A novel scalable photonic analog switch architecture based on semiconductor optical amplifiers

We propose a novel semiconductor optical amplifier (SOA) based switch architecture for analog applications. Proof-of-principle experiments show that the system is very linear with an SFDR of approximately 100dB·Hz 2/3 for a switching time of 50μs. The port number of this switch is scalable and can be expanded to 80 × 80.

Directly modulated wavelength-multiplexed integrated microring laser array

The first demonstration of a directly modulated microring laser array is presented for on-off keyed, wavelength- division- multiplexed fiber-optic data transmission. GaInAsP-InP microring resonators oscillating at separate wavelengths in the 1.5-μm band are vertically coupled to a common passive waveguide bus, which is fabricated on the reverse side of the InP membrane. Two microrings defined with radii for a wavelength channel separation of 6 nm have been assessed for both individual and simultaneous operation. Negligible power penalty (<0.2 dB) is observed for wavelength-division-multiplexed operation with and without transmission over a 25-km fiber span in a manner which indicates low crosstalk between the integrated sources. A device area of less than 0.12 mm2 per microring on a common passive bus allows a highly scalable solution for short-reach wavelength-multiplexed links. © 2008 IEEE.

Enhanced performance of an all-optical parity checker using a single Mach-Zehnder interferometer

An all-optical parity checker is proposed that requires only a single Mach-Zehnder interferometer. Simulation results demonstrate an 8dB improvement in extinction ratio at 10 Gb/s operation. © 1999 Optical Society of America.

Hybridisation platform demonstrating all optical wavelength conversion at 10 and 20Gbit/s

The development of a high performance hybrid integration platform is demonstrated using an all optical wavelength converter based on an integrated SOA MZI. The device structure, transfer functions, power penalties and regenerative properties are presented. © 2004 Optical Society of America.

1.36Tbit/s spectral slicing source based on a Cr4+:YAG femtosecond laser

We report a novel OTDM/WDM source based on spectral slicing of a passively mode-locked Cr4: YAG femtosecond pulse source. Total capacities up to 682Gbit/s and 1.36bit/s with spectral efficiencies of 0.2b/s/Hz and 0.4b/s/Hz have been achieved. © 2003 Optical Society of America.

Simultaneous pulse compression and jitter reduction at 10GHz using novel self-seeding gain-switched DFB laser incorporating a DILM

A novel scheme using a 10 GHz gain-switched DFB laser with simultaneous pulse width and jitter compression allows generation of 380fs pulses with both system limited 150fs jitter and 30 dB extinction ratio. ©1999 Optical Society of America.

The viability of subcarrier modulation for enhancing the performance of installed-base MMF links

The technique of Subcarrier Modulation is assessed by statistical analysis as a viable solution to broadband data transmission over dispersion limited multimode fibre. It is shown that a suitable passband region for transmission of 2.5 Gb/s channels exists at 5 GHz in greater than 80% of worst-case fibres under standard SMF/MMF launch conditions. ©2002 Optical Society of America.

Strong plasmonic enhancement of photovoltage in graphene.

From the wide spectrum of potential applications of graphene, ranging from transistors and chemical sensors to nanoelectromechanical devices and composites, the field of photonics and optoelectronics is believed to be one of the most promising. Indeed, graphene's suitability for high-speed photodetection was demonstrated in an optical communication link operating at 10 Gbit s(-1). However, the low responsivity of graphene-based photodetectors compared with traditional III-V-based ones is a potential drawback. Here we show that, by combining graphene with plasmonic nanostructures, the efficiency of graphene-based photodetectors can be increased by up to 20 times, because of efficient field concentration in the area of a p-n junction. Additionally, wavelength and polarization selectivity can be achieved by employing nanostructures of different geometries.

Mode control in vertical-cavity surface-emitting lasers by post-processing using focused ion-beaih etching

Single-mode emission is achieved in previously multimode gain-guided vertical-cavity surface-emitting lasers (VCSEL's) by localized modification of the mirror reflectivity using focused ion-beam etching. Reflectivity engineering is also demonstrated to suppress transverse mode emission in an oxide-confined device, reducing the spectral width from 1.2 nm to less than 0.5 nm.

The silicon backplane design for an LCOS polarization-insensitive phase hologram SLM

Polarization-insensitivity is achieved in a reflective spatial light modulator by laying a quarter-wave plate (QWP) at the incident wavelength directly over the mirror pixels of a silicon backplane, and forming a nematle Fréedrickcz cell over the QWP to modulate the reflected phase. To achieve the highest drive voltage from the available silicon process, a switched voltage common front electrode design is described, with variable amplitude square wave drive to the pixels to maintain constant root-mean-square drive and minimize phase fluctuations during the dc balance refresh cycle. The silicon has been fabricated and liquid-crystal-on-silicon cells both with and without the QWP assembled; applications include optically transparent switches for optical networks, beam steering for add-drop multiplexers for wavelength-division- multiplexing telecommunications, television multicast, and holographic projection.

Free space adaptive optical interconnect, using a ferroelectric liquid crystal SLM for beam steering

A free-space, board-to-board, adaptive optical interconnect demonstrator has been developed. Binary phase gratings displayed on a Ferroelectric Liquid Crystal Spatial Light Modulator are used to maintain data transfer at 1.25Gbps, given varying optical misalignment © 2005 Optical Society of America.

Strong plasmonic enhancement of photovoltage in graphene

From the wide spectrum of potential applications of graphene, ranging from transistors and chemical sensors to nanoelectromechanical devices and composites, the field of photonics and optoelectronics is believed to be one of the most promising. Indeed, graphene's suitability for high-speed photodetection was demonstrated in an optical communication link operating at 10 Gbit s 1. However, the low responsivity of graphene-based photodetectors compared with traditional III-V-based ones is a potential drawback. Here we show that, by combining graphene with plasmonic nanostructures, the efficiency of graphene-based photodetectors can be increased by up to 20 times, because of efficient field concentration in the area of a p-n junction. Additionally, wavelength and polarization selectivity can be achieved by employing nanostructures of different geometries. © 2011 Macmillan Publishers Limited. All rights reserved.