Physical modelling of large area 4H-SiC PiN diodes

The recent developments in SiC PiN diode research mean that physics-based models that allow accurate, rapid prediction of switching and conduction performance and resulting converter losses will soon be required. This is especially the case given the potential for very high voltage converters to be used for enabling distributed and renewable power generation. In this work an electro-thermal compact model of a 4.5 kV silicon carbide PiN diode has been developed for converter loss modelling in Simulink. Good matching of reverse recovery has been achieved between 25 and 200 °C. The I-V characteristics of the P+ anode contact have been shown to be significant in obtaining good matching for the forward characteristics of the diode, requiring further modelling work in this area. © 2009 IEEE.

Controllable chemical vapor deposition of large area uniform nanocrystalline graphene directly on silicon dioxide

Metal-catalyst-free chemical vapor deposition (CVD) of large area uniform nanocrystalline graphene on oxidized silicon substrates is demonstrated. The material grows slowly, allowing for thickness control down to monolayer graphene. The as-grown thin films are continuous with no observable pinholes, and are smooth and uniform across whole wafers, as inspected by optical-, scanning electron-, and atomic force microscopy. The sp 2 hybridized carbon structure is confirmed by Raman spectroscopy. Room temperature electrical measurements show ohmic behavior (sheet resistance similar to exfoliated graphene) and up to 13 of electric-field effect. The Hall mobility is ∼40 cm 2/Vs, which is an order of magnitude higher than previously reported values for nanocrystalline graphene. Transmission electron microscopy, Raman spectroscopy, and transport measurements indicate a graphene crystalline domain size ∼10 nm. The absence of transfer to another substrate allows avoidance of wrinkles, holes, and etching residues which are usually detrimental to device performance. This work provides a broader perspective of graphene CVD and shows a viable route toward applications involving transparent electrodes. © 2012 American Institute of Physics.

Direct chemical vapor deposition of large-area carbon thin films on gallium nitride for transparent electrodes: A first attempt

Direct formation of large-area carbon thin films on gallium nitride by chemical vapor deposition without metallic catalysts is demonstrated. A high flow of ammonia is used to stabilize the surface of the GaN (0001)/sapphire substrate during the deposition at 950°C. Various characterization methods verify that the synthesized thin films are largely sp 2 bonded, macroscopically uniform, and electrically conducting. The carbon thin films possess optical transparencies comparable to that of exfoliated graphene. This paper offers a viable route toward the use of carbon-based materials for future transparent electrodes in III-nitride optoelectronics, such as GaN-based light emitting diodes and laser diodes. © 1988-2012 IEEE.

Frame assisted H2O electrolysis induced H2 bubbling transfer of large area graphene grown by chemical vapor deposition on Cu

An improved technique for transferring large area graphene grown by chemical vapor deposition on copper is presented. It is based on mechanical separation of the graphene/copper by H2 bubbles during H2O electrolysis, which only takes a few tens of seconds while leaving the copper cathode intact. A semi-rigid plastic frame in combination with thin polymer layer span on graphene gives a convenient way of handling- and avoiding wrinkles and holes in graphene. Optical and electrical characterizations prove the graphene quality is better than that obtained by traditional wet etching transfer. This technique appears to be highly reproducible and cost efficient. © 2013 American Institute of Physics.

Sources of variability in the free-ball micro-scale abrasion test

In the 'free-ball' version of the micro-scale abrasion or ball-cratering test the rotating ball rests against a tilted sample and a grooved drive shaft. Tests under nominally identical conditions with different apparatus commonly show small but significant differences in measured wear rate. An indirect method has been developed and demonstrated for continuous on-line measurement of the coefficient of friction in the free-ball test. Experimental investigation of the effects of sample tilt angle and drive shaft groove width shows that both these factors influence the stability of the rotation of the ball, and the shape of the abrasive slurry pool, which in turn affect the coefficient of friction in the wear scar area and the measured wear rate. It is suggested that in order to improve the reproducibility of this method the geometry of the apparatus should be specified. For the apparatus used in this work with a steel ball of 25 mm diameter, a sample tilt angle of 60-75° and a shaft groove width of about 10mm provided the most stable ball motion and a wear rate which showed least variability. © 2004 Elsevier B.V. All rights reserved.

Electron emission from arrays of carbon nanotubes/fibres

The overall aim of this work is to produce arrays of field emitting microguns, based on carbon nanotubes, which can be utilised in the manufacture of large area field emitting displays, parallel e-beam lithography systems and electron sources for high frequency amplifiers. This paper will describe the work carried out to produce patterned arrays of aligned multiwall carbon nanotubes (MWCNTs) using a dc plasma technique and a Ni catalyst. We will discuss how the density of the carbon nanotube/fibres can be varied by reducing the deposition yield through nickel interaction with a diffusion layer or by direct lithographic patterning of the Ni catalyst to precisely define the position of each nanotube/fibre. Details of the field emission behaviour of the different arrays of MWCNTS will also be presented. © 2002 Published by Elsevier Science B.V.