Ultrafast all-optical wavelength conversion using an integrated amplifier/DFB laser

Wavelength conversion in the 1550 nm regime was achieved in an integrated semiconductor optical amplifier (SOA)/DFB laser by modulating the output power of the laser with a light beam of a different wavelength externally injected into the SOA section. A 12 dB output extinction ratio was obtained for an average coupled input power of 75 μW with the laser section driven at 65 mA and the amplifier section at 180 mA. The response time achieved was as low as 13 ps with the laser biased at 175 mA even with low extinction ratios. The laser exhibits a similar recovery time allowing potentially very high bit-rate operation.

10-Gbit/s transmission over 300-m standard multimode fiber using multilevel coding and 2-channel WDM

A combination of multilevel coding schemes and simple two-channel wavelength division multiplexing (WDM) at 1300 and 1550 nm was used to transmit an aggregate of 10 Gbit/s over 300 m of multimode fiber that is typical of that employed in current Local Area Networks (LANs). It was shown that this technique could be a simple solution for achieving 10 Gigabit ethernet links over installed multimode fiber building backbones.

Plasmonic band gaps and waveguide effects in carbon nanotube arrays based metamaterials.

Highly dense periodic arrays of multiwalled carbon nanotubes behave like low-density plasma of very heavy charged particles, acting as metamaterials. These arrays with nanoscale lattice constants can be designed to display extended plasmonic band gaps within the optical regime, encompassing the crucial optical windows (850 and 1550 nm) simultaneously. We demonstrate an interesting metamaterial waveguide effect displayed by these nanotube arrays containing line defects. The nanotube arrays with lattice constants of 400 nm and radius of 50 nm were studied. Reflection experiments conducted on the nanoscale structures were in agreement with numerical calculations.

Low molar mass organosiloxane liquid crystals for telecommunication applications

Mixtures of two proprietary low molar mass organosiloxane liquid crystals were studied in order to improve their alignment and optimize their electro-optic properties for telecommunication applications. Over a certain concentration range, mixtures exhibited an isotropic-chiral smectic A-chiral smectic C (Iso-SmA*-SmC*) phase sequence leading to exceptionally good alignment. At room temperature, the spontaneous polarization of these samples was reduced from 225 nC cm -2 in the pure SmC* liquid crystal to as low as 75 nC cm -2 in the mixture. Within this concentration range, the ferroelectric tilt angle could be varied between 35° and 15°, while the rise time decreased by 69.4%. The rise times were < 45 μs for moderate electric fields of ± 10 V μm -1 in the SmC* phase and ∼ 4 μs, independent of electric field, in the SmA* phase. At λ = 1550 nm, these mixtures exhibited very large extinction ratios of {\sim} 60 dB for binary switching in the SmC* phase and ∼ 55 dB continuous variable attenuation in the SmA* phase. © 2012 IEEE.

Ferroelectric liquid crystal mixture integrated into optical waveguides

We report an on-chip integrated ferroelectric liquid crystal (FLC) waveguide structure suitable for telecommunication applications. Single gaps with different widths of 5, 10, and 20 μ m inside individual silica waveguides were filled with an FLC mixture. The waveguide devices operate as a binary switch or an attenuator in a temperature range from 30 °C to 60 °C. The FLC mixture exhibited a good alignment quality in these gaps without alignment layers. A good extinction ratio of up to 33.9 dB and a low insertion loss of <4.3 dB at λ = 1550 nm were observed. Switching times of <100 μs were obtained for the low electric fields applied in this experiment. © 2012 IEEE.

Plasmonic band gaps and waveguide effects in carbon nanotube arrays based metamaterials

Highly dense periodic arrays of multiwalled carbon nanotubes behave like low-density plasma of very heavy charged particles, acting as metamaterials. These arrays with nanoscale lattice constants can be designed to display extended plasmonic band gaps within the optical regime, encompassing the crucial optical windows (850 and 1550 nm) simultaneously. We demonstrate an interesting metamaterial waveguide effect displayed by these nanotube arrays containing line defects. The nanotube arrays with lattice constants of 400 nm and radius of 50 nm were studied. Reflection experiments conducted on the nanoscale structures were in agreement with numerical calculations.

Enhancement of room temperature sub-bandgap light emission from silicon photonic crystal nanocavity by Purcell effect

We report the enhancement of sub-bandgap photoluminescence from silicon via the Purcell effect. We couple the defect emission from silicon, which is believed to be due to hydrogen incorporation into the lattice, to a photonic crystal (PhC) nanocavity. We observe an up to 300-fold enhancement of the emission at room temperature at 1550 nm, as compared to an unpatterned sample, which is then comparable to the silicon band-edge emission. We discuss the possibility of enhancing this emission even further by introducing additional defects by ion implantation, or by treating the silicon PhC nanocavity with hydrogen plasma. © 2011 Elsevier B.V.

Demonstration of submicron square-like silicon waveguide using optimized LOCOS process.

We demonstrate the design, fabrication and experimental characterization of a submicron-scale silicon waveguide that is fabricated by local oxidation of silicon. The use of local oxidation process allows defining the waveguide geometry and obtaining smooth sidewalls. The process can be tuned to precisely control the shape and the dimensions of the waveguide. The fabricated waveguides are measured using near field scanning optical microscope at 1550 nm wavelength. These measurements show mode width of 0.4 µm and effective refractive index of 2.54. Finally, we demonstrate the low loss characteristics of our waveguide by imaging the light scattering using an infrared camera.

Defect-assisted sub-bandgap avalanche photodetection in interleaved carrier-depletion silicon waveguide for telecom band

This paper demonstrates on chip sub bandgap detection of light at 1550 nm wavelength using the configuration of interleaved PN junctions along a silicon waveguide. The device operates under reverse bias in a nearly fully depleted mode, thus minimizing the free carrier plasma losses and significantly increases the detection volume at the same time. Furthermore, substantial enhancement in responsivity is observed by the transition from reverse bias to avalanche breakdown regime. The observed high responsivity of up to 7.2 mA/W at 3 V is attributed to defect assisted photogeneration, where the defects are related to the surface and the bulk of the waveguide. © 2014 AIP Publishing LLC.

High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380 nm

In this paper we report the design of high room temperature photoluminescence internal efficiency InGaN-based quantum well structures emitting in the near ultraviolet at 380 nm. To counter the effects of nonradiative recombination the quantum wells were designed to have a large indium fraction, high barriers, and a small quantum well thickness. To minimize the interwell and interbarrier thickness fluctuations we used Al0.2In0.005Ga0.795N barriers, where the inclusion of the small fraction of indium was found to lead to fewer structural defects and a reduction in the layer thickness fluctuations. This approach has led us to achieve, for an In0.08Ga0.92N/Al0.2In0.005Ga0.795N multiple quantum well structure with a well width of 1.5 nm, a photoluminescence internal efficiency of 67% for peak emission at 382 nm at room temperature. (c) 2007 American Institute of Physics.