Switching performance of epitaxially grown normally-off 4H-SiC JFET

Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junction field effect transistor (JFET) is investigated. Typical on-state resistance Ron was 6-10mΩcm2 at VGS = 2.5V and the breakdown voltage between the range of 1.5-1.8kV was realized at VGS = -5V for normally-off like JFETs. It was found that the turn-on energy delivers the biggest part of the switching losses. The dependence of switching losses from gate resistor is nearly linear, suggesting that changing the gate resistor, a way similar to Si-IGBT technology, can easily control di/dt and dv/dt. Turn-on losses at 200°C are lower compared to those at 25°C, which indicates the influence of the high internal p-type gate layer resistance. Inductive switching numerical analysis suggested the strong influence of channel doping conditions on the turn-on switching performance. The fast switching normally-off JFET devices require heavily doped narrow JFET channel design. © (2009) Trans Tech Publications, Switzerland.

On-line learning of mutually orthogonal subspaces for face recognition by image sets.

We address the problem of face recognition by matching image sets. Each set of face images is represented by a subspace (or linear manifold) and recognition is carried out by subspace-to-subspace matching. In this paper, 1) a new discriminative method that maximises orthogonality between subspaces is proposed. The method improves the discrimination power of the subspace angle based face recognition method by maximizing the angles between different classes. 2) We propose a method for on-line updating the discriminative subspaces as a mechanism for continuously improving recognition accuracy. 3) A further enhancement called locally orthogonal subspace method is presented to maximise the orthogonality between competing classes. Experiments using 700 face image sets have shown that the proposed method outperforms relevant prior art and effectively boosts its accuracy by online learning. It is shown that the method for online learning delivers the same solution as the batch computation at far lower computational cost and the locally orthogonal method exhibits improved accuracy. We also demonstrate the merit of the proposed face recognition method on portal scenarios of multiple biometric grand challenge.

Electroosmotic flow analysis of a branched U-turn nanofluidic device.

In this paper, we present the analysis of electroosmotic flow in a branched -turn nanofluidic device, which we developed for detection and sorting of single molecules. The device, where the channel depth is only 150 nm, is designed to optically detect fluorescence from a volume as small as 270 attolitres (al) with a common wide-field fluorescent setup. We use distilled water as the liquid, in which we dilute 110 nm fluorescent beads employed as tracer-particles. Quantitative imaging is used to characterize the pathlines and velocity distribution of the electroosmotic flow in the device. Due to the device's complex geometry, the electroosmotic flow cannot be solved analytically. Therefore we use numerical flow simulation to model our device. Our results show that the deviation between measured and simulated data can be explained by the measured Brownian motion of the tracer-particles, which was not incorporated in the simulation.

Ultrafast sputtered ZnO thin films with high kT for acousticwave device applications

The fabrication of high frequency acoustic wave devices requires thedevelopment of thin films of piezoelectric materials with improved morphologicaland electro-acoustical properties. In particular, the crystalline orientationof the films, surface morphology, film stress and electrical resistivity are keyissues for the piezoelectric response. In the work reported here, ZnO thinfilms were deposited at high rates (>50 nm/min) using a novel process knownas the High Target Utilisation Sputtering (HiTUS). The films deposited possessexcellent crystallographic orientation, high resistivity (>109ωm), and exhibit surface roughness and film stress one order of magnitudelower than films grown with standard magnetron sputtering. The electromechanicalcoupling coefficient of the films, kT, was precisely calculated byimplementing the resonant spectrum method, and was found to be at least 6%higher than any previously reported kT of magnetron sputtered filmsto the Authors' knowledge. The low film stress of the film is deemed as one ofthe most important factors responsible for the high k T valueobtained. © 2010 IEEE.

Innovative fabrication of PZT pillar arrays by a colloidal approach

An innovative approach for fabricating pillar arrays for ultrasonic transducer applications is disclosed. It involves the preparation of concentrated piezoelectric lead zirconate titanate (PZT) suspensions in aqueous solutions of epoxy resin and its polymerization upon adding a polyamine based hardener. Zeta potential and rheological measurements revealed that 1wt.% dispersant, 20wt.% of epoxy resin and a hardener/epoxy resin ratio of 0.275mLg -1, were the optimized contents to obtain strong PZT samples with high green strength (35.21±0.39MPa). Excellent ellipsoidal and semi-circle shaped pillar arrays presenting lateral dimensions lower than 10μm and 100μm height were successfully achieved. The organics burning off was conducted at 500°C for 2h at a heating rate of 1°Cmin -1. Sintering was then carried out in the same heating cycle at 1200°C for 1h. The microstructures of the green and sintered ceramics were homogeneous and no large defects could be detected. © 2011 Elsevier Ltd.

Numerical simulation of single-stream jets from a serrated nozzle

Hybrid large-eddy type simulations for cold jet flows from a serrated nozzle are performed at an acoustic Mach number Ma ac = 0.9 and Re = 1.03×10 6. Since the solver being used tends towards having dissipative qualities, the subgrid scale (SGS) model is omitted, giving a numerical type LES (NLES) or implicit LES (ILES) reminiscent procedure. To overcome near wall streak resolution problems a near wall RANS (Reynolds averaged Navier-Stokes) model is smoothly blended to the LES making a hybrid RANS-ILES. The geometric complexity of the serrated nozzle is fully considered without simplification or emulation. An improved but still modest hexahedral multi-block grid with circa 20 million grid points (with respect to 12.5 million in Xia et al.; Int J Heat Fluid Flow 30:1067-1079, 2009) is used. Despite the modest grid size, encouraging and improved results are obtained. Directly resolved mean and second-order fluctuating quantities along the jet centerline and in the jet shear layer compare favorably with measurements. The radiated far-field sound predicted using the Ffowcs Williams and Hawkings (FW-H) surface integral method shows good agreement with the measurements in directivity and sound spectra. © 2011 Springer Science+Business Media B.V.