Language model cross adaptation for LVCSR system combination

State-of-the-art large vocabulary continuous speech recognition (LVCSR) systems often combine outputs from multiple subsystems developed at different sites. Cross system adaptation can be used as an alternative to direct hypothesis level combination schemes such as ROVER. In normal cross adaptation it is assumed that useful diversity among systems exists only at acoustic level. However, complimentary features among complex LVCSR systems also manifest themselves in other layers of modelling hierarchy, e.g., subword and word level. It is thus interesting to also cross adapt language models (LM) to capture them. In this paper cross adaptation of multi-level LMs modelling both syllable and word sequences was investigated to improve LVCSR system combination. Significant error rate gains up to 6.7% rel. were obtained over ROVER and acoustic model only cross adaptation when combining 13 Chinese LVCSR subsystems used in the 2010 DARPA GALE evaluation. © 2010 ISCA.

EXPERIMENTAL TECHNIQUES IN COMBUSTION USE OF IN-CYLINDER IONISATION FOR THE INVESTIGATION AND CONTROL OF SPARK IGNITION ENGINES.

Ions generated during combustion have been used in three ways to give qualitative combustion information. Langmuir type probes have been inserted into the combustion chamber opposite the spark plug location. The centre electrode of the sparking plug itself has been used to produce an ionisation signal from the slightly ionised gases remaining after the flame front has departed. The spark discharge at ignition time has been used as an anemometer.

Active Voltage Control on series connection of IGBTs and diode recovery optimization

In this paper an Active Voltage Control (AVC) technique is presented, for series connection of insulated-gate-bipolar-transistors (IGBT) and control of diode recovery. The AVC technique can control the switching trajectory of an IGBT according to a pre-set reference signal. In series connections, every series connected IGBT follows the reference and so that the dynamic voltage sharing is achieved. Another key advantage for AVC is that by changing the reference signal at turn-on, the diode recovery can be optimised. © 2010 IEEE.

Thickness control of Molecular Beam Epitaxy grown layers at the 0.01-0.1 monolayer level

Electron tunnelling through semiconductor tunnel barriers is exponentially sensitive to the thickness of the barrier layer, and in the most common system, the AlAs tunnel barrier in GaAs, a one monolayer variation in thickness results in a 300% variation in the tunnelling current for a fixed bias voltage. We use this degree of sensitivity to demonstrate that the level of control at 0.06 monolayer can be achieved in the growth by molecular beam epitaxy, and the geometrical variation of layer thickness across a wafer at the 0.01 monolayer level can be detected.