Language model cross adaptation for LVCSR system combination

State-of-the-art large vocabulary continuous speech recognition (LVCSR) systems often combine outputs from multiple subsystems developed at different sites. Cross system adaptation can be used as an alternative to direct hypothesis level combination schemes such as ROVER. In normal cross adaptation it is assumed that useful diversity among systems exists only at acoustic level. However, complimentary features among complex LVCSR systems also manifest themselves in other layers of modelling hierarchy, e.g., subword and word level. It is thus interesting to also cross adapt language models (LM) to capture them. In this paper cross adaptation of multi-level LMs modelling both syllable and word sequences was investigated to improve LVCSR system combination. Significant error rate gains up to 6.7% rel. were obtained over ROVER and acoustic model only cross adaptation when combining 13 Chinese LVCSR subsystems used in the 2010 DARPA GALE evaluation. © 2010 ISCA.

TIME RESOLVED REFLECTIVITY MEASUREMENTS APPLIED TO RAPID ISOTHERMAL ANNEALING OF ION IMPLANTED SILICON.

The annealing of ion implantation damage in silicon by rapid isothermal heating has been monitored by the time resolved reflectivity (TRR) method. This technique was applied simultaneously at a wavelength of 632. 8nm and also at 1152nm, where the optical absorption coefficient of silicon is less. The two wavelength method simplifies the interpretation of TRR results, extends the measurement depth and allows good resolution of the position of the interface between amorphous and crystalline silicon. The regrowth of amorphous layers in silicon, created by self implantation and implanted with electrically active impurities, was observed. Regrowth in rapid isothermal annealing occurs during the heating up stage of typical thermal cycles. Impurities such as B, P, and As increase the regrowth rate in a manner consistent with a vacancy model for regrowth. The maximum regrowth rate in boron implanted silicon is limited by the solid solubility.

Studies of inverter ratings of BDFM adjustable speed drive or generator systems

This paper discusses the inverter ratings of Brushless Doubly-Fed Machine (BDFM) adjustable speed drive (ASD) or generator (ASG) systems. Based on the per phase equivalent circuit model, the ratings of the two inverters in a bidirectional converter are evaluated individually. An approach to minimise the total inverter rating is presented, taking into account power factor constraints of the power grid. The effects of speed deviation and control winding excitation on the inverter ratings are discussed. Predictions of inverter ratings are presented with experimental verification. A design example is also provided in which the total inverter rating is minimised for a practical BDFM based ASG system. © 2005 IEEE.

Modeling of MOS-side carrier injection in trench-gate IGBTs

A compact trench-gate IGBT model that captures MOS-side carrier injection is developed. The model retains the simplicity of a one-dimensional solution to the ambipolar diffusion equation, but at the same time captures MOS-side carrier injection and its effects on steady-state carrier distribution in the drift region and on switching waveforms. © 2007 IEEE.

Thickness control of Molecular Beam Epitaxy grown layers at the 0.01-0.1 monolayer level

Electron tunnelling through semiconductor tunnel barriers is exponentially sensitive to the thickness of the barrier layer, and in the most common system, the AlAs tunnel barrier in GaAs, a one monolayer variation in thickness results in a 300% variation in the tunnelling current for a fixed bias voltage. We use this degree of sensitivity to demonstrate that the level of control at 0.06 monolayer can be achieved in the growth by molecular beam epitaxy, and the geometrical variation of layer thickness across a wafer at the 0.01 monolayer level can be detected.