Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

It is widely reported that threshold voltage and on-state current of amorphous indium-gallium-zinc-oxide bottom-gate thin-film transistors are strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation. © 2013 AIP Publishing LLC.

Superradiant emission in semiconductor diode laser structures

This paper reviews recent advances in superradiant (SR) emission in semiconductors at room temperature, a process which has been shown to enable the generation on demand of high power picosecond or subpicosecond pulses across a range of different wavelengths. The different characteristic features of SR emission from semiconductor devices with bulk, quantum-well, and quantum-dot active regions are outlined, and particular emphasis is placed on comparing the characteristic features of SR with those of lasing. Finally, potential applications of SR pulses are discussed. © 1995-2012 IEEE.

Free space communications with beam steering a two-electrode tapered laser diode using liquid-crystal slm

A free space optical wireless communication system with 3 degree angular coverage and 1.25 GHz modulation bandwidth is reported, in which relatively narrow laser beam of a simultaneous high power, high modulation speed and ultra high modulation efficiency directly modulated two-electrode tapered laser diode is steered using a nematic phase-only Liquid-Crystal On Silicon Spatial Light Modulator (LCOS SLM) by displaying reconfigurable 256 phase level gratings. © 1983-2012 IEEE.

Hybrid and passive mode-locking of a monolithic two-section MQW InGaN/GaN laser diode

We report the first hybrid mode-locking of a monolithic two-section multiple quantum well InGaN based laser diode. This device, with a length of 1.5 mm, has a 50-μm-long absorber section located at the back facet and generates a continuous stable 28.6 GHz pulse train with an average output power of 9.4 mW at an emission wavelength of 422 nm. Under hybrid mode-locking, the pulse width reduces to 4 ps, the peak power increases to 72 mW, and the microwave linewidth reduces by 13 dB to <500 kHz. We also observe the passive mode-locking with pulse width and peak power of 8 ps and 37 mW, respectively. © 1989-2012 IEEE.

Ultrafast Diode Lasers

List of major symbols.

High power, low-jitter encoded picosecond pulse generation using an rf-locked self-q-switched multicontact GaAs/GaAlAs diode laser

The RF locking of a self-Q-switching diode laser is shown to reduce the jitter of a 2.48 GHz train of 1 W peak power picosecond pulses to less than 300 fs. By using direct modulation of the loss in the Q-switched laser, direct encoding of data has been achieved at rates in excess of 2 Gbit/s.

Ultrashort pulse generation in diode lasers

The basic ideas and current state of the art of ultrashort pulse generation by injection lasers are reviewed. All developed techniques, including gain switching, Q-switching, and mode-locking are described and compared. A simple theoretical treatment of a diode laser which emits picosecond light pulses is discussed. Some fundamental limits of the pulse parameters are discussed. Finally, compression of chirped optical pulses by optical fibres and the soliton effect is considered. © 1992 Chapman & Hall.

Mid-infrared Raman-soliton continuum pumped by a nanotube-mode-locked sub-picosecond Tmdoped MOPFA

We demonstrate a mid-infrared Raman-soliton continuum extending from 1.9 to 3 μm in a highly germanium-doped silica-clad fiber, pumped by a nanotube mode-locked thulium-doped fiber system, delivering 12 kW sub-picosecond pulses at 1.95 μm. This simple and robust source of light covers a portion of the atmospheric transmission window. © 2013 Optical Society of America.

Passive and hybrid mode-locking from a monolithic InGaN/GaN laser diode

We report 4ps and 8ps pulse generation from a two-section monolithic InGaN/GaN laser by hybrid and passive mode-locking, respectively. Pulse trains at a repetition rate of 28.6GHz and an emission wavelength of 422nm are generated. © 2013 The Optical Society.

Aerodynamic design of high end wall angle turbine stages-part I: Methodology development

A design methodology is presented for turbines in an annulus with high end wall angles. Such stages occur where large radial offsets between the stage inlet and stage outlet are required, for example in the first stage of modern low pressure turbines, and are becoming more prevalent as bypass ratios increase. The turbine vanes operate within s-shaped ducts which result in meridional curvature being of a similar magnitude to the bladeto-blade curvature. Through a systematic series of idealized computational cases, the importance of two aspects of vane design are shown. First, the region of peak end wall meridional curvature is best located within the vane row. Second, the vane should be leant so as to minimize spanwise variations in surface pressure-this condition is termed "ideal lean." This design philosophy is applied to the first stage of a low pressure turbine with high end wall angles. © 2014 by ASME.

Aerodynamic design of high end wall angle turbine stages- part II: Experimental verification

An experimental investigation of a turbine stage featuring very high end wall angles is presented. The initial turbine design did not achieve a satisfactory performance and the difference between the design predictions and the test results was traced to a large separated region on the rear suction-surface. To improve the agreement between computational fluid dynamics (CFD) and experiment, it was found necessary to modify the turbulence modeling employed. The modified CFD code was then used to redesign the vane, and the changes made are described. When tested, the performance of the redesigned vane was found to have much closer agreement with the predictions than the initial vane. Finally, the flowfield and performance of the redesigned stage are compared to a similar turbine, designed to perform the same duty, which lies in an annulus of moderate end wall angles. A reduction in stage efficiency of at least 2.4% was estimated for the very high end wall angle design. © 2014 by ASME.

The front-end of eco-innovation for eco-innovative small and medium sized companies

This paper studies the Front End of Eco-Innovation (FEEI), the initial phase of the eco-innovation process. Incorporating environmental concerns at the front-end of innovation is important, as product parameters are still flexible. This paper investigates the FEEI for 42 small and medium sized eco-innovators in the Netherlands by using a survey. The results show that SMEs embrace informal, systematic, and open innovation approaches at the FEEI. Teams appear to be multidisciplinary, and creativity and environmental knowledge are essential. Experimentation played a significant role at the FEEI. The paper concludes with recommendations for future research and implications for managers. © 2013 Elsevier B.V.

Local lifetime engineering in 600V pin diode using mix-mode simulation

This paper reports a detailed analysis of the effect of local lifetime killing (LLK) within the drift region on the reverse recovery (RR) characteristics and on-state performance of 600V Silicon PiN diodes. The paper also discusses the influence of the measurement circuit on the reverse recovery of the high voltage diodes and it proposes a simple and effective mix-mode simulation tool for an accurate assessment of the diode performance in reverse recovery mode. © 2013 IEEE.