Polarisation diversity of conformal arrays based on geometric algebra via convex optimisation

A simple and general design procedure is presented for the polarisation diversity of arbitrary conformal arrays; this procedure is based on the mathematical framework of geometric algebra and can be solved optimally using convex optimisation. Aside from being simpler and more direct than other derivations in the literature, this derivation is also entirely general in that it expresses the transformations in terms of rotors in geometric algebra which can easily be formulated for any arbitrary conformal array geometry. Convex optimisation has a number of advantages; solvers are widespread and freely available, the process generally requires a small number of iterations and a wide variety of constraints can be readily incorporated. The study outlines a two-step approach for addressing polarisation diversity in arbitrary conformal arrays: first, the authors obtain the array polarisation patterns using geometric algebra and secondly use a convex optimisation approach to find the optimal weights for the polarisation diversity problem. The versatility of this approach is illustrated via simulations of a 7×10 cylindrical conformal array. © 2012 The Institution of Engineering and Technology.

Improved switching uniformity and low-voltage operation in TaO x-based RRAM using Ge reactive layer

Significant improvements in the spatial and temporal uniformities of device switching parameters are successfully demonstrated in Ge/TaOx bilayer-based resistive switching devices, as compared with non-Ge devices. In addition, the reported Ge/TaOx devices also show significant reductions in the operation voltages. Influence of the Ge layer on the resistive switching of TaOx-based resistive random access memory is investigated by X-ray spectroscopy and the theory of Gibbs free energy. Higher uniformity is attributed to the confinement of the filamentary switching process. The presence of a larger number of interface traps, which will create a beneficial electric field to facilitate the drift of oxygen vacancies, is believed to be responsible for the lower operation voltages in the Ge/TaO x devices. © 1980-2012 IEEE.