Engineering Fundamentals of Energy Efficiency

Using energy more efficiently is essential if carbon emissions are to be reduced. According to the International Energy Agency (IEA), energy efficiency improvements represent the largest and least costly savings in carbon emissions, even when compared with renewables, nuclear power and carbon capture and storage. Yet, how should future priorities be directed? Should efforts be focused on light bulbs or diesel engines, insulating houses or improving coal-fired power stations? Previous attempts to assess energy efficiency options provide a useful snapshot for directing short-term responses, but are limited to only known technologies developed under current economic conditions. Tomorrow's economic drivers are not easy to forecast, and new technical solutions often present in a disruptive manner. Fortunately, the theoretical and practical efficiency limits do not vary with time, allowing the uncertainty of economic forecasts to be avoided and the potential of yet to be discovered efficient designs to be captured. This research aims to provide a rational basis for assessing all future developments in energy efficiency. The global fow of energy through technical devices is traced from fuels to final services, and presented as an energy map to convey visually the scale of energy use. An important distinction is made between conversion devices, which upgrade energy into more useable forms, and passive systems, from which energy is lost as low temperature heat, in exchange for final services. Theoretical efficiency limits are calculated for conversion devices using exergy analysis, and show a 89% potential reduction in energy use. Efforts should be focused on improving the efficiency of, in relative order: biomass burners, refrigeration systems, gas burners and petrol engines. For passive systems, practical utilisation limits are calculated based on engineering models, and demonstrate energy savings of 73% are achievable. Significant gains are found in technical solutions that increase the thermal insulation of building fabrics and reduce the mass of vehicles. The result of this work is a consistent basis for comparing efficiency options, that can enable future technical research and energy policy to be directed towards the actions that will make the most difference.

The effect of dislocations on the efficiency of InGaN/GaN solar cells

Two solar cells based on an InGaN/GaN p-i-n hetero-junction, but having different dislocation densities, were fabricated and characterized. The structures were grown on c-plane (0001) GaN-on-sapphire templates with different threading dislocation (TD) densities of 5×108 and 5×109 cm-2. Structural characterization revealed the presence of V-defects in the InGaN epilayer. Since each V-defect was associated with a TD, the structural as well as the optical properties worsened with a higher TD density in the GaN/sapphire template. It was also found that additional dislocations were generated in the p-GaN layer over the V-defects in the InGaN layer. Because of its superior structural quality, the peak external quantum efficiency (EQE) of the low TD density sample was three times higher than that of the high TD density sample. © 2013 Elsevier B.V.

Enhancement of microfluidic efficiency with nanocrystalline diamond interlayer in the ZnO-based surface acoustic wave device

Ultra-smooth nanocrystalline diamond (UNCD) films with high-acoustic wave velocity were introduced into ZnO-based surface acoustic wave (SAW) devices to enhance their microfluidic efficiency by reducing the acoustic energy dissipation into the silicon substrate and improving the acoustic properties of the SAW devices. Microfluidic efficiency of the ZnO-based SAW devices with and without UNCD inter layers was investigated and compared. Results showed that the pumping velocities increase with the input power and those of the ZnO/UNCD/Si devices are much larger than those of the ZnO/Si devices at the same power. The jetting efficiency of the droplet was improved by introducing the UNCD interlayer into the ZnO/Si SAW device. Improvement in the microfluidic efficiency is mainly attributed to the diamond layer, which restrains the acoustic wave to propagate in the top layer rather than dissipating into the substrate. © 2013 Springer-Verlag Berlin Heidelberg.

A global assessment of manufacturing: Economic development, energy use, carbon emissions, and the potential for energy efficiency and materials recycling

We present in two parts an assessment of global manufacturing. In the first part, we review economic development, pollution, and carbon emissions from a country perspective, tracking the rise of China and other developing countries. The results show not only a rise in the economic fortunes of the newly industrializing nations, but also a significant rise in global pollution, particularly air pollution and CO2 emissions largely from coal use, which alter and even reverse previous global trends. In the second part, we change perspective and quantitatively evaluate two important technical strategies to reduce pollution and carbon emissions: energy efficiency and materials recycling. We subdivide the manufacturing sector on the basis of the five major subsectors that dominate energy use and carbon emissions: (a) iron and steel, (b) cement, (c) plastics, (d) paper, and (e) aluminum. The analysis identifies technical constraints on these strategies, but by combined and aggressive action, industry should be able to balance increases in demand with these technical improvements. The result would be high but relatively flat energy use and carbon emissions. The review closes by demonstrating the consequences of extrapolating trends in production and carbon emissions and suggesting two options for further environmental improvements, materials efficiency, and demand reduction. © 2013 by Annual Reviews. All rights reserved.

Low-cost high-efficiency GaN LED on large-area si substrate

The use of large size Si substrates for epitaxy of nitride light emitting diode (LED) structures has attracted great interest because Si wafers are readily available in large diameter at low cost. In addition, such wafers are compatible with existing processing lines for the 6-inch and larger wafer sizes commonly used in the electronics industry. With the development of various methods to avoid wafer cracking and reduce the defect density, the performance of GaN-based LED and electronic devices has been greatly improved. In this paper, we review our methods of growing crack-free InGaN-GaN multiple quantum well (MQW) LED structures of high crystalline quality on Si(111) substrates. The performance of processed LED devices and its dependence on the threading dislocation density were studied. Full wafer-level LED processing using a conventional 6-inch III-V processing line is also presented, demonstrating the great advantage of using large-size Si substrates for mass production of GaN LED devices.

Model for quantum efficiency of guided mode plasmonic enhanced silicon Schottky detectors

Plasmonic enhanced Schottky detectors operating on the basis of the internal photoemission process are becoming an attractive choice for detecting photons with sub bandgap energy. Yet, the quantum efficiency of these detectors appears to be low compare to the more conventional detectors which are based on interband transitions in a semiconductor. Hereby we provide a theoretical model to predict the quantum efficiency of guided mode internal photoemission photodetector with focus on the platform of silicon plasmonics. The model is supported by numerical simulations and comparison to experimental results. Finally, we discuss approaches for further enhancement of the quantum efficiency.

Optimization of efficiency-loss figure of merit in carrier-depletion silicon Mach-Zehnder optical modulator.

In this paper we study the optimization of interleaved Mach-Zehnder silicon carrier depletion electro-optic modulator. Following the simulation results we demonstrate a phase shifter with the lowest figure of merit (modulation efficiency multiplied by the loss per unit length) 6.7 V-dB. This result was achieved by reducing the junction width to 200 nm along the phase-shifter and optimizing the doping levels of the PN junction for operation in nearly fully depleted mode. The demonstrated low FOM is the result of both low V(π)L of ~0.78 Vcm (at reverse bias of 1V), and low free carrier loss (~6.6 dB/cm for zero bias). Our simulation results indicate that additional improvement in performance may be achieved by further reducing the junction width followed by increasing the doping levels.

Silicon-metal waveguide as a high efficiency Schottky detector for telecom wavelengths

We demonstrate an integrated on-chip compact and high efficiency Schottky detector for telecom wavelengths based on silicon metal waveguide. Detection is based on the internal photoemission process. Theory and experimental results are discussed. © 2012 OSA.

Silicon-metal waveguide as a high efficiency schottky detector for telecom wavelengths

We demonstrate an integrated on-chip compact and high efficiency Schottky detector for telecom wavelengths based on silicon metal waveguide. Detection is based on the internal photoemission process. Theory and experimental results are discussed. © 2012 Optical Society of America.

Switch mode constant current LED Driver with high efficiency, high precision and wide dimming ratio

A high efficiency hard switching constant current LED driver is presented with high overall efficiency, high current precision, high LED efficacy, flicker-free and wide constant current dimming ratio. The high stable lighting source provides the best solution for office light, reading light and LCD backlight. © 2013 IEEE.

Carrierless amplitude and phase modulation for low-cost,high-spectral-efficiency optical datacommunication links

Carrierless amplitude and phase modulation for next-generation datacommunication links is considered for the first time. Low-cost implementation of a high-spectral-efficiency 10 Gb/s channel is demonstrated as a route to links at 40 Gb/s and beyond. © 2010 Optical Society of America.

Gigabit/s modulation of twin-electrode high-brightness tapered laser with high modulation efficiency

Simultaneous high modulation speed and high modulation efficiency operation of a two-electrode tapered laser is reported. 1Gb/s direct data modulation is achieved with 68mA applied current swing for a 0.95W output optical modulation amplitude. © 2009 Optical Society of America.