Experimental investigation into parameters governing corner interactions for transonic shock wave/ boundary layer interactions

Experiments were conducted investigating the interaction between a normal shock wave and a corner boundary layer in a constant area rectangular duct. Active corner suction and passive blowing were applied to manipulate the natural corner flows developing in the working section of the Cambridge University supersonic wind tunnel. In addition robust vane micro-vortex generators were applied to the corners of the working section. Experiments were conducted at Mach numbers of M∞=1.4 and 1.5. Flow visualisation was carried out through schlieren and surface oil flow, while static pressures were recorded via floor tappings. The results indicate that an interplay occurs between the corner flow and the centre line flow. It is believed that corner flow separation acts to induce a shock bifurcation, which in turn leads to a smearing of the adverse pressure gradient elsewhere. In addition the blockage effect from the corners was seen to result in a reacceleration of the subsonic post-shock flow. As a result manipulation of the corner regions allows a separated or attached centre line flow to be observed at the same Mach number. Copyright © 2010 by Babinsky, Burton, Bruce.

Microvortex generators applied to flowfield containing a normal shock wave and diffuser

The flow through a terminating shock wave and the subsequent subsonic diffuser typically found in supersonic inlets has been simulated using a small-scale wind tunnel. Experiments have been conducted at an inflow Mach number of 1.4 using a dual-channel working section to produce a steady near-normal shock wave. The setup was designed so that the location of the shock wave could be varied relative to the diffuser. As the near-normal shock wave was moved downstream and into the diffuser, an increasingly distorted, three-dimensional, and separated flow was observed. Compared with the interaction of a normal shock wave in a constant area duct, the addition of the diffuser resulted in more prominent corner interactions. Microvortex generators were added to determine their potential for removing flow separation. Although these devices were found to reduce the extent of separation, they significantly increased three-dimensionality and even led to a large degree of flow asymmetry in some configurations. Copyright © 2011 by Neil Titchener and Holger Babinsky.

Study on the critical submergence of surface vortices and the design of anti-vortex intakes

Surface vortex behavior in front of the tunnel intake was investigated in this paper. The critical submergence of vortex was discussed based on the concept of 'critical spherical sink surface' (CSSS). The vortex formation and evolution at the tunnel intake were analyzed based on the theory of CSSS considering the effect of circulation. A theory was proposed to explain the surface vortex. The theoretical development was verified by the physical model experiments of Xiluodu hydropower station. The radial velocity and vortex circulation were considered as the main factors that influence the formation and evolution of surface vortex. Finally, an anti-vortex intake configuration was proposed to weaken the air-core vortex in front of the tunnel intakes of the hydraulic structures. © 2011 Science China Press and Springer-Verlag Berlin Heidelberg.

Methods of patterning magnetic fields using bulk superconductors

High Temperature superconductors are able to carry very high current densities, and thereby sustain very high magnetic fields. There are many projects which use the first property and these have concentrated on power generation, transmission and utilization, however there are relatively few which are currently exploiting the ability to sustain high magnetic fields. There are two main reasons for this: high field wound magnets can and have been made from both BSCCO and YBCO but currently their cost is much higher than the alternative provided by low Tc materials such as Nb3Sn and NbTi. An alternative form of the material is the bulk form which can be magnetized to high fields and using flux pumping this can be done in situ. This paper explores some of the applications of bulk superconductors and describes methods of producing field patterns using the highly uniform magnetic fields required for MRI and accelerator magnets as the frame of reference. The patterns are not limited to uniform fields and it is entirely possible to produce a field varying sinusoidally in space such as would be required for a motor or a generator. The scheme described in this paper describes a dipole magnet such as is found in an accelerator magnet. The tunnel is 30 × 50 × 1000 mm and we achieve a uniformity of better than 200 ppm over the 1000 mm length and better than 1 ppm over the central 500 mm region. The paper presents results for both the overall uniformity and the integrated uniformity which is 302 ppm over the 1000 mm length. © 2010 IEEE.

Magnetization process of a single chain of nanomagnets

We have investigated the magnetization reversal process of a single chain of identical nanomagnetic dots fabricated from 30 nm thick Ni 80Fe20. The structures consist of two 5 μm wide support wires bridged with a single chain of identical dots of diameter δ in the range 100-250 nm. For fields applied perpendicular to the single chain, we observed an unusual size dependent hysteretic behavior in the magnetoresistance curve at high field. This is due to the magnetostatic interaction arising from the proximity of the magnetic charges. We are able to deduce from a simple micromagnetic simulation that the reversal process in the chain of dots with δ=100nm is mediated by a collective process of nearly coherent spin rotation. The magnetotransport measurements along the chain reveal a complex magnetization reversal process in the chain of nanomagnets. © 2002 American Institute of Physics.

Modelling of long-term ground response to tunnelling under St James's Park, London

Following a tunnel excavation in low-permeability soil, it is commonly observed that the ground surface continues to settle and ground loading on the tunnel lining changes, as the pore pressures in the ground approach a new equilibrium condition. The monitored ground response following the tunnelling under St James's Park, London, shows that the mechanism of subsurface deformation is composed of three different zones: swelling, consolidation and rigid body movement. The swelling took place in a confined zone above the tunnel crown, extending vertically to approximately 5 m above it. On the sides of the tunnel, the consolidation of the soil occurred in the zone primarily within the tunnel horizon, from the shoulder to just beneath the invert, and extending laterally to a large offset from the tunnel centreline. Above these swelling and consolidation zones the soil moved downward as a rigid body. In this study, soil-fluid coupled three-dimensional finite element analyses were performed to simulate the mechanism of long-term ground response monitored at St James's Park. An advanced critical state soil model, which can simulate the behaviour of London Clay in both drained and undrained conditions, was adopted for the analyses. The analysis results are discussed and compared with the field monitoring data. It is found that the observed mechanism of long-term subsurface ground and tunnel lining response at St James's Park can be simulated accurately only when stiffness anisotropy, the variation of permeability between different units within the London Clay and non-uniform drainage conditions for the tunnel lining are considered. This has important implications for future prediction of the long-term behaviour of tunnels in clays.

Angular dependence of domain wall resistivity in artificial magnetic domain structures.

We exploit the ability to precisely control the magnetic domain structure of perpendicularly magnetized Pt/Co/Pt trilayers to fabricate artificial domain wall arrays and study their transport properties. The scaling behavior of this model system confirms the intrinsic domain wall origin of the magnetoresistance, and systematic studies using domains patterned at various angles to the current flow are excellently described by an angular-dependent resistivity tensor containing perpendicular and parallel domain wall resistivities. We find that the latter are fully consistent with Levy-Zhang theory, which allows us to estimate the ratio of minority to majority spin carrier resistivities, rho downward arrow/rho upward arrow approximately 5.5, in good agreement with thin film band structure calculations.

Theoretical investigation of CoSi2/Si1-xGex detectors: Influence of a Si tunneling barrier on the electro-optical characteristics

We present a theoretical investigation of the influence of a non-reacted Si layer on the transport and optical properties of CoSi2/Si1-xGex Schottky barrier diodes grown from Co/Si/Si1-xGex systems. The presence of this layer reduces the effect of the lowering of the Schottky barrier height which would be expected in a CoSi2/Si1-xGex. However, due to the small thickness of this Si layer, the charge carriers are able to tunnel through it. This tunneling process allows for a significant lowering of the Schottky barrier height and therefore an extension of the detection regime into the infrared. © 1996 American Institute of Physics.

The response of buildings to tunnelling: A case study

A case study of the response of two buildings to the construction of a 12 m diameter tunnel excavated by conventional method, in Italy, is studied. The 12 m diameter tunnel was constructed carrying out reinforcement of the tunnel face and around the crown prior to excavation and installation of the temporary sprayed concrete lining and the permanent reinforced concrete lining. Reflective prisms, placed at first floor level around the perimeter of the building facades, allowed building settlements to be measured. Ground settlements between the two buildings were measured using BRE type settlement studs. Extensive protective measures were adopted to maintain stability of the tunnel excavation and to reduce ground movements. The number of horizontal jet grout columns installed into the tunnel face was reduced over the course of the project. Results from CPT tests indicate that the undrained shear strength at the tunnel axis is around 120 kPa. SPT and undrained unconsolidated (UU) triaxial tests indicate lower strengths of around 80 kPa, although this may be due to sample disturbance.

Corner effect and asymmetry in transonic channel flows

An experimental and numerical investigation into transonic shock/boundary-layer interactions in rectangular ducts has been performed. Experiments have shown that flow development in the corners of transonic shock/boundary-layer interactions in confined channels can have a significant impact on the entire flowfield. As shock strength is increased from M∞ = 1:3 to 1.5, the flowfield becomes very slightly asymmetrical. The interaction of corner flows with one another is thought to be a potential cause of this asymmetry. Thus, factors that govern the size of corner interactions (such as interaction strength) and their proximity to one another (such as tunnel aspect ratio) can affect flow symmetry. The results of the computational study show reasonable agreement with experiments, although simulations with particular turbulence models predict highly asymmetrical solutions for flows that were predominantly symmetrical in experiments. These discrepancies are attributed to the tendency of numerical schemes to overprediction corner-interaction size, and this also accounts for why computational fluid dynamics predicts the onset of asymmetry at lower shock strengths than in experiments. The findings of this study highlight the importance of making informed decisions about imposing artificial constraints on symmetry and boundary conditions for internal transonic flows. Future effort into modeling corner flows accurately is required. Copyright © 2011 by the American Institute of Aeronautics and Astronautics, Inc. All rights reserved.

Pipe in Pipe PiP

PiP software is a powerful computational tool for calculating vibration from underground railways and for assessing the performance of vibration countermeasures. The software has a user-friendly interface and it uses the state-of-the-art techniques to perform quick calculations for the problem. The software employs a model of a slab track coupled to a circular tunnel embedded in the ground. The software calculates the Power Spectral Density (PSD) of the vertical displacement at any selected point in the soil. Excitation is assumed to be due to an infinitely-long train moving on a slab-track supported at the tunnel bed. The PSD is calculated for a roughness excitation of a unit value (i.e. "white noise"). The software also calculates the Insertion Gain (IG) which is the ratio between the PSD displacement after and before changing parameters of the track, tunnel or soil. Version 4 of the software accounts for important developments of the numerical model. The tunnel wall is modelled as a thick shell (using the elastic continuum theory) rather than a thin shell. More importantly, the numerical model accounts now for a tunnel embedded in a half space rather than a full space as done in the previous versions. The software can now be used to calculate vibration due to a number of typical PSD roughnesses for rails in good, average and bad conditions.

Thickness control of Molecular Beam Epitaxy grown layers at the 0.01-0.1 monolayer level

Electron tunnelling through semiconductor tunnel barriers is exponentially sensitive to the thickness of the barrier layer, and in the most common system, the AlAs tunnel barrier in GaAs, a one monolayer variation in thickness results in a 300% variation in the tunnelling current for a fixed bias voltage. We use this degree of sensitivity to demonstrate that the level of control at 0.06 monolayer can be achieved in the growth by molecular beam epitaxy, and the geometrical variation of layer thickness across a wafer at the 0.01 monolayer level can be detected.

Estimating and Enhancing the Yield of Tuneling SRAM Cells by Simulation

As a novel implementation of the static random access memory (SRAM), the tunneling SRAM (TSRAM) uses the negative differential resistance of tunnel diodes (TD’s) and potentially offers considerable improvements in both standby power dissipation and integration density compared to the conventional CMOS SRAM. TSRAM has not yet been realized with a useful bit capacity mainly because the level of uniformity required of the nanoscale TD’s has been demanding and difficult to achieve. In this letter, we propose a Monte Carlo approach for estimating the yield of TSRAM cells and show that by optimizing the cell’s external circuit parameters, we can relax the allowable tolerance of a key device parameter of a resonant-TD-(RTD) based cell by three times.

Channel selective tunnelling through a nanographene assembly.

We report selective tunnelling through a nanographene intermolecular tunnel junction achieved via scanning tunnelling microscope tip functionalization with hexa-peri-hexabenzocoronene (HBC) molecules. This leads to an offset in the alignment between the energy levels of the tip and the molecular assembly, resulting in the imaging of a variety of distinct charge density patterns in the HBC assembly, not attainable using a bare metallic tip. Different tunnelling channels can be selected by the application of an electric field in the tunnelling junction, which changes the condition of the HBC on the tip. Density functional theory-based calculations relate the imaged HBC patterns to the calculated molecular orbitals at certain energy levels. These patterns bear a close resemblance to the π-orbital states of the HBC molecule calculated at the relevant energy levels, mainly below the Fermi energy of HBC. This correlation demonstrates the ability of an HBC functionalized tip as regards accessing an energy range that is restricted to the usual operating bias range around the Fermi energy with a normal metallic tip at room temperature. Apart from relating to molecular orbitals, some patterns could also be described in association with the Clar aromatic sextet formula. Our observations may help pave the way towards the possibility of controlling charge transport between organic interfaces.

Conduction bottleneck in silicon nanochain single electron transistors operating at room temperature

Single electron transistors are fabricated on single Si nanochains, synthesised by thermal evaporation of SiO solid sources. The nanochains consist of one-dimensional arrays of ~10nm Si nanocrystals, separated by SiO 2 regions. At 300 K, strong Coulomb staircases are seen in the drain-source current-voltage (I ds-V ds) characteristics, and single-electron oscillations are seen in the drain-source current-gate voltage (I ds-V ds) characteristics. From 300-20 K, a large increase in the Coulomb blockade region is observed. The characteristics are explained using singleelectron Monte Carlo simulation, where an inhomogeneous multiple tunnel junction represents a nanochain. Any reduction in capacitance at a nanocrystal well within the nanochain creates a conduction " bottleneck", suppressing current at low voltage and improving the Coulomb staircase. The single-electron charging energy at such an island can be very high, ~20k BT at 300 K. © 2012 The Japan Society of Applied Physics.