Low temperature (< 100 °c) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy

With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p-n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu2O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu2O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu2O films are reported. It is known from previously published work that the formation of pure Cu2O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu2O thin films (as opposed to CuO or mixed phase CuO/Cu2O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu2O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a controlled amount of oxygen, can produce good quality p-type transparent Cu2O films with electrical resistivity ranging from 102 to 104 Ω-cm, hole mobility of 1-10 cm2/V-s, and optical band-gap of 2.0-2.6 eV. These material properties make this low temperature deposited HiTUS Cu 2O film suitable for fabrication of p-type metal oxide thin film transistors. Furthermore, the capability to deposit Cu2O films with low film stress at low temperatures on plastic substrates renders this approach favourable for fabrication of flexible p-n junction solar cells. © 2011 Elsevier B.V. All rights reserved.

Deconvolution and elastography based on dimensional ultrasound

This paper is in two parts and addresses two of getting more information out of the RF signal from three-dimensional (3D) mechanically-swept medical ultrasound . The first topic is the use of non-blind deconvolution improve the clarity of the data, particularly in the direction to the individual B-scans. The second topic is imaging. We present a robust and efficient approach to estimation and display of axial strain information. deconvolution, we calculate an estimate of the point-spread at each depth in the image using Field II. This is used as of an Expectation Maximisation (EM) framework in which ultrasound scatterer field is modelled as the product of (a) a smooth function and (b) a fine-grain varying function. the E step, a Wiener filter is used to estimate the scatterer based on an assumed piecewise smooth component. In the M , wavelet de-noising is used to estimate the piecewise smooth from the scatterer field. strain imaging, we use a quasi-static approach with efficient based algorithms. Our contributions lie in robust and 3D displacement tracking, point-wise quality-weighted , and a stable display that shows not only strain but an indication of the quality of the data at each point in the . This enables clinicians to see where the strain estimate is and where it is mostly noise. deconvolution, we present in-vivo images and simulations quantitative performance measures. With the blurred 3D taken as OdB, we get an improvement in signal to noise ratio 4.6dB with a Wiener filter alone, 4.36dB with the ForWaRD and S.18dB with our EM algorithm. For strain imaging show images based on 2D and 3D data and describe how full D analysis can be performed in about 20 seconds on a typical . We will also present initial results of our clinical study to explore the applications of our system in our local hospital. © 2008 IEEE.

Performance of thin film carbon materials and carbon nanotubes as cold cathodes

The field emissions from three different types of carbon films are studied using a Kiethly voltage-current source-measure unit under computer control. The three types of carbon films are : 1) a-C:H:N deposited using an inductively coupled rf PECVD process, where the N content in the films can be as high as 30 at %; 2) cathodic arc deposited tetrahedral amorphous carbon with embedded regions of carbon nanotube and anion structures and 3) unoriented carbon nanotube films on a porous substrate. The films are formed by filtering a solution of nanotubes dispersed in alcohol through the pores and drying.

The practical feasibility of using RFID in a metal environment

Passive Radio Frequency Identification (RFID) has revolutionized the way in which products are identified. This paper considers the effect of metals on the performance of RFID at ultra high frequency (UHF). The paper establishes read patterns in space, highlighting the interference of RF waves due to three different metals, one ferrous and the other two non ferrous, when placed behind a transponder. The effect of thickness of the metal plate is also examined. Different metals have been found to have different interference effects although there are some similarities in their read patterns related to their material properties. Also experiments have been carried out to identify and establish various methods of improving this performance. Finally, differences between performance-measuring parameters, namely attenuating transmitted power and calculating read rate at a fixed attenuation are established and possible reasons of these observations are presented. © 2007 IEEE.