Evaluation of termination techniques for 4H-SiC PiN diodes and trench JFETs

An investigation concerning suitable termination techniques for 4H-SiC trench JFETs is presented. Field plates, p+ floating rings and junction termination extension techniques are used to terminate 1.2kV class PiN diodes. The fabricated PiN diodes evaluated here have a similar design to trench JFETs. Therefore, the conclusions for PiN diodes can be applied to JFET structures as well. Numerical simulations are also used to illustrate the effect of the terminations on the diodes' blocking mode behaviour.

Ferroelectric liquid crystal mixtures containing chiral ether and ester compounds with the 2-arylidene-p-menthan-3-one skeleton

Some 1R,4R-2-(4-phenylbenzylidene)-p-menthane-3-one derivatives containing the ether or ester linking group between benzene rings of the arylidene fragment have been studied as chiral dopants in ferroelectric liquid crystal systems based on the eutectic mixture (1:1) of two phenylbenzoate derivatives CmH2m+1OC6H4COOC6 H4OCnH2n+1 (n = 6; m = 8, 10). The ferroelectric properties of these compositions (spontaneous polarization, rotation viscosity, smectic tilt angle as well as quantitative characteristics of their concentration dependences) were compared with those for systems including chiral dopants containing no linking group. Ferroelectric parameters of the induced ferroelectric compositions studied have been shown to depend essentially on the presence of the linking group between benzene rings and its nature as well as on the number of the benzene rings in the rigid molecular core of the chiral dopants used. For all ferroelectric liquid crystal systems studied, the influence of the chiral dopants on the thermal stability of N*, SmA and SmC* mesophases has been quantified. The influence of the linking group nature in the dopant molecules on the characteristics of the systems studied is discussed taking into account results of the conformational analysis carried out by the semi-empirical AM1 and PM3 methods.

Low-bias terahertz amplitude modulator based on split-ring resonators and graphene.

Split-ring resonators represent the ideal route to achieve optical control of the incident light at THz frequencies. These subwavelength metamaterial elements exhibit broad resonances that can be easily tuned lithographically. We have realized a design based on the interplay between the resonances of metallic split rings and the electronic properties of monolayer graphene integrated in a single device. By varying the major carrier concentration of graphene, an active modulation of the optical intensity was achieved in the frequency range between 2.2 and 3.1 THz, achieving a maximum modulation depth of 18%, with a bias as low as 0.5 V.

Terahertz optical modulator based on metamaterial split-ring resonators and graphene

The integration of quantum cascade lasers with devices capable of efficiently manipulating terahertz light represents a fundamental step for many different applications. Split-ring resonators, subwavelength metamaterial elements exhibiting broad resonances that are easily tuned lithographically, represent the ideal route to achieve such optical control of the incident light. We have realized a design based on the interplay between metallic split rings and the electronic properties of a graphene monolayer integrated into a single device. By acting on the doping level of graphene, an active modulation of the optical intensity was achieved in the frequency range between 2.2 and 3.1 THz, with a maximum modulation depth of 18%. © 2014 Society of Photo-Optical Instrumentation Engineers.

Graphene-based optical modulator realized in metamaterial split-ring resonators operating in the THz frequency range

The integration of quantum cascade lasers with devices capable of efficiently manipulating terahertz light, represents a fundamental step for many different applications. Split-ring resonators, sub-wavelength metamaterial elements exhibiting broad resonances that are easily tuned lithographically, represent the ideal route to achieve such optical control of the incident light. We have realized a design based on the interplay between metallic split rings and the electronic properties of a graphene monolayer integrated into a single device. By acting on the doping level of graphene, an active modulation of the optical intensity was achieved in the frequency range between 2.2 THz and 3.1 THz, with a maximum modulation depth of 18%.

π-Conjugated molecules with fused rings for organic field-effect transistors: design, synthesis and applications

π-Conjugated molecular materials with fused rings are the focus of considerable interest in the emerging area of organic electronics, since the combination of excellent charge carrier mobility and high stability may lead to their practical applications. This tutorial review discusses the synthesis, properties and applications of π-conjugated organic semiconducting materials, especially those with fused rings. The achievements to date, the remaining problems and challenges, and the key research that needs to be done in the near future are all discussed.