis shows the 'as-deposited' and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties. © 1995.

Steady-state analytical model for the trench insulated gate bipolar transistor

A steady-state, physically-based analytical model for the Trench Insulated Gate Bipolar Transistor which accounts for a combined PIN diode - PNP transistor carrier dynamics is proposed. Previous models (i.e. PIN model and PNP transistor model) cannot account properly for the carrier dynamics in Trench IGBT since neither the PNP transistor nor the PIN diode effect can be neglected. An optimized Trench IGBT with a large ratio between the accumulation layer and the cell size leads to substantially improved on-state characteristics, which makes the Trench IGBT potentially the most attractive device in the area of high voltage fast switching devices.

The effect of floor heat source area on the induced airflow in a room

We examine the role of heat source geometry in determining rates of airflow and thermal stratification in natural displacement ventilation flows. We modify existing models to account for heat sources of finite (non-zero) area, such as formed by a sun patch warming the floor of a room. Our model allows for predictions of the steady stratification and ventilation flow rates that develop in a room due to a circular heat source at floor level. We compare our theoretical predictions with predictions for the limiting cases of a point source of heat (yielding a stratified interior), and a uniformly heated floor (yielding a mixed interior). Our theory shows a smooth transition between these two limits, which themselves result in extremes of ventilation, as the ratio of the heat source radius to the room height increases. Our model for the transition from displacement to mixing ventilation is compared to previous work and demonstrates that the transition can occur for smaller sources than previously thought, particularly for rooms with large floor area compared to ceiling height. © 2009 Elsevier Ltd.