A Comparative Picture of Corporate Social Responsibility Approaches by Leading Companies in the United Kingdom and Brazil

Purpose - This paper compares CSR strategy, stakeholder engagement and overseas approaches of six leading companies which have large potential environmental and social impacts, influential stakeholders and notable CSR actions. Design/methodology/approach - It is an exploratory survey based on interviews of senior executives from British and Brazilian companies operating in the steel, petroleum and retail sectors and makes comparisons between and within them. Findings - British companies interviewed are more rule-based, adopt an implicit CSR approach; react to stakeholder’s demands based on moral motives and focus on environmental issues. The Brazilian companies, reviewed in this study, adopt an explicit CSR approach, have relational motives to engage with stakeholders and are more concerned with building a responsible image and narrowing social gaps. Research limitations/implications - The survey is based on perceptions of senior executives interviewed which may or may not correspond to actual practices. The sample size restricts generalization of results and specific firms interviewed may not represent the prevailing CSR business strategy in their respective countries. Practical implications - British companies can learn from the Brazilian experience how to become more innovative in a broader approach to CSR. Brazil should reinforce its legal framework to provide a more systematic and rule-based approach to CSR close to the UK experience. Originality/value - The way CSR is conceived and implemented depends on the ethical, socioeconomic, legal and institutional environment of the country in which the firm operates

Optimising the dynamic performance of an all-wide-bandgap cascode switch

A SPICE simulation model of a novel cascode switch that combines a high voltage normally-on silicon carbide (SiC) junction field effect transistor (JFET) with a low voltage enhancement-mode gallium nitride field effect transistor (eGaN FET) has been developed, with the aim of optimising cascode switching performance. The effect of gate resistance on stability and switching losses is investigated and optimum values chosen. The effects of stray inductance on cascode switching performance are considered and the benefits of low inductance packaging discussed. The use of a positive JFET gate bias in a cascode switch is shown to reduce switching losses as well as reducing on-state losses. The findings of the simulation are used to produce a list of priorities for the design and layout of wide-bandgap cascode switches, relevant to both SiC and GaN high voltage devices. © 2013 IEEE.