Fibre optic installation techniques for pile instrumentation

An innovative technique based on optical fibre sensing that allows continuous strain measurement has recently been introduced in structural health monitoring. Known as Brillouin Optical Time-Domain Reflectometry (BOTDR), this distributed optical fibre sensing technique allows measurement of strain along the full length (up to 10km) of a suitably installed optical fibre. Examples of recent implementations of BOTDR fibre optic sensing in piles are described in this paper. Two examples of distributed optical fibre sensing in piles are demonstrated using different installation techniques. In a load bearing pile, optical cables were attached along the reinforcing bars by equally spaced spot gluing to measure the axial response of pile to ground excavation induced heave and construction loading. Measurement of flexural behaviour of piles is demonstrated in the instrumentation of a secant piled wall where optical fibres were embedded in the concrete by simple endpoint clamping. Both methods have been verified via laboratory works. © 2009 IOS Press.

Carbon nanotube growth for through silicon via application.

Through silicon via (TSV) technology is key for next generation three-dimensional integrated circuits, and carbon nanotubes (CNT) provide a promising alternative to metal for filling the TSV. Three catalyst preparation methods for achieving CNT growth from the bottom of the TSV are investigated. Compared with sputtering and evaporation, catalyst deposition using dip-coating in a FeCl2 solution is found to be a more efficient method for realizing a bottom-up filling of the TSV (aspect ratio 5 or 10) with CNT. The CNT bundles grown in 5 min exceed the 50 μm length of the TSV and are multi-wall CNT with three to eight walls. The CNT bundles inside the TSV were electrically characterized by creating a direct contact using a four-point nanoprober setup. A low resistance of the CNT bundle of 69.7 Ω (297 Ω) was measured when the CNT bundle was contacted midway along (over the full length of) the 25 μm deep TSV. The electrical characterization in combination with the good filling of the TSV demonstrates the potential use of CNT in fully integrated TSV applications.