124 resultados para Switching law
Resumo:
The Trench Insulated Gate Bipolar Transistor (IGBT) is the most promising structure for the next generation of power semiconductor devices with wide applications ranging from motor control (1-4 kV) to HVDC (6.5 kV). Here we present for the first time an optimum design of a 1.4kV Trench IGBT using a new, fully integrated optimisation system comprising process and device simulators and the RSM optimiser. The use of this new TCAD system has contributed largely to realizing devices with characteristics far superior to the previous DMOS generation of IGBTs. Full experimental results on 1.4kV Trench IGBTs which are in excellent agreement with the TCAD predictions are reported.
Resumo:
In this paper authors report the first demonstration of a diode laser powered Kerr effect device, consisting of a single birefringent fiber, able to phase-shift and switch an optical signal generated by a second laser diode. They have obtained fast, stable phase-shifting of 90° in a single fiber, at a coupled pump power of only 20 mW. Using this phase shift to induce polarization switching with resultant gating, 25% modulation of the diode laser signal has been observed, with a detection limited-rise time of 10ns.
Resumo:
We experimentally demonstrate femtosecond switching of a fully packaged hybrid-integrated Mach-Zehnder switch. A record switching window of 620fs at fult-width-half-maximum is achieved. © 2004 Optical Society of America.
Resumo:
We present a novel optical routing scheme scalable to greater than 50×50 channels with a potential aggregate bit-rate of 1Tbps. The proof-of-principle experiment demonstrates the feasibility of the router with a de-multiplexed Q-factor of 6.35. © 2004 Optical Society of America.