1.4 kV, 25 A, PT and NPT Trench IGBTs with optimum forward characteristics

In this paper we report the development of 1.4 kV 25 A PT and NPT Trench IGBTs with ultra-low on-resistance, latch-up free operation and highly superior overall performance when compared to previously reported DMOS IGBTs in the same class. We have fabricated both PT and transparent anode NPT devices to cover a wide range of applications which require very low on-state losses or very fast time with ultra-low switching losses. The minimum forward voltage drop at the standard current density of 100A/cm2 was 1.1 V for PT non-irradiated devices and 2.1 V for 16 MRad PT irradiated devices. The non-irradiated transparent emitter NPT structure has a typical forward voltage drop of 2.2 V, a turn-off time below 100 ns and turn-off energy losses of 11.2 mW/cm2 at 125 C. The maximum controllable current density was in excess of 1000A/cm2.

1 × 4 space switching and simultaneous all-optical wavelength conversion at 2.488Gbit/s using a single monolithically integrated multiwavelength laser

A novel InGaAs/InGaAsP/InP integrated multiwavelength grating cavity laser is presented, which has been used to demonstrate space switching and simultaneous all-optical wavelength conversion at bit rates of 2.488 Gbit/s. This has been achieved using a single monolithically integrated device without the need for post-filtering to separate the converted signal from the input.