237 resultados para Visible lasers


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A new, and very simple spectrometer based on birefringent fiber is described. A resolution of 0.02 angstrom has been achieved, and the system has been used to measure diode laser chirp. A length of 10km of fiber would be sufficient to resolve single mode line widths.

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Results are given for bistable effects in closely coupled twin stripe lasers. These devices use controlled adjustment of asymmetric transverse optical gain to obtain bistability. Various bistable effects have been observed. Initially the authors reported a large light/current hysteresis loop obtained as the drive current to the laser was raised and lowered. Information concerning the bistable mechanisms was then obtained by applying small current pulses into each stripe. It was thus found that bistability was involved with the switching from one stable laser waveguiding mechanism to another. More recently the experimental measurement system has been much improved. Through the use of computer control of motorised micromovements and computer controlled data management, time resolved near and far field, and charge carrier concentration distribution measurements have been more accurately carried out. The paper will outline briefly this system, and report on how it has helped to reveal new mechanisms of bistability in twin stripe lasers.

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The potential of 1.3-μm AlGaInAs multiple quantum-well (MQW) laser diodes for uncooled operation in high-speed optical communication systems is experimentally evaluated by characterizing the temperature dependence of key parameters such as the threshold current, transparency current density, optical gain and carrier lifetime. Detailed measurements performed in the 20°C-100°C temperature range indicate a localized T0 value of 68 K at 98°C for a device with a 2.8μm ridge width and 700-μm cavity length. The transparency current density is measured for temperatures from 20°C to 60°C and found to increase at a rate of 7.7 A·cm -2 · °C-1. Optical gain characterizations show that the peak modal gain at threshold is independent of temperature, whereas the differential gain decreases linearly with temperature at a rate of 3 × 10-4 A-1·°C-1. The differential carrier lifetime is determined from electrical impedance measurements and found to decrease with temperature. From the measured carrier lifetime we derive the monomolecular (A), radiative (B), and nonradiative Auger (C) recombination coefficients and determine their temperature dependence in the 20 °C-80 °C range. Our study shows that A is temperature independent, B decreases with temperature, and C exhibits a less pronounced increase with temperature. The experimental observations are discussed and compared with theoretical predictions and measurements performed on other material systems. © 2005 IEEE.