Thermal characterization of SOI CMOS micro hot-plate gas sensors

This work reports on thermal characterization of SOI (silicon on insulator) CMOS (complementary metal oxide semiconductor) MEMS (micro electro mechanical system) gas sensors using a thermoreflectance (TR) thermography system. The sensors were fabricated in a CMOS foundry and the micro hot-plate structures were created by back-etching the CMOS processed wafers in a MEMS foundry using DRIE (deep reactive ion etch) process. The calibration and experimental details of the thermoreflectance based thermal imaging setup, used for these micro hot-plate gas sensor structures, are presented. Experimentally determined temperature of a micro hot-plate sensor, using TR thermography and built-in silicon resistive temperature sensor, is compared with that estimated using numerical simulations. The results confirm that TR based thermal imaging technique can be used to determine surface temperature of CMOS MEMS devices with a high accuracy. © 2010 EDA Publishing/THERMINIC.

Thermal-creep analysis of concrete bridges

The creep effects on sequentially built bridges are analysed by the theory of thermal creep. Two types of analysis are used: time dependent and steady state. The traditional uniform creep analysis is also introduced briefly. Both simplified and parabolic normalising creep-temperature functions are used in the analysis for comparison. Numerical examples are presented, calculated by a computer program based on the theory of thermal creep and using the displacement method. It is concluded that different assumptions within thermal creep can lead to very different results when compared with uniform creep analysis. The steady-state analysis of monolithically built structures can serve as a limit to evaluate total creep effects for both monolithically and sequentially built structures. The importance of the correct selection of the normalising creep-temperature function is demonstrated.