Comparison of bleed and micro-vortex generator effects on supersonic boundary-layers

An experimental study of bleed and vortex generators in supersonic ow has been conducted. Methods were developed to analyze and directly compare the two systems' effects on turbulent boundary layers to better understand their potential to mitigate ow separation. LDA was used to measure two components of velocity in the boundary-layer for three cases|baseline, with bleed, or with a VG|at Mach numbers of 1.3, 1.5 and 1.8. The bleed system was comprised of a series of 2mm diameter normal holes operated at different suction rates, removing up to 10% of the incoming boundary layer. Three VG shapes were tested only at Mach 1.5 and 1.8. Measurements of the evolution of Hi and Cf downstream of each device indicate that Hi is not an appropriate parameter to gauge the effectiveness of vortex generators due to boundary layer wake distortion. The skin friction coeficient Cf may be a more appropriate measure. Similar increases in Cf were generated by VGs and bleed. The recovery to baseline conditions downstream of bleed was sensitive to Mach number, and more investigation of that effect will be required. Copyright © 2012 by University of Cambridge.

Multi-hit armour characterisation of metal-composite bi-layers

The ballistic performance of equi-mass plates made from (i) stainless steel (SS); (ii) carbon fibre/epoxy (CF) laminate and (iii) a hybrid plate of both materials has been characterised for a spherical steel projectile. The hybrid plate was orientated with steel on the impact face (SSCF) and on the distal face (CFSS). The penetration velocity (V 50) was highest for the SS plate and lowest for the CF plate. A series of double impact tests were performed, with an initial velocity V I and a subsequent velocity V II at the same impact site. An interaction diagram in (V I,V II) space was constructed to delineate penetration from survival under both impacts. The degree of interaction between the two impact events was greater for the CFSS plate than for the SSCF plate, implying that the distal face has the major effect upon the degree of interaction.

Hydrogen sensor based on silicon carbide (SiC) MOS capacitor

Silicon carbide (SiC) based MOS capacitor devices are used for gas sensing in high temperature and chemically reactive environments. A SiC MOS capacitor structure used as hydrogen sensor is defined and simulated. The effects of hydrogen concentration, temperature and interface traps on C-V characteristics were analysed. A comparison between structures with different oxide layer types (SiO2, TiO2 and ZnO) and thicknesses (50..10nm) was conducted. The TiO2 based structure has better performance than the SiO2 and ZnO structures. Also, the performance of the SiC MOS capacitor increases at thinner oxide layers. © 2012 IEEE.

Geometry of Miura-folded metamaterials.

This paper describes two folded metamaterials based on the Miura-ori fold pattern. The structural mechanics of these metamaterials are dominated by the kinematics of the folding, which only depends on the geometry and therefore is scale-independent. First, a folded shell structure is introduced, where the fold pattern provides a negative Poisson's ratio for in-plane deformations and a positive Poisson's ratio for out-of-plane bending. Second, a cellular metamaterial is described based on a stacking of individual folded layers, where the folding kinematics are compatible between layers. Additional freedom in the design of the metamaterial can be achieved by varying the fold pattern within each layer.

Enzyme-free glucose biosensor based on low density CNT forest grown directly on a Si/SiO2 substrate

A highly sensitive nonenzymatic amperometric glucose sensor was fabricated by using Ni nanoparticles homogeneously dispersed within and on the top of a vertically aligned CNT forest (CNT/Ni nanocomposite sensor), which was directly grown on a Si/SiO2 substrate. The surface morphology and elemental analysis were characterized using scanning electron microscopy and energy dispersive spectroscopy, respectively. Cyclic voltammetry and chronoamperometry were used to evaluate the catalytic activities of CNT/Ni electrode. The CNT/Ni nanocomposite sensor exhibited a great enhancement of anodic peak current after adding 5 mM glucose in alkaline solution. The sensor can also be applied to the quantification of glucose content with a linear range covering from 5 μM to 7 mM, a high sensitivity of 1433 μA mM-1 cm-2, and a low detection limit of 2 μM. The CNT/Ni nanocomposite sensor exhibits good reproducibility and long-term stability, moreover, it was also relatively insensitive to commonly interfering species, such as uric acid, ascorbic acid, acetaminophen, sucrose and d-fructose. © 2013 Elsevier B.V.

Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers.

We demonstrate a method to realize vertically oriented Ge nanowires on Si(111) substrates. Ge nanowires were grown by chemical vapor deposition using Au nanoparticles to seed nanowire growth via a vapor-liquid-solid growth mechanism. Rapid oxidation of Si during Au nanoparticle application inhibits the growth of vertically oriented Ge nanowires directly on Si. The present method employs thin Ge buffer layers grown at low temperature less than 600 degrees C to circumvent the oxidation problem. By using a thin Ge buffer layer with root-mean-square roughness of approximately 2 nm, the yield of vertically oriented Ge nanowires is as high as 96.3%. This yield is comparable to that of homoepitaxial Ge nanowires. Furthermore, branched Ge nanowires could be successfully grown on these vertically oriented Ge nanowires by a secondary seeding technique. Since the buffer layers are grown under moderate conditions without any high temperature processing steps, this method has a wide process window highly suitable for Si-based microelectronics.

Scaling of transitionally-rough flow structures in DNSes of channels with riblets up to Reτ=550

The linear, drag-reducing effect of vanishingly small riblets breaks down once their size is in the transitionally-rough regime. We have previously reported that this breakdown is caused by the additional Reynolds stresses produced by the appearance of elongated spanwise rollers just above the riblet surface. These rollers are related with the Kelvin--Helmholtz instability of free shear layers, and to similar structures appearing over other rough and porous surfaces. However, because of the limited Reτ=180 in our previous DNSes, it could not be determined whether those structures scaled in inner or outer units. Furthermore, it is questionable if results in the transitionally-rough regime at Reτ=180 can be extrapolated to configurations of practical interest. At such small Reynolds numbers, roughness of transitional size can perturb a large portion of the boundary layer, which is not the case in most industrial and atmospheric applications. To clarify these issues we have conducted a set of DNSes at Reτ=550. Our results indicate that the spanwise rollers scale in wall units, and support the validity of the extrapolation to configurations of practical interest.

Measuring the composition of AlGaN layers in GaN based structures grown on 150 mm Si substrates using (2 0 5) reciprocal space maps

A critical element for the successful growth of GaN device layers on Si is accurate control of the AlGaN buffer layers used to manage strain. Here we present a method for measuring the composition of the AlGaN buffer layers in device structures which makes use of a one-dimensional x-ray detector to provide efficient measurement of a reciprocal space map which covers the full compositional range from AlN to GaN. Combining this with a suitable x-ray reflection with low strain sensitivity it is possible to accurately determine the Al fraction of the buffer layers independent of their relaxation state. © 2013 IOP Publishing Ltd.