Direct growth of horizontally aligned carbon nanotubes between electrodes and its application to field-effect transistors

This paper presents direct growth of horizontally aligned carbon nanotubes (CNTs) between two predefined various inter-spacing up to tens of microns of electrodes (pads) and its use as CNT field-effect transistors (CNT-FETs). The catalytic metals were prepared, consisting of iron (Fe), aluminum (Al) and platinum (Pt) triple layers, on the thermal silicon oxide substrate (Pt/Al/Fe/SiO2). Scanning electron microscopy measurements of CNT-FETs from the as-grown samples showed that over 80% of the nanotubes are grown across the catalytic electrodes. Moreover, the number of CNTs across the catalytic electrodes is roughly controllable by adjusting the growth condition. The Al, as the upper layer on Fe electrode, not only plays a role as a barrier to prevent vertical growth but also serves as a porous medium that helps in forming smaller nano-sized Fe particles which would be necessary for lateral growth of CNTs. Back-gate field effect transistors were demonstrated with the laterally aligned CNTs. The on/off ratios in all the measured devices are lower than 100 due to the drain leakage current. ©2010 IEEE.

Some characteristics of thin shear layers in homogeneous turbulent flow.

Tomographic particle image velocimetry measurements of homogeneous isotropic turbulence that have been made in a large mixing tank facility at Cambridge are analysed in order to characterize thin highly sheared regions that have been observed. The results indicate that such regions coincide with regions of high enstrophy, dissipation and stretching. Large velocity jumps are observed across the width of these regions. The thickness of the shear layers seems to scale with the Taylor microscale, as has been suggested previously. The results discussed here concentrate on examining individual realizations rather than statistics of these regions.