Tailoring the local interaction between graphene layers in graphite at the atomic scale and above using scanning tunneling microscopy.

With recent developments in carbon-based electronics, it is imperative to understand the interplay between the morphology and electronic structure in graphene and graphite. We demonstrate controlled and repeatable vertical displacement of the top graphene layer from the substrate mediated by the scanning tunneling microscopy (STM) tip-sample interaction, manifested at the atomic level as well as over superlattices spanning several tens of nanometers. Besides the full-displacement, we observed the first half-displacement of the surface graphene layer, confirming that a reduced coupling rather than a change in lateral layer stacking is responsible for the triangular/honeycomb atomic lattice transition phenomenon, clearing the controversy surrounding it. Furthermore, an atomic scale mechanical stress at a grain boundary in graphite, resulting in the localization of states near the Fermi energy, is revealed through voltage-dependent imaging. A method of producing graphene nanoribbons based on the manipulation capabilities of the STM is also implemented.

Parameters influencing the performance of an IGBT gate drive

This paper presents an improvement of an IGBT gate drive implementing Active Voltage Control (AVC), and investigates the impact of various parameters affecting its performance. The effects of the bandwidths of various elements and the gains of AVC are shown in simulation and experimentally. Also, the paper proposes connecting a small Active Snubber between the IGBT collector and its gate integrated within the AVC. The effect of this snubber on enhancing the stability of the gate drive is demonstrated. It will be shown that using a wide bandwidth operational amplifier and integrating the Active Snubber within the gate drive reduces the minimum gate resistor required to achieve stability of the controller. Consequently, the response time of the IGBT to control signals is significantly reduced, the switching losses then can be minimised and, hence, the performance of gate drive as whole is improved. This reflects positively on turn-off and turn-on transitions achieving voltage sharing between the IGBTs connected in series to construct a higher voltage switch, making series IGBTs a feasible practice. ©2008 IEEE.

The roles of energy and material efficiency in meeting steel industry CO2 targets.

Identifying strategies for reducing greenhouse gas emissions from steel production requires a comprehensive model of the sector but previous work has either failed to consider the whole supply chain or considered only a subset of possible abatement options. In this work, a global mass flow analysis is combined with process emissions intensities to allow forecasts of future steel sector emissions under all abatement options. Scenario analysis shows that global capacity for primary steel production is already near to a peak and that if sectoral emissions are to be reduced by 50% by 2050, the last required blast furnace will be built by 2020. Emissions reduction targets cannot be met by energy and emissions efficiency alone, but deploying material efficiency provides sufficient extra abatement potential.

Decoupling method for vector control of the brushless doubly-fed machine

The brushless doubly-fed machine exhibits rotor-speed-dependent, cross-coupling effects between inputs and outputs when vector control is implemented. Manipulation of the model equations shows that these effects are represented by rotation angles. A parameter-independent decoupling method is presented which reduces these cross-coupling disturbances by estimating the rotation angle and applying it back to the controller. © 2013 IEEE.