End-of-range defects in germanium and their role in boron deactivation

We investigated the thermal evolution of end-of-range (EOR) defects in germanium and their impact on junction thermal stability. After solid-phase epitaxial regrowth of a preamorphized germanium layer, EOR defects exhibiting dislocation loop-like contrast behavior are present. These defects disappear during thermal annealing at 400 °C, while boron electrical deactivation occurs. After the whole defect population vanishes, boron reactivation is observed. These results indicate that germanium self-interstitials, released by EOR defects, are the cause of B deactivation. Unlike in Si, the whole deactivation/reactivation cycle in Ge is found to take place while the maximum active B concentration exceeds its solubility limit. © 2010 American Institute of Physics.

Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

Atomic force microscopy (AFM) and scanning electron microscopy (SEM) with cathodoluminescence (CL) were performed on exactly the same defects in a blue-emitting InGaN/GaN multiple quantum well (QW) sample enabling the direct correlation of the morphology of an individual defect with its emission properties. The defects in question are observed in AFM and SEM as a trench partially or fully enclosing a region of the QW having altered emission properties. Their sub-surface structure has previously been shown to consist of a basal plane stacking fault (BSF) in the plane of the QW stack, and a stacking mismatch boundary (SMB) which opens up into a trench at the sample surface. In CL, the material enclosed by the trench may emit more or less intensely than the surrounding material, but always exhibits a redshift relative to the surrounding material. A strong correlation exists between the width of the trench and both the redshift and the intensity ratio, with the widest trenches surrounding regions which exhibit the brightest and most redshifted emission. Based on studies of the evolution of the trench width with the number of QWs from four additional MQW samples, we conclude that in order for a trench defect to emit intense, strongly redshifted light, the BSF must be formed in the early stages of the growth of the QW stack. The data suggest that the SMB may act as a non-radiative recombination center. © 2013 American Institute of Physics.

Silver paint as a soldering agent for DyBaCuO single-domains welding

Silver paint has been tested as a soldering agent for DyBaCuO single-domain welding. Junctions have been manufactured on Dy-Ba-Cu-O single-domains cut either along planes parallel to the c-axis or along the ab-planes. Microstructural and superconducting characterisations of the samples have been performed. For both types of junctions, the microstructure in the joined area is very clean: no secondary phase or Ag particles segregation has been observed. Electrical and magnetic measurements for all configurations of interest are reported $\rho(T)$ curves, and Hall probe mapping). The narrow resistive superconducting transition reported for all configurations shows that the artificial junction does not affect significantly the measured superconducting properties of the material.

Theory of defects in amorphous semiconductors

We review the electronic structure of defects in aSi:H, aGaAs and aSi3N4, emphasising in aSi:H the doping mechanism, the evidence that its dangling bond defect has a small electron-lattice coupling and a positive correlation energy, and possible atomic mechanisms for the Staebler-Wronski effect. © 1985.

Modelling failure of composite specimens with defects under compression loading

Composite structures exhibit many different failure mechanisms, but attempts to model composite failure frequently make a priori assumptions about the mechanism by which failure will occur. Wang et al. [1] conducted compressive tests on four configurations of composite specimen manufactured with out-of-plane waviness created by ply-drop defects. There were significantly different failures for each case. Detailed finite element models of these experiments were developed which include competing failure mechanisms. The model predictions correlate well with experimental results-both qualitatively (location of failure and shape of failed specimen) and quantitatively (failure load). The models are used to identify the progression of failure during the compressive tests, determine the critical failure mechanism for each configuration, and investigate the effect of cohesive parameters upon specimen strength. This modelling approach which includes multiple competing failure mechanisms can be applied to predict failure in situations where the failure mechanism is not known in advance. © 2013 Elsevier Ltd. All rights reserved.