Fabrication of 25nm wide gold lines using nanometer scale lithography and ionized cluster beam deposition

It becomes increasingly difficult to make continuous metal lines with well defined thickness and edges by the lift-off technique as the line width is decreased. We describe in this paper a technique in which the combination of high resolution electron beam lithography and ionized cluster beam (ICB) deposition has enabled very high quality gold lines ({all equal to}25nm wide) to be obtained on thick single crystal silicon substrates. © 1990.

Road damage due to dynamic tyre forces measured on a public road

This paper describes a series of tests conducted on a UK trunk road, in which the dynamic tyre forces generated by over 1500 heavy goods vehicles (HGVs) were measured using a load measuring mat containing 144 capacitive strip sensors. The data was used to investigate the relative road damaging potential of the various classes of vehicles, and the degree of spatial repeatability of tyre forces present in a typical highway fleet. Approximately half the vehicles tested were found to contribute to a spatially repeatable pattern of pavement loading. On average, air suspended vehicles were found to generate lower dynamic load coefficients than steel suspended vehicles. However, air suspended vehicles also generated higher mean levels of theoretical road damage (aggregate force) than steel suspended vehicles, indicating that the ranking of suspensions depends on the pavement damage criterion used.

Thickness control of Molecular Beam Epitaxy grown layers at the 0.01-0.1 monolayer level

Electron tunnelling through semiconductor tunnel barriers is exponentially sensitive to the thickness of the barrier layer, and in the most common system, the AlAs tunnel barrier in GaAs, a one monolayer variation in thickness results in a 300% variation in the tunnelling current for a fixed bias voltage. We use this degree of sensitivity to demonstrate that the level of control at 0.06 monolayer can be achieved in the growth by molecular beam epitaxy, and the geometrical variation of layer thickness across a wafer at the 0.01 monolayer level can be detected.

Numerical analysis of shallow foundations under combined horizontal and torsional loading

Foundations of subsea infrastructure in deep water subjected to asymmetric environmental loads have underscored the importance of combined torsional and horizontal loading effects on the bearing capacity of rectangular shallow foundations. The purpose of this study is to investigate the undrained sliding and torsional bearing capacity of rectangular and square shallow foundations together with the interaction response under combined loading using three-dimensional finite element (3D-FE) analysis. Upper bound plastic limit analysis is employed to establish a reference value for horizontal and torsional bearing capacity, and an interaction relationship for the combined loading condition. Satisfactory agreement of plastic limit analysis (PLA) and 3D-FE results for ultimate capacity and interaction curves ensures that simple PLA solution could be used to evaluate the bearing capacity problem of foundation under combined sliding and torsion.