Correlation between density of states distributions and the fermi level position in interfacial regions of amorphous silicon thin film transistors

This paper investigates the variation of the integrated density of states with conduction activation energy in hydrogenated amorphous silicon thin film transistors. Results are given for two different gate insulator layers, PECVD silicon oxide and thermally grown silicon dioxide. The different gate insulators produce transistors with very different initial transfer characteristics, but the variation of integrated density of states with conduction activation energy is shown to be similar.

Distribution of critical current density in large YBa2Cu3O7-δ grains fabricated using seeded peritectic solidification

High quality large grain high Tc superconducting ceramics offer enormous potential as 'permanent' magnets and in magnetic screening applications at 77K. This requires sample dimensions -cm with uniform high critical current densities of the order 105 A/cm2 in applied magnetic fields of IT. We report a study of the magnetic characterisation of a typical large YBa2Cu3O7-δ grain, prepared by seeded peritectic solidification, and correlate the magnetically determined critical current density, Jc, with microstuctural features from different regions of the bulk sample. From this data we extract the temperature, field and positional dependence of the critical current density of the samples and the irreversibility line. We find that whilst the bulk sample exhibits a good Jc of order 104 A/cm2 (77K, 1T), the local Jc is strongly correlated with the sample microstructure towards the edge of the sample and more severely at the centre of the sample by the presence of SmBa2Cu3O7-δ seed crystal. © 1997 IEEE.