131 resultados para waveguide tapers


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Mode-locked and single-longitudinal-mode waveguide lasers, manufactured by femtosecond laser writing in Er-Yb-doped phosphate glasses, are presented. Transform-limited 1.6-ps pulses and a cw output power exceeding 50 mW have been obtained in the two regimes. © 2007 Optical Society of America.

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The all-optical nonlinearity of a quantum well waveguide is studied by measuring the intensity dependent transmission through a Fabry-Perot cavity formed around the guide. Values for the nonlinear refractive index coefficient, η 2, at a wavelength of 1.06μm are obtained for light whose polarisation is either parallel or perpendicular to the quantum well layers. A simple measurement to estimate the two photon absorption coefficient, B2, using relatively low optical power levels is also described.

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This paper describes a measurement on a GaAs quantum well waveguide with a high built in field across the quantum wells at a wavelength far from the bandedge. The device structure used for the measurement has been fabricated at STC Technology Ltd and is that of a standard laser ridge structure. In fabrication double heterostructure layers are grown on a [001] n + GaAs substrate, with the active region containing two intrinsic GaAs quantum wells of 10nm thickness separated by 10nm. A 4μm wide ridge is etched to provide transverse optical guiding. The experimental work has involved the use of 1.06μm wavelength light from a Q-switched Nd:YAG laser. Any induced change in refractive index is determined by measuring the change in transmission of the quantum well waveguide Fabry-Perot cavity. The waveguide is placed on a Peltier temperature controller to allow thermal tuning.

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The first demonstration of a directly modulated microring laser array is presented for on-off keyed, wavelength- division- multiplexed fiber-optic data transmission. GaInAsP-InP microring resonators oscillating at separate wavelengths in the 1.5-μm band are vertically coupled to a common passive waveguide bus, which is fabricated on the reverse side of the InP membrane. Two microrings defined with radii for a wavelength channel separation of 6 nm have been assessed for both individual and simultaneous operation. Negligible power penalty (<0.2 dB) is observed for wavelength-division-multiplexed operation with and without transmission over a 25-km fiber span in a manner which indicates low crosstalk between the integrated sources. A device area of less than 0.12 mm2 per microring on a common passive bus allows a highly scalable solution for short-reach wavelength-multiplexed links. © 2008 IEEE.

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Siloxane Polymer exhibits low loss in the 800-1500 nm range which varies between 0.01 and 0.66 dB cm1. It is for such low loss the material is one of the most promising candidates in the application of engineering passive and active optical devices [1, 2]. However, current polymer fabrication techniques do not provide a methodology which allows high structurally solubility of Er3+ ions in siloxane matrix. To address this problem, Yang et al.[3] demonstrated a channel waveguide amplifier with Nd 3+-complex doped polymer, whilst Wong and co-workers[4] employed Yb3+ and Er3+ co-doped polymer hosts for increasing the gain. In some recent research we demonstrated pulsed laser deposition of Er-doped tellurite glass thin films on siloxane polymer coated silica substrates[5]. Here an alternative methodology for multilayer polymer-glass composite thin films using Er3+ - Yb3+ co-doped phosphate modified tellurite (PT) glass and siloxane polymer is proposed by adopting combinatorial pulsed laser deposition (PLD). © 2011 IEEE.

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We propose a new solid state implementation of a quantum computer (quputer) using ballistic single electrons as flying qubits in 1D nanowires. We use a single electron pump (SEP) to prepare the initial state and a single electron transistor (SET) to measure the final state. Single qubit gates are implemented using quantum dots as phase shifters and electron waveguide couplers as beam splitters. A Coulomb coupler acts as a 2-qubit gate, using a mutual phase modulation effect. Since the electron phase coherence length in GaAs/AlGaAs heterostructures is of the order of 30$\mu$m, several gates (tens) can be implemented before the system decoheres.

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We report the first measurement of two-photon absorption (TPA) and self-phase modulation in an InGaAsP/InP multi-quantum-well waveguide. The TPA coefficient, β2, was found to be 60±10 cm/GW at 1.55 μm. Despite operating at 200 nm from the band edge, self-phase modulation as high as 8±2 rad was observed for 30-ps optical pulses at 3.8-W peak input power. A theoretical calculation indicates that this enhanced phase modulation is primarily due to bandfilling in the quantum wells and the free-carrier plasma effect.

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A new kind of Q switched laser, the bow tie laser is introduced. This type of laser permits large area facets at both ends so that generation of high optical powers involve low optical intensities to prevent optical damage. The incorporation of doubled tapered waveguide structure to the Q switched multicontact laser has increased the optical pulse energies and peak powers of the laser.

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In this study, a collimating lens is introduced at the output facet of a tapered waveguide laser to compensate for the divergence of the optical mode. The collimating lens is shown to enhance the laser efficiency while simultaneously reducing the far field divergence.

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A single-contact, mode-hop-free, single longitudinal mode laser operating cw under large signal modulation at 2.5 Gbit/s at room temperature was created by introducing a short etched region around the ridge-waveguide of a Fabry-Perot laser. The device could be suitable for use in extended range data communications applications.

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It is shown that 2D lattice gratings, despite being placed outside the waveguide region, exhibit sufficiently strong coupling coefficients that optical modes rapidly couple transversely into the etched grating region, yielding high coupling coefficients of 270cm-1. This performance allows mode-hop-free lasing operation in DBR structures.

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The maintenance of the growth of the multibillion-dollar semiconductor industry requires the development of techniques for the fabrication and characterisation of nanoscale devices. Consequently, there is great interest in photolithography techniques such as extreme UV and x-ray. Both of these techniques are extremely expensive and technologically very demanding. In this paper we describe research on the feasibility of exploiting x-ray propagation within carbon nanotubes (CNT's) for the fabrication and characterisation of nanoscale devices. This work discusses the parameters determining the design space available. To demonstrate experimentally the feasibility of x-ray propagation, arrays of carbon nanotubes have been grown on silicon membranes. The latter are required to provide structural support for the CNT's while minimising energy loss. To form a waveguide metal is deposited between the nanotubes to block x-ray transmission in this region at the same time as cladding the CNT's. The major challenge has been to fill the spaces between the CNT's with material of sufficient thickness to block x-ray transmission while maintaining the structural integrity of the CNT's. Various techniques have been employed to fill the gaps between the nanotubes including electroplating, sputtering and evaporation. This work highlights challenges encountered in optimising the process.

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The paper reports the results of a high-quality pulse source incorporating a gain-switched laser diode followed by a novel compact two-cascade fibre compression scheme. The pulse compression scheme incorporates a dispersive delay line and a nonlinear pulse compressor based on a dispersion-imbalanced fibre loop mirror (DILM). We analyse and demonstrate for the first time significant improvement of the loop performance by means of the chirped pulse switching. As a result, the DILM provides high-quality nonlinear pulse compression as well as rejection of the nonsoliton component. In the experiment, 20ps pulses from a gain switched laser diode are compressed to a duration of 300fs at a repetition rate in range 70MHz-10GHz. The pulses are pedestal free and transform-limited. Spectral filtering of the output signal by means of a bandpass filter results in generation of wavelength-tuneable picosecond pulses with a duration defined by the filter bandwidth. Alternatively, signal filtering by an arrayed waveguide grating (AWG) results in multichannel picosecond pulse generation for WDM and OTDM applications. The pulse source is built of standard components and is of compact and potentially robust design.

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A vertically aligned multi-walled carbon nanotube (VACNT) film has been characterized by rectangular waveguide measurements. The complex scattering parameters (S-parameters) are measured by a vector network analyzer at X-band frequencies. The effective complex permittivity and permeability of the VACNT film have been extracted using the Nicolson-Ross-Weir (NWR) approach. The extracted parameters are verified by full wave simulations (CST Microwave Studio) and very good agreement has been obtained. A systematic error analysis is presented and the errors are within the acceptable range. The performance of VACNT films as an absorber is examined, and comparison with the conventional carbon loaded materials shows that a 90% size reduction is possible whilst maintaining the same absorption level. © 2011 EUROPEAN MICROWAVE ASSOC.