Experimental demonstration of a transparent graphene millimetre wave absorber with 28% fractional bandwidth at 140 GHz.

The development of transparent radio-frequency electronics has been limited, until recently, by the lack of suitable materials. Naturally thin and transparent graphene may lead to disruptive innovations in such applications. Here, we realize optically transparent broadband absorbers operating in the millimetre wave regime achieved by stacking graphene bearing quartz substrates on a ground plate. Broadband absorption is a result of mutually coupled Fabry-Perot resonators represented by each graphene-quartz substrate. An analytical model has been developed to predict the absorption performance and the angular dependence of the absorber. Using a repeated transfer-and-etch process, multilayer graphene was processed to control its surface resistivity. Millimetre wave reflectometer measurements of the stacked graphene-quartz absorbers demonstrated excellent broadband absorption of 90% with a 28% fractional bandwidth from 125-165 GHz. Our data suggests that the absorbers' operation can also be extended to microwave and low-terahertz bands with negligible loss in performance.

Optical investigations of the effect of solvent and thermal annealing on the optoelectronic properties of Poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) films

Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is one of the most promising conducting polymers that can be used as transparent electrode or as buffer layer for organic electronic devices. However, when used as an electrode, its conductivity has to be optimized either by the addition of solvents or by post-deposition processing. In this work, we investigate the effect of the addition of the polar solvent dimethylsulfoxide (DMSO) to an aqueous PEDOT:PSS solution on its optical and electrical properties by the implementation of the Drude model for the analysis of the measured pseudo-dielectric function by Spectroscopic Ellipsometry from the near infrared to the visible-far ultraviolet spectral range. The results show that the addition of DMSO increases significantly the film conductivity, which reaches a maximum value at an optimum DMSO concentration as it has confirmed by experimentally measured conductivity values. The post-deposition thermal annealing has been found to have a smaller effect on the film conductivity. © 2013 Elsevier B.V.

Plasmonic silver nanoparticles for improved organic solar cells

In the present work we compare the performance of organic solar cells, based on the bulk heterojunction system of P3HT:PCBM when adequate silver nanoparticles (NPs) are incorporated in two distinct places among the device structure. Introduction of NPs on top of the transparent anode revealed better overall performance with an increased efficiency of 17%. Alternatively, placing the NPs on top of the active photovoltaic layer resulted to 25% higher photo-current generation albeit with inferior electrical characteristics (i.e series and shunt resistance). Our findings suggest that enhanced scattering to non-specular directions from NPs site is maximized when penetrating light meets the particles after the polymer blend, but even this mechanism is not sufficient enough to explain the enhanced short circuit current observed. A second mechanism should be feasible; that is plasmon enhancement which is more efficient in the case where NPs are in direct contact with the polymer blend. J-V characteristics measured in the dark showed that NPs placed on top of the ITO film act as enhanced hole conducting sites, as evident by the lower series resistance values in these cells, suggesting this mechanism as more significant in this case. © 2012 Elsevier B.V. All rights reserved.

Highly electron transparent Graphene for field emission triode gates

The enhanced emission performance of a graphene/Mo hybrid gate electrode integrated into a nanocarbon field emission micro-triode electron source is presented. Highly electron transparent gate electrodes are fabricated from chemical vapor deposited bilayer graphene transferred to Mo grids with experimental and simulated data, showing that liberated electrons efficiently traverse multi-layer graphene membranes with transparencies in excess of 50-68%. The graphene hybrid gates are shown to reduce the gate driving voltage by 1.1 kV, whilst increasing the electron transmission efficiency of the gate electrode significantly. Integrated intensity maps show that the electron beam angular dispersion is dramatically improved (87.9°) coupled with a 63% reduction in beam diameter. Impressive temporal stability is noted (<1.0%) with surprising negligible long-term damage to the graphene. A 34% increase in triode perveance and an amplification factor 7.6 times that of conventional refractory metal grid gate electrode-based triodes are noted, thus demonstrating the excellent stability and suitability of graphene gates in micro-triode electron sources. A nanocarbon field emission triode with a hybrid gate electrode is developed. The graphene/Mo gate shows a high electron transparency (50-68%) which results in a reduced turn-on potential, increased beam collimation, reduced beam diameter (63%), enhanced stability (<1% variation), a 34% increase in perveance, and an amplification 7.6 times that of equivalent conventional refractory metal gate triodes. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Dopant compensation in HfO2 and other high K oxides

The theory of doping limits in semiconductors and insulators is applied to the case of wide gap oxides, crystalline, or amorphous, and used to explain that impurities do not in general give rise to gap states or a doping response. Instead, the system tends to form defect complexes or undergo symmetry-lowering reconstructions to expel gap states out of the band gap. The model is applied to impurities, such as trivalent metals, carbon, N, P, and B, in HfO2, the main gate dielectric used in field effect transistors. © 2014 AIP Publishing LLC.