A trapped field of 17.6 T in melt-processed, bulk Gd-Ba-Cu-O reinforced with shrink-fit steel

The ability of large-grain (RE)Ba2Cu3O7-δ ((RE)BCO; RE = rare earth) bulk superconductors to trap magnetic fields is determined by their critical current. With high trapped fields, however, bulk samples are subject to a relatively large Lorentz force, and their performance is limited primarily by their tensile strength. Consequently, sample reinforcement is the key to performance improvement in these technologically important materials. In this work, we report a trapped field of 17.6 T, the largest reported to date, in a stack of two silver-doped GdBCO superconducting bulk samples, each 25 mm in diameter, fabricated by top-seeded melt growth and reinforced with shrink-fit stainless steel. This sample preparation technique has the advantage of being relatively straightforward and inexpensive to implement, and offers the prospect of easy access to portable, high magnetic fields without any requirement for a sustaining current source. © 2014 IOP Publishing Ltd.

Large single grain (RE)-Ba-Cu-O superconductors with nano-phase inclusions

Nano-phase (5-20 nm) particles of YBa2(Cu0.5M 0.6)O6 [where M = Nb, Ta, Mo, W, Zr and Hf] have been introduced successfully into RE-Ba-Cu-O single grain superconductors. A study to enlarge the size of a single grain containing these particles has been carried out involving measurement of the growth rate as a function of YBa 2(Cu0.5M0.6)O6 phase concentration and degree of un-dercooling. The influence of the change in YBa2 (Cu0.8M0.5)O6 concentration on microstructural features is also investigated and the superconducting properties of these large grain superconductors are presented. © 2005 IEEE.

GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE

The issues and challenges of growing GaN-based structures on large area Si substrates have been studied. These include Si slip resulting from large temperature non-uniformities and cracking due to differential thermal expansion. Using an A1N nucleation layer in conjunction with an AlGaN buffer layer for stress management, and together with the interactive use of real time in-situ optical monitoring it was possible to realise flat, crack-free and uniform GaN and LED structures on 6-inch Si (111) substrates. The EL performance of processed LED devices was also studied on-wafer, giving good EL characteristics including a forward bias voltage of ∼3.5 V at 20 mA from a 500 μm × 500 μm device. © 2009 SPIE.