High-frequency acousto-electric single-photon source

We propose a single optical photon source for quantum cryptography based on the acoustoelectric effect. Surface acoustic waves (SAWs) propagating through a quasi-one-dimensional channel have been shown to produce packets of electrons that reside in the SAW minima and travel at the velocity of sound. In our scheme, the electron packets are injected into a p-type region, resulting in photon emission. Since the number of electrons in each packet can be controlled down to a single electron, a stream of single- (or N-) photon states, with a creation time strongly correlated with the driving acoustic field, should be generated. ©2000 The American Physical Society.

Fabrication of an organic field effect transistor using nano imprinting of Ag inks and semiconducting polymers

A simple and cheap procedure for flexible electronics fabrication was demonstrated by imprinting metallic nanoparticles (NPs) on flexible substrates. Silver NPs with an average diameter of 10 nm were prepared via an improved chemical approach and Ag Np ink was produced in α-terpineol with a concentration up to 15%. Silver micro/nanostructures with a dimension varying from nanometres to microns were produced on a flexible substrate (polyimide) by imprinting the as-prepared silver ink. The fine fluidic properties of an Ag NP/α-terpineol solution and low melting temperatures of silver nanoparticles render a low pressure and low temperature procedure, which is well suited for flexible electronics fabrication. The effects of sintering and mechanical bending on the conductivity of imprinted silver contacts were also investigated. Large area organic field effect transistors (OFET) on flexible substrates were fabricated using an imprinted silver electrode and semiconducting polymer. The OFET with silver electrodes imprinted from our prepared oleic acid stabilized Ag nanoparticle ink show an ideal ohmic contact; therefore, the OFET exhibit high performance (Ion/Ioff ratio: 1 × 103; mobility: 0.071 cm2 V-1 s-1). © 2010 IOP Publishing Ltd.

Low temperature (< 100 °c) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy

With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p-n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu2O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu2O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu2O films are reported. It is known from previously published work that the formation of pure Cu2O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu2O thin films (as opposed to CuO or mixed phase CuO/Cu2O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu2O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a controlled amount of oxygen, can produce good quality p-type transparent Cu2O films with electrical resistivity ranging from 102 to 104 Ω-cm, hole mobility of 1-10 cm2/V-s, and optical band-gap of 2.0-2.6 eV. These material properties make this low temperature deposited HiTUS Cu 2O film suitable for fabrication of p-type metal oxide thin film transistors. Furthermore, the capability to deposit Cu2O films with low film stress at low temperatures on plastic substrates renders this approach favourable for fabrication of flexible p-n junction solar cells. © 2011 Elsevier B.V. All rights reserved.

Effect of gate dielectric scaling in nanometer scale vertical thin film transistors

A short channel vertical thin film transistor (VTFT) with 30 nm SiN x gate dielectric is reported for low voltage, high-resolution active matrix applications. The device demonstrates an ON/OFF current ratio as high as 10 9, leakage current in the fA range, and a sub-threshold slope steeper than 0.23 V/dec exhibiting a marked improvement with scaling of the gate dielectric thickness. © 2011 American Institute of Physics.

Soft-lithographic processed soluble micropatterns of reduced graphene oxide for wafer-scale thin film transistors and gas sensors

PDMS based imprinting is firstly developed for patterning of rGO on a large area. High quality stripe and square shaped rGO patterns are obtained and the electrical properties of the rGO film can be adjusted by the concentration of GO suspension. The arrays of rGO electronics are fabricated from the patterned film by a simple shadow mask method. Gas sensors, which are based on these rGO electronics, show high sensitivity and recyclable usage in sensing NH 3. © 2012 The Royal Society of Chemistry.

High-efficiency InGaN/GaN quantum well structures on large area silicon substrates

The growth techniques which have enabled the realization of InGaN-based multi-quantum-well (MQW) structures with high internal quantum efficiencies (IQE) on 150mm (6-in.) silicon substrates are reviewed. InGaN/GaN MQWs are deposited onto GaN templates on large-area (111) silicon substrates, using AlGaN strain-mediating interlayers to inhibit thermal-induced cracking and wafer-bowing, and using a SiN x interlayer to reduce threading dislocation densities in the active region of the MQW structure. MQWs with high IQE approaching 60% have been demonstrated. Atomic resolution electron microscopy and EELS analysis have been used to study the nature of the important interface between the Si(111) substrate and the AlN nucleation layer. We demonstrate an amorphous SiN x interlayer at the interface about 2nm wide, which does not, however, prevent good epitaxy of the AlN on the Si(111) substrate. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Energy recovery from high-frequency clocks using DC-DC converters

Large digital chips use a significant amount of energy to distribute a multi-GHz clock. By discharging the clock network to ground every cycle, the energy stored in this large capacitor is wasted. Instead, the energy can be recovered using an on-chip DC-DC converter. This paper investigates the integration of two DC-DC converter topologies, boost and buck-boost, with a high-speed clock driver. The high operating frequency significantly shrinks the required size of the L and C components so they can be placed on-chip; typical converters place them off-chip. The clock driver and DC-DC converter are able to share the entire tapered buffer chain, including the widest drive transistors in the final stage. To achieve voltage regulation, the clock duty cycle must be modulated; implying only single-edge-triggered flops should be used. However, this minor drawback is eclipsed by the benefits: by recovering energy from the clock, the output power can actually exceed the additional power needed to operate the converter circuitry, resulting in an effective efficiency greater than 100%. Furthermore, the converter output can be used to operate additional power-saving features like low-voltage islands or body bias voltages. ©2008 IEEE.

High velocity vortex channeling in vicinal YBCO thin films

We report on electrical transport measurements at high current densities on optimally doped YBa 2Cu 3O 7-δ thin films grown on vicinal SrTiO 3 substrates. Data were collected by using a pulsed-current technique in a four-probe arrangement, allowing to extend the current-voltage characteristics to high supercritical current densities (up to 24 MA cm -2) and high electric fields (more than 20 V/cm), in the superconducting state at temperatures between 30 and 80 K. The electric measurements were performed on tracks perpendicular to the vicinal step direction, such that the current crossed between ab planes, under magnetic field rotated in the plane defined by the crystallographic c axis and the current density. At magnetic field orientation parallel to the cuprate layers, evidence for the sliding motion along the ab planes (vortex channeling) was found. The signature of vortex channeling appeared to get enhanced with increasing electric field, due to the peculiar depinning features in the kinked vortex range. They give rise to a current-voltage characteristics steeper than in the more off-plane rectilinear vortex orientations, in the electric field range below approximately 1 V/cm. Roughly above this value, the high vortex channeling velocities (up to 8.6 km/s) could be ascribed to the flux flow, although the signature of ohmic transport appeared to be altered by unavoidable macroscopic self-heating and hot-electron-like effects. © 2012 Elsevier B.V. All rights reserved.

Hot electron field emission via individually transistor-ballasted carbon nanotube arrays.

We present electronically controlled field emission characteristics of arrays of individually ballasted carbon nanotubes synthesized by plasma-enhanced chemical vapor deposition on silicon-on-insulator substrates. By adjusting the source-drain potential we have demonstrated the ability to controllable limit the emission current density by more than 1 order of magnitude. Dynamic control over both the turn-on electric field and field enhancement factor have been noted. A hot electron model is presented. The ballasted nanotubes are populated with hot electrons due to the highly crystalline Si channel and the high local electric field at the nanotube base. This positively shifts the Fermi level and results in a broad energy distribution about this mean, compared to the narrow spread, lower energy thermalized electron population in standard metallic emitters. The proposed vertically aligned carbon nanotube field-emitting electron source offers a viable platform for X-ray emitters and displays applications that require accurate and highly stable control over the emission characteristics.

Trench insulated gate bipolar transistor - a high power switching device

This paper presents a comprehensive theoretical study of the Trench Insulated Gate Bipolar Transistors (TIGBT). Specific physical and geometrical effects, such as the accumulation layer injection, increased channel density, increased channel charge and transversal electric field modulation are discussed. The potential advantages of the Trench IGBT over its conventional planar variant are highlighted. It is concluded that the Trench IGBT is one of the most promising structures in the area of high voltage MOS-controllable switching devices.

Light-bias induced instability and persistent photoconductivity in In-Zn-O/Ga-In-Zn-O thin film transistors

Stress/recovery measurements demonstrate that even high-performance passivated In-Zn-O/ Ga-In-Zn-O thin film transistors with excellent in-dark stability suffer from light-bias induced threshold voltage shift (ΔV T) and defect density changes. Visible light stress leads to ionisation of oxygen vacancy sites, causing persistent photoconductivity. This makes the material act as though it was n-doped, always causing a negative threshold voltage shift under strong illumination, regardless of the magnitude and polarity of the gate bias.

Electron spin resonance signature of the oxygen vacancy in HfO 2

The oxygen vacancy has been inferred to be the critical defect in HfO 2, responsible for charge trapping, gate threshold voltage instability, and Fermi level pinning for high work function gates, but it has never been conclusively identified. Here, the electron spin resonance g tensor parameters of the oxygen vacancy are calculated, using methods that do not over-estimate the delocalization of the defect wave function, to be g xx = 1.918, g yy = 1.926, g zz = 1.944, and are consistent with an observed spectrum. The defect undergoes a symmetry lowering polaron distortion to be localized mainly on a single adjacent Hf ion. © 2012 American Institute of Physics.

Carbon nanostructure-based field-effect transistors for label-free chemical/biological sensors.

Over the past decade, electrical detection of chemical and biological species using novel nanostructure-based devices has attracted significant attention for chemical, genomics, biomedical diagnostics, and drug discovery applications. The use of nanostructured devices in chemical/biological sensors in place of conventional sensing technologies has advantages of high sensitivity, low decreased energy consumption and potentially highly miniaturized integration. Owing to their particular structure, excellent electrical properties and high chemical stability, carbon nanotube and graphene based electrical devices have been widely developed for high performance label-free chemical/biological sensors. Here, we review the latest developments of carbon nanostructure-based transistor sensors in ultrasensitive detection of chemical/biological entities, such as poisonous gases, nucleic acids, proteins and cells.