A 660MHz ZVS DC-DC converter using gate-driver charge-recycling in 0.18μm CMOS with an integrated output filter

The design and manufacture of a prototype chip level power supply is described, with both simulated and experimental results. Of particular interest is the inclusion of a fully integrated on-chip LC filter. A high switching frequency of 660MHz and the design of a device drive circuit reduce losses by supply stacking, low-swing signaling and charge recycling. The paper demonstrates that a chip level converter operating at high frequency can be built and shows how this can be achieved, using zero voltage switching techniques similar to those commonly used in larger converters. Both simulations and experimental data from a fabricated circuit in 0.18μm CMOS are included. The circuit converts 2.2V to 0.75∼1.0V at ∼55mA. ©2008 IEEE.

Breakdown voltage for superjunction power devices with charge imbalance: An analytical model valid for both punch through and non punch through devices

An analytical model for the electric field and the breakdown voltage (BV) of an unbalanced superjunction (SJ) device is presented in this paper. The analytical technique uses a superposition approach treating the asymmetric charge in the pillars as an excess charge component superimposed on a balanced charge component. The proposed double-exponentialmodel is able to accurately predict the electric field and the BV for unbalanced SJ devices in both punch through and non punch through conditions. The model is also reasonably accurate at extremely high levels of charge imbalance when the devices behave similarly to a PiN diode or to a high-conductance layer. The analytical model is compared against numerical simulations of charge unbalanced SJ devices and against experimental results. © 2009 IEEE.

Trench insulated gate bipolar transistor - a high power switching device

This paper presents a comprehensive theoretical study of the Trench Insulated Gate Bipolar Transistors (TIGBT). Specific physical and geometrical effects, such as the accumulation layer injection, increased channel density, increased channel charge and transversal electric field modulation are discussed. The potential advantages of the Trench IGBT over its conventional planar variant are highlighted. It is concluded that the Trench IGBT is one of the most promising structures in the area of high voltage MOS-controllable switching devices.

Point injection in trench insulated gate bipolar transistor for ultra low losses

In this paper we propose novel designs that enhance the plasma concentration across the Field Stop IGBT. The "p-ring" and the "point-injection" type devices exhibit increased cathode side conductivity modulation which results in impressive IGBT performance improvement. These designs are shown to be extremely effective in lowering the on-state losses without compromising the switching performance or the breakdown rating. For the same switching losses we can achieve more than 20% reduction of the on state energy losses compared to the conventional FS IGBT. © 2012 IEEE.

A Stochastic Model for Electron Multiplication Charge-Coupled Devices - From Theory to Practice

Electron multiplication charge-coupled devices (EMCCD) are widely used for photon counting experiments and measurements of low intensity light sources, and are extensively employed in biological fluorescence imaging applications. These devices have a complex statistical behaviour that is often not fully considered in the analysis of EMCCD data. Robust and optimal analysis of EMCCD images requires an understanding of their noise properties, in particular to exploit fully the advantages of Bayesian and maximum-likelihood analysis techniques, whose value is increasingly recognised in biological imaging for obtaining robust quantitative measurements from challenging data. To improve our own EMCCD analysis and as an effort to aid that of the wider bioimaging community, we present, explain and discuss a detailed physical model for EMCCD noise properties, giving a likelihood function for image counts in each pixel for a given incident intensity, and we explain how to measure the parameters for this model from various calibration images. © 2013 Hirsch et al.

A Novel System for Reducing Turbo-Lag by Injection of Compressed Gas into the Exhaust Manifold

A key challenge in achieving good transient performance of highly boosted engines is the difficulty of accelerating the turbocharger from low air flow conditions (“turbo lag”). Multi-stage turbocharging, electric turbocharger assistance, electric compressors and hybrid powertrains are helpful in the mitigation of this deficit, but these technologies add significant cost and integration effort. Air-assist systems have the potential to be more cost-effective. Injecting compressed air into the intake manifold has received considerable attention, but the performance improvement offered by this concept is severely constrained by the compressor surge limit. The literature describes many schemes for generating the compressed gas, often involving significant mechanical complexity and/or cost. In this paper we demonstrate a novel exhaust assist system in which a reservoir is charged during braking. Experiments have been conducted using a 2.0 litre light-duty Diesel engine equipped with exhaust gas recirculation (EGR) and variable geometry turbine (VGT) coupled to an AC transient dynamometer, which was controlled to mimic engine load during in-gear braking and acceleration. The experimental results confirm that the proposed system reduces the time to torque during the 3rd gear tip-in by around 60%. Such a significant improvement was possible due to the increased acceleration of turbocharger immediately after the tip-in. Injecting the compressed gas into the exhaust manifold circumvents the problem of compressor surge and is the key enabler of the superior performance of the proposed concept.

A fast detailed-chemistry modelling approach for simulating the SI-HCCI transition

An established Stochastic Reactor Model (SRM) is used to simulate the transition from Spark Ignition (SI) to Homogeneous Charge Compression Ignition (HCCI) combustion mode in a four cylinder in-line four-stroke naturally aspirated direct injection SI engine with cam profile switching. The SRM is coupled with GT-Power, a one-dimensional engine simulation tool used for modelling engine breathing during the open valve portion of the engine cycle, enabling multi-cycle simulations. The mode change is achieved by switching the cam profiles and phasing, resulting in a Negative Valve Overlap (NVO), opening the throttle, advancing the spark timing and reducing the fuel mass as well as using a pilot injection. A proven technique for tabulating the model is used to create look-up tables in both SI and HCCI modes. In HCCI mode several tables are required, including tables for the first NVO, transient valve timing NVO, transient valve timing HCCI and steady valve timing HCCI and NVO. This results in the ability to simulate the transition with detailed chemistry in very short computation times. The tables are then used to optimise the transition with the goal of reducing NO x emissions and fluctuations in IMEP. Copyright © 2010 SAE International.