UEGO based measurement of EGR rate and residual gas fraction

A technique is presented for measuring the exhaust gas recirculation (EGR) and residual gas fraction (RGF) using a fast UEGO based O2 measurement of the manifold or in-cylinder gases, and of the exhaust gases. The technique has some advantages over the more common CO2-based method. In the case of an RGF measurement, fuel interference must be eliminated and special fuelling arrangements are is required. It is shown how a UEGO-based measurement, though sensitive to reactive species in the exhaust (such as H 2), as a system reports EGR/ RGF rates faithfully. Preliminary tests showed that EGR and RGF measurements using the O2 approach agreed well with CO2-based measurements. © 2011 SAE International.

UEGO based measurement of EGR rate and residual gas fraction

A technique is presented for measuring the exhaust gas recirculation (EGR) and residual gas fraction (RGF) using a fast UEGO based O2 measurement of the manifold or in-cylinder gases, and of the exhaust gases. The technique has some advantages over the more common CO2-based method. In the case of an RGF measurement, fuel interference must be eliminated and special fuelling arrangements are is required. It is shown how a UEGO-based measurement, though sensitive to reactive species in the exhaust (such as H 2), as a system reports EGR/ RGF rates faithfully. Preliminary tests showed that EGR and RGF measurements using the O2 approach agreed well with CO2-based measurements. Copyright © 2011 SAE International.

Measuring the composition of AlGaN layers in GaN based structures grown on 150 mm Si substrates using (2 0 5) reciprocal space maps

A critical element for the successful growth of GaN device layers on Si is accurate control of the AlGaN buffer layers used to manage strain. Here we present a method for measuring the composition of the AlGaN buffer layers in device structures which makes use of a one-dimensional x-ray detector to provide efficient measurement of a reciprocal space map which covers the full compositional range from AlN to GaN. Combining this with a suitable x-ray reflection with low strain sensitivity it is possible to accurately determine the Al fraction of the buffer layers independent of their relaxation state. © 2013 IOP Publishing Ltd.

Dependence of dye regeneration and charge collection on the pore-filling fraction in solid-state dye-sensitized solar cells

Solid-state dye-sensitized solar cells rely on effective infiltration of a solid-state hole-transporting material into the pores of a nanoporous TiO 2 network to allow for dye regeneration and hole extraction. Using microsecond transient absorption spectroscopy and femtosecond photoluminescence upconversion spectroscopy, the hole-transfer yield from the dye to the hole-transporting material 2,2′,7,7′-tetrakis(N,N-di-p- methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD) is shown to rise rapidly with higher pore-filling fractions as the dye-coated pore surface is increasingly covered with hole-transporting material. Once a pore-filling fraction of ≈30% is reached, further increases do not significantly change the hole-transfer yield. Using simple models of infiltration of spiro-OMeTAD into the TiO2 porous network, it is shown that this pore-filling fraction is less than the amount required to cover the dye surface with at least a single layer of hole-transporting material, suggesting that charge diffusion through the dye monolayer network precedes transfer to the hole-transporting material. Comparison of these results with device parameters shows that improvements of the power-conversion efficiency beyond ≈30% pore filling are not caused by a higher hole-transfer yield, but by a higher charge-collection efficiency, which is found to occur in steps. The observed sharp onsets in photocurrent and power-conversion efficiencies with increasing pore-filling fraction correlate well with percolation theory, predicting the points of cohesive pathway formation in successive spiro-OMeTAD layers adhered to the pore walls. From percolation theory it is predicted that, for standard mesoporous TiO2 with 20 nm pore size, the photocurrent should show no further improvement beyond an ≈83% pore-filling fraction. Solid-state dye-sensitized solar cells capable of complete hole transfer with pore-filling fractions as low as ∼30% are demonstrated. Improvements of device efficiencies beyond ∼30% are explained by a stepwise increase in charge-collection efficiency in agreement with percolation theory. Furthermore, it is predicted that, for a 20 nm pore size, the photocurrent reaches a maximum at ∼83% pore-filling fraction. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.