132 resultados para spatial segregation
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We explore collective behavior in biological systems using a cooperative control framework. In particular, we study a hysteresis phenomenon in which a collective switches from circular to parallel motion under slow variation of the neighborhood size in which individuals tend to align with one another. In the case that the neighborhood radius is less than the circular motion radius, both circular and parallel motion can occur. We provide Lyapunov-based analysis of bistability of circular and parallel motion in a closed-loop system of self-propelled particles with coupled-oscillator dynamics. ©2007 IEEE.
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The Spatial Light Modulator in a mode demultiplexer is used to measure the aberrations of the system in which it is installed before applying aberration correction to improve the insertion loss and modal extinction ratios. © 2013 OSA.
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The Spatial Light Modulator in a mode demultiplexer is used to measure the aberrations of the system in which it is installed before applying aberration correction to improve the insertion loss and modal extinction ratios. © 2013 OSA.
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The Spatial Light Modulator in a mode demultiplexer is used to measure the aberrations of the system in which it is installed before applying aberration correction to improve the insertion loss and modal extinction ratios. © 2013 OSA.
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We demonstrate the design, fabrication and experimental characterization of the spatial mode selector that transmit only the second silicon waveguide mode. Nanofabrication results and near field measurements are presented. ©2009 Optical Society of America.
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We demonstrate the design, fabrication and experimental characterization of the spatial mode selector that transmit only the second silicon waveguide mode. Nanofabrication results and near field measurements are presented. © 2009 Optical Society of America.
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We demonstrate the design, fabrication and experimental characterization of the spatial mode selector that transmit only the second silicon waveguide mode. Nanofabrication results and near field measurements are presented. © 2009 Optical Society of America.
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We demonstrate the design, fabrication and experimental characterization of the spatial mode selector that transmit only the second silicon waveguide mode. Nanofabrication results and near field measurements are presented. © 2009 Optical Society of America.
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An iterative, self-correcting system for doing modal control using adaptive optics in a 50μm core diameter multimode fiber (MMF) is designed. It is shown experimentally to reduce the number of modes generated by 300%. © 2006 Optical Society of America.
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An iterative, self-correcting system for doing modal control using adaptive optics in a 50μm core diameter multimode fiber (MMF) is designed. It is shown experimentally to reduce the number of modes generated by 300%. © 2006 Optical Society of America.
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A model of the graphene growth mechanism of chemical vapor deposition on platinum is proposed and verified by experiments. Surface catalysis and carbon segregation occur, respectively, at high and low temperatures in the process, representing the so-called balance and segregation regimes. Catalysis leads to self-limiting formation of large area monolayer graphene, whereas segregation results in multilayers, which evidently "grow from below." By controlling kinetic factors, dominantly monolayer graphene whose high quality has been confirmed by quantum Hall measurement can be deposited on platinum with hydrogen-rich environment, quench cooling, tiny but continuous methane flow and about 1000°C growth temperature. © 2014 AIP Publishing LLC.
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In microelectronics, the increase in complexity and the reduction of devices dimensions make essential the development of new characterization tools and methodologies. Indeed advanced characterization methods with very high spatial resolution are needed to analyze the redistribution at the nanoscale in devices and interconnections. The atom probe tomography has become an essential analysis to study materials at the nanometer scale. This instrument is the only analytical microscope capable to produce 3D maps of the distribution of the chemical species with an atomic resolution inside a material. This technique has benefit from several instrumental improvements during last years. In particular, the use of laser for the analysis of semiconductors and insulating materials offers new perspectives for characterization. The capability of APT to map out elements at the atomic scale with high sensitivity in devices meets the characterization requirements of semiconductor devices such as the determination of elemental distributions for each device region. In this paper, several examples will show how APT can be used to characterize and understand materials and process for advanced metallization. The possibilities and performances of APT (chemical analysis of all the elements, atomic resolution, planes determination, crystallographic information...) will be described as well as some of its limitations (sample preparation, complex evaporation, detection limit, ...). The examples illustrate different aspect of metallization: dopant profiling and clustering, metallic impurities segregation on dislocation, silicide formation and alloying, high K/metal gate optimization, SiGe quantum dots, as well as analysis of transistors and nanowires. © 2013 Elsevier B.V. All rights reserved.
