How to achieve high mobility thin film transistors by direct deposition of silicon using 13.56 MHz RF PECVD?

CMOS nanocrystalline silicon thin film transistors with high field effect mobility are reported. The transistors were directly deposited by radio-frequency plasma enhanced chemical vapor deposition at 150°C The transistors show maximum field effect mobility of 450 cm2/V-s for electrons and 100 cm2/V-s for holes at room temperature. We attribute the high mobilities to a reduction of the oxygen content, which acts as an accidental donor. Indeed, secondary ion mass spectrometry measurements show that the impurity concentration in the nanocrystalline Si layer is comparable to, or lower than, the defect density in the material, which is already low thanks to hydrogen passivation.

Comment on "Acoustic chaos in a duct with two separate sound sources" [J. Acoust. Soc. Am. 110, 120-126 (2001)] (L)

In a paper published in this journal in 2001 by Dong [W. G. Dong, X. Y. Huang, and Q. L. Wo, J. Acoust. Soc. Am. 110, 120-126 (2001)] it was claimed that acoustic chaos was obtained experimentally by the nonlinear interaction of two acoustic waves in a duct. In this comment a simple experimental setup and an analytical model is used to show that the dynamics of such systems corresponds to a quasiperiodic motion, and not to a chaotic one. © 2008 Acoustical Society of America.