Recent progress in high-bit-rate applications of four-wave-mixing in SOAs

Non-linearities in semiconductor optical amplifiers have been used to demonstrate a wide range of functions applicable to future optical networks such as wavelength conversion and optical switching. Four-wave-mixing effects in SOAs have been studied extensively in many laboratories with respect to the underlying physical processes and system applications. At BT Labs an optimization of SOAs for FWM has been achieved by altering the device active layer composition and by increasing the device length. We will review recent progress at BT Labs in dispersion compensation, wavelength conversion and demultiplexing at bit-rates of 40 Gbit/s using these devices.

Recent progress in high-bit-rate applications of four-wave-mixing in SOAs

Non-linearities in semiconductor optical amplifiers have been used to demonstrate a wide range of functions applicable to future optical networks such as wavelength conversion and optical switching. Four-wave-mixing effects in SOAs have been studied extensively in many laboratories with respect to the underlying physical processes and system applications. At BT Labs an optimisation of SOAs for FWM has been achieved by altering the device active layer composition and by increasing the device length. We will review recent progress at BT Labs in dispersion compensation, wavelength conversion and demultiplexing at bit-rates of 40Gbit/s using these devices.

Single domain YBCO/Ag bulk superconductors fabricated by seeded infiltration and growth

We have applied the seeded infiltration and growth (IG) technique to the processing of samples containing Ag in an attempt to fabricate Ag-doped Y-Ba-Cu-O (YBCO) bulk superconductors with enhanced mechanical properties. The IG technique has been used successfully to grow bulk Ag-doped YBCO superconductors of up to 25 mm in diameter in the form of single grains. The distribution of Ag in the parent Y-123 matrix fabricated by the IG technique is observed to be at least as uniform as that in samples grown by conventional top seeded melt growth (TSMG). Fine Y-211 particles were observed to be embedded within the Y-123 matrix for the IG processed samples, leading to a high critical current density, Jc, of over 70 kA/cm2 at 77.3 K in self-field. The distribution of Y-211 in the IG sample microstructure, however, is inhomogeneous, which leads to a variation in the spatial distribution of Jc throughout the bulk matrix. A maximum-trapped field of around 0.43 T at 1.2 mm above the sample surface (i.e. including 0.7 mm for the sensor mould thickness) is observed at liquid nitrogen temperature, despite the relatively small grain size of the sample (20 mm diameter × 7 mm thickness). © 2008 IOP Publishing Ltd.