Zinc oxide nanowire based hydrogen sensor on SOI CMOS platform

Here we report on the successful low-temperature growth of zinc oxide nanowires (ZnONWs) on silicon-on-insulator (SOI) CMOS micro-hotplates and their response, at different operating temperatures, to hydrogen in air. The SOI micro-hotplates were fabricated in a commercial CMOS foundry followed by a deep reactive ion etch (DRIE) in a MEMS foundry to form ultra-low power membranes. The micro-hotplates comprise p+ silicon micro-heaters and interdigitated metal electrodes (measuring the change in resistance of the gas sensitive nanomaterial). The ZnONWs were grown as a post-CMOS process onto the hotplates using a CMOS friendly hydrothermal method. The ZnONWs showed a good response to 500 to 5000 ppm of hydrogen in air. We believe that the integration of ZnONWs with a MEMS platform results in a low power, low cost, hydrogen sensor that would be suitable for handheld battery-operated gas sensors. © 2011 Published by Elsevier Ltd.

Complementary metal-oxide-semiconductor-compatible and self-aligned catalyst formation for carbon nanotube synthesis and interconnect fabrication

We have for the first time developed a self-aligned metal catalyst formation process using fully CMOS (complementary metal-oxide-semiconductor) compatible materials and techniques, for the synthesis of aligned carbon nanotubes (CNTs). By employing an electrically conductive cobalt disilicide (CoSi 2) layer as the starting material, a reactive ion etch (RIE) treatment and a hydrogen reduction step are used to transform the CoSi 2 surface into cobalt (Co) nanoparticles that are active to catalyze aligned CNT growth. Ohmic contacts between the conductive substrate and the CNTs are obtained. The process developed in this study can be applied to form metal nanoparticles in regions that cannot be patterned using conventional catalyst deposition methods, for example at the bottom of deep holes or on vertical surfaces. This catalyst formation method is crucially important for the fabrication of vertical and horizontal interconnect devices based on CNTs. © 2012 American Institute of Physics.

Local synthesis and alignment of zinc oxide nanowires in aqueous solution using microheaters

A bottom-up technique for synthesizing transversely suspended zinc oxide nanowires (ZnO NWs) under a zinc nitrate (Zn(NO 3) 2· 6H 2O) and hexamethylenetetramine (HMTA, (CH 2) 6·N 4) solution within a microfabricated device is reported in this paper. The device consists of a microheater which is used to initially create an oxidized ZnO seed layer. ZnO NWs are then locally synthesized by the microheater and electrodes embedded within the devices are used to drive electric field directed horizontal alignment of the nanowires within the device. The entire process is carried out at low temperature. This approach has the potential to considerably simplify the fabrication and assembly of ZnO nanowires on CMOS compatible substrates, allowing for the chemical synthesis to be carried out under near-ambient conditions by locally defining the conditions for nanowire growth on a silicon reactor chip. © 2012 IEEE.

Thermal plasma synthesis of superparamagnetic iron oxide nanoparticles

Superparamagnetic iron oxide nanoparticles were synthesized by injecting ferrocene vapor and oxygen into an argon/helium DC thermal plasma. Size distributions of particles in the reactor exhaust were measured online using an aerosol extraction probe interfaced to a scanning mobility particle sizer, and particles were collected on transmission electron microscopy (TEM) grids and glass fiber filters for off-line characterization. The morphology, chemical and phase composition of the nanoparticles were characterized using TEM and X-ray diffraction, and the magnetic properties of the particles were analyzed with a vibrating sample magnetometer and a magnetic property measurement system. Aerosol at the reactor exhaust consisted of both single nanocrystals and small agglomerates, with a modal mobility diameter of 8-9 nm. Powder synthesized with optimum oxygen flow rate consisted primarily of magnetite (Fe 3O 4), and had a room-temperature saturation magnetization of 40.15 emu/g, with a coercivity and remanence of 26 Oe and 1.5 emu/g, respectively. © Springer Science+Business Media, LLC 2011.

Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

The composition of amorphous oxide semiconductors, which are well known for their optical transparency, can be tailored to enhance their absorption and induce photoconductivity for irradiation with green, and shorter wavelength light. In principle, amorphous oxide semiconductor-based thin-film photoconductors could hence be applied as photosensors. However, their photoconductivity persists for hours after illumination has been removed, which severely degrades the response time and the frame rate of oxide-based sensor arrays. We have solved the problem of persistent photoconductivity (PPC) by developing a gated amorphous oxide semiconductor photo thin-film transistor (photo-TFT) that can provide direct control over the position of the Fermi level in the active layer. Applying a short-duration (10 ns) voltage pulse to these devices induces electron accumulation and accelerates their recombination with ionized oxygen vacancy sites, which are thought to cause PPC. We have integrated these photo-TFTs in a transparent active-matrix photosensor array that can be operated at high frame rates and that has potential applications in contact-free interactive displays. © 2012 Macmillan Publishers Limited. All rights reserved.

Temperature dependent electron transport in amorphous oxide semiconductor thin film transistors

A temperature-dependent mobility model in amorphous oxide semiconductor (AOS) thin film transistors (TFTs) extracted from measurements of source-drain terminal currents at different gate voltages and temperatures is presented. At low gate voltages, trap-limited conduction prevails for a broad range of temperatures, whereas variable range hopping becomes dominant at lower temperatures. At high gate voltages and for all temperatures, percolation conduction comes into the picture. In all cases, the temperature-dependent mobility model obeys a universal power law as a function of gate voltage. © 2011 IEEE.