178 resultados para implant stress


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The successful utilization of an array of silicon on insulator complementary metal oxide semiconductor (SOICMOS) micro thermal shear stress sensors for flow measurements at macro-scale is demonstrated. The sensors use CMOS aluminum metallization as the sensing material and are embedded in low thermal conductivity silicon oxide membranes. They have been fabricated using a commercial 1 μm SOI-CMOS process and a post-CMOS DRIE back etch. The sensors with two different sizes were evaluated. The small sensors (18.5 ×18.5 μm2 sensing area on 266 × 266 μm2 oxide membrane) have an ultra low power (100 °C temperature rise at 6mW) and a small time constant of only 5.46 μs which corresponds to a cut-off frequency of 122 kHz. The large sensors (130 × 130 μm2 sensing area on 500 × 500 μm2 membrane) have a time constant of 9.82 μs (cut-off frequency of 67.9 kHz). The sensors' performance has proven to be robust under transonic and supersonic flow conditions. Also, they have successfully identified laminar, separated, transitional and turbulent boundary layers in a low speed flow. © 2008 IEEE.

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At medium to high frequencies the dynamic response of a built-up engineering system, such as an automobile, can be sensitive to small random manufacturing imperfections. Ideally the statistics of the system response in the presence of these uncertainties should be computed at the design stage, but in practice this is an extremely difficult task. In this paper a brief review of the methods available for the analysis of systems with uncertainty is presented, and attention is then focused on two particular "non- parametric" methods: statistical energy analysis (SEA), and the hybrid method. The main governing equations are presented, and a number of example applications are considered, ranging from academic benchmark studies to industrial design studies. © 2009 IOP Publishing Ltd.