3D FE Analyses of Buried Pipeline with Elbows Subjected to Lateral Loading

This study investigates the interaction between soil and pipeline in sand subjected to lateral ground displacements with emphasis on the peak force exerted to a bended elbow-pipe. A series of three-dimensional (3D) finite-element (FE) analyses were performed in both opening and closing modes of the elbow section for different initial pipe bending angles. To model the mechanical behavior of sands, two soil models were adopted: Mohr-Coulomb and Nor-Sand soil model. Investigations also included the effects of pipe embedment depth and soil density. Results show that the opening mode exhibits higher ultimate forces and greater localized deformations than the closing mode. Nondimensional charts that account for pipeline location, bending angle, and soil density are developed. Soil-spring pipeline analyses of an elbow-pipe were performed using modified F-δ soil-spring models based on the 3D FE results and were compared to the findings of conventional spring model analyses using the standard two-dimensional soil-spring model. Results show that the pipe strain does not change in the closing mode case. However, in the opening mode case, the pipe strain computed by the modified analysis is larger than that by the conventional analysis and the difference is more pronounced when the pipe stiffness is stiffer. © 2011 American Society of Civil Engineers.

Small-diameter membrane reflector wrinkling

This study concerns the wrinkling performance of thin membranes for use as novel reflectors in space-based telescopes. We introduce small-scale experiments for inducing and interrogating wrinkling patterns in at membranes, and we capture these details computationally by performing a range of finite element analysis. The overall aim is to assess the sophistication of modelling, to verify the feasibility of a small-diameter reector concept proposed in accompanying work. © 2009 by the American Institute of Aeronautics and Astronautics, Inc.

200-V lateral superjunction LIGBT on partial SOI

This letter presents a novel lateral superjunction lateral insulated-gate bipolar transistor (LIGBT) in partial silicon-on-insulator (SOI) technology in 0.18-μm partial-SOI (PSOI) high-voltage (HV) process. For an n-type superjunction LIGBT, the p-layer in the superjunction drift region not only helps in achieving uniform electric field distribution but also contributes to the on-state current. The superjunction LIGBT successfully achieves a breakdown voltage (BV) of 210 V with an R dson of 765 mΩ ̇ mm 2. It exhibits half the value of specific on-state resistance R dson and three times higher saturation current (I dsat) for the same BV, compared to a comparable lateral superjunction laterally diffused metal-oxide-semiconductor fabricated in the same technology. It also performs well in higher temperature dc operation with 38.8% increase in R dson at 175°C, compared to the room temperature without any degradation in latch-up performance. To realize this device, it only requires one additional mask layer into X-FAB 0.18-μm PSOI HV process. © 2012 IEEE.

Task-level control of the lateral leg spring model of cockroach locomotion

The Lateral Leg Spring model (LLS) was developed by Schmitt and Holmes to model the horizontal-plane dynamics of a running cockroach. The model captures several salient features of real insect locomotion, and demonstrates that horizontal plane locomotion can be passively stabilized by a well-tuned mechanical system, thus requiring minimal neural reflexes. We propose two enhancements to the LLS model. First, we derive the dynamical equations for a more flexible placement of the center of pressure (COP), which enables the model to capture the phase relationship between the body orientation and center-of-mass (COM) heading in a simpler manner than previously possible. Second, we propose a reduced LLS "plant model" and biologically inspired control law that enables the model to follow along a virtual wall, much like antenna-based wall following in cockroaches. © 2006 Springer.

The lateral superjunction PSOI LIGBT and LDMOSFET

This paper presents a comparison between the superjunction LIGBT and the LDMOSFET in partial silicon-on-insulator (PSOI) technology in 0.18μm PSOI HV process. The superjunction drift region helps in achieving uniform electric field distribution in both structures but also contributes to the on-state current in the LIGBT. The superjunction LIGBT successfully achieves breakdown voltage (BV) of 210V with Rdson of 765mΩ.mm2. It exhibits reduced specific on-state resistance Rdson and higher saturation current (Idsat) for the same BV compared to a compatible lateral superjunction LDMOS in the same technology. © 2012 IEEE.