6 resultados para 03050930 TM-6

em Cambridge University Engineering Department Publications Database


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We demonstrate mode-locking of a thulium-doped fiber laser operating at 1.94 μm, using a graphene-polymer based saturable absorber. The laser outputs 3.6 ps pulses, with ∼0.4 nJ energy and an amplitude fluctuation ∼0.5%, at 6.46 MHz. This is a simple, low-cost, stable and convenient laser oscillator for applications where eye-safe and low-photon-energy light sources are required, such as sensing and biomedical diagnostics. © 2012 Optical Society of America.

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The issues and challenges of growing GaN-based structures on large area Si substrates have been studied. These include Si slip resulting from large temperature non-uniformities and cracking due to differential thermal expansion. Using an A1N nucleation layer in conjunction with an AlGaN buffer layer for stress management, and together with the interactive use of real time in-situ optical monitoring it was possible to realise flat, crack-free and uniform GaN and LED structures on 6-inch Si (111) substrates. The EL performance of processed LED devices was also studied on-wafer, giving good EL characteristics including a forward bias voltage of ∼3.5 V at 20 mA from a 500 μm × 500 μm device. © 2009 SPIE.