Comment on "Acoustic chaos in a duct with two separate sound sources" [J. Acoust. Soc. Am. 110, 120-126 (2001)] (L)

In a paper published in this journal in 2001 by Dong [W. G. Dong, X. Y. Huang, and Q. L. Wo, J. Acoust. Soc. Am. 110, 120-126 (2001)] it was claimed that acoustic chaos was obtained experimentally by the nonlinear interaction of two acoustic waves in a duct. In this comment a simple experimental setup and an analytical model is used to show that the dynamics of such systems corresponds to a quasiperiodic motion, and not to a chaotic one. © 2008 Acoustical Society of America.

Vertically standing Ge nanowires on GaAs(110) substrates.

The growth of epitaxial Ge nanowires is investigated on (100), (111) B and (110) GaAs substrates in the growth temperature range from 300 to 380 °C. Unlike epitaxial Ge nanowires on Ge or Si substrates, Ge nanowires on GaAs substrates grow predominantly along the [Formula: see text] direction. Using this unique property, vertical [Formula: see text] Ge nanowires epitaxially grown on GaAs(110) surface are realized. In addition, these Ge nanowires exhibit minimal tapering and uniform diameters, regardless of growth temperatures, which is an advantageous property for device applications. Ge nanowires growing along the [Formula: see text] directions are particularly attractive candidates for forming nanobridge devices on conventional (100) surfaces.