Electronic structure and surface properties of SrBi2Ta2O9 and related oxides

The electronic structure of SrBi2Ta2O9 and related oxides such as SrBi2Nb2O9, Bi2WO6 and Bi3Ti4O12 have been calculated by the tight-binding method. In each case, the band gap is about 4.1 eV and the band edge states occur on the Bi-O layers and consist of mixed O p/Bi s states at the top of the valence band and Bi p states at the bottom of the conduction band. The main difference between the compounds is that Nb 5d and Ti 4d states in the Nb and Ti compounds lie lower than the Ta 6d states in the conduction band. The surface pinning levels are found to pin Schottky barriers 0.8 eV below the conduction band edge.

Understanding function and function-to-form evolution

This is a report on a workshop held at Cambridge University Engineering Design Centre, 17-10 June 1992. This workshop was held to discuss the issue of 'function' and 'function-to-form' evolution in mechanical design. The authors organised this workshop as they felt that their understanding of these topics was incomplete and that discussions between researchers might help to clarify some key issues.

The topic chosen for the workshop proved to be a stimulating one. The term 'function' is part of a designer's daily vocabulary, however there is poor agreement about its definition. In order to develop computer systems to support product evolution, a precise definition is required. Further the value of 'function' and 'function-to-form' evolution as a good choice of workshop topic is evident from the lack of firm conclusions that resulted from the sessions. This lack of consensus made for lively discussion and left participants questioning many of their preconceived ideas.

Attendance at the workshop was by invitation only. A list of the participants (not all those invited could attend due to time and financial constraints) is given in Appendix 1.