Magnetic sensor with compensation for lead and coil resistance

A measurement system for magnetic fields or electric currents uses a single-core fluxgate, magneto-inductive or magneto-impedance device driven from a radio frequency excitation source. Flux nulling feedback circuitry is provided to maintain the core of the sensor at substantially zero net flux and improve the linearity and dynamic response of the sensor system. A high pass filter is provided for reducing the dc effects of the ohmic resistance of the coil and lead wires on the effectiveness of the flux nulling feedback.

Low on-resistance SOI dual-trench-gate MOSFET

A low specific on-resistance (R-{{\rm on}, {\rm sp}}) integrable silicon-on-insulator (SOI) MOSFET is proposed, and its mechanism is investigated by simulation. The SOI MOSFET features double trenches and dual gates (DTDG SOI): an oxide trench in the drift region, a buried gate inset in the oxide trench, and another trench gate (TG) extended to a buried oxide layer. First, the dual gates form dual conduction channels, and the extended gate widens the vertical conduction area; both of which sharply reduce R-{{\rm on}, {\rm sp}}. Second, the oxide trench folds the drift region in the vertical direction, resulting in a reduced device pitch and R-{{\rm on}, {\rm sp}}. Third, the oxide trench causes multidirectional depletion. This not only enhances the reduced surface field effect and thus reshapes the electric field distribution but also increases the drift doping concentration, leading to a reduced R-{{\rm on}, {\rm sp}} and an improved breakdown voltage (BV). Compared with a conventional SOI lateral Double-diffused metal oxide semiconductor (LDMOS), the DTDG MOSFET increases BV from 39 to 92 V at the same cell pitch or decreases R-{{\rm on}, { \rm sp}} by 77% at the same BV by simulation. Finally, the TG extended synchronously acts as an isolation trench between the high/low-voltage regions in a high-voltage integrated circuit, saving the chip area and simplifying the isolation process. © 2006 IEEE.

An assessment of the blast resistance of sandwich beams

An assessment of the underwater blast resistance of sandwich beams with a prismatic Y-truss core is presented, utilizing three-dimensional finite element calculations. Results show a significant performance benefit for sandwich construction when compared to a monolithic plate of the same mass when the sandwich core combines high shear strength with low compressive strength.

The effect of remodelling and contractility of the actin cytoskeleton on the shear resistance of single cells: a computational and experimental investigation.

The biomechanisms that govern the response of chondrocytes to mechanical stimuli are poorly understood. In this study, a series of in vitro tests are performed, in which single chondrocytes are subjected to shear deformation by a horizontally moving probe. Dramatically different probe force-indentation curves are obtained for untreated cells and for cells in which the actin cytoskeleton has been disrupted. Untreated cells exhibit a rapid increase in force upon probe contact followed by yielding behaviour. Cells in which the contractile actin cytoskeleton was removed exhibit a linear force-indentation response. In order to investigate the mechanisms underlying this behaviour, a three-dimensional active modelling framework incorporating stress fibre (SF) remodelling and contractility is used to simulate the in vitro tests. Simulations reveal that the characteristic force-indentation curve observed for untreated chondrocytes occurs as a result of two factors: (i) yielding of SFs due to stretching of the cytoplasm near the probe and (ii) dissociation of SFs due to reduced cytoplasm tension at the front of the cell. In contrast, a passive hyperelastic model predicts a linear force-indentation curve similar to that observed for cells in which the actin cytoskeleton has been disrupted. This combined modelling-experimental study offers a novel insight into the role of the active contractility and remodelling of the actin cytoskeleton in the response of chondrocytes to mechanical loading.

Numerical investigation of the active role of the actin cytoskeleton in the compression resistance of cells.

Numerous in-vitro studies have established that cells react to their physical environment and to applied mechanical loading. However, the mechanisms underlying such phenomena are poorly understood. Previous modelling of cell compression considered the cell as a passive homogenous material, requiring an artificial increase in the stiffness of spread cells to replicate experimentally measured forces. In this study, we implement a fully 3D active constitutive formulation that predicts the distribution, remodelling, and contractile behaviour of the cytoskeleton. Simulations reveal that polarised and axisymmetric spread cells contain stress fibres which form dominant bundles that are stretched during compression. These dominant fibres exert tension; causing an increase in computed compression forces compared to round cells. In contrast, fewer stress fibres are computed for round cells and a lower resistance to compression is predicted. The effect of different levels of cellular contractility associated with different cell phenotypes is also investigated. Highly contractile cells form more dominant circumferential stress fibres and hence provide greater resistance to compression. Computed predictions correlate strongly with published experimentally observed trends of compression resistance as a function of cellular contractility and offer an insight into the link between cell geometry, stress fibre distribution and contractility, and cell deformability. Importantly, it is possible to capture the behaviour of both round and spread cells using a given, unchanged set of material parameters for each cell type. Finally, it is demonstrated that stress distributions in the cell cytoplasm and nucleus computed using the active formulation differ significantly from those computed using passive material models.

Impact of mode localization on the motional resistance of coupled MEMS resonators

This paper investigates the effect of mode-localization that arises from structural asymmetry induced by manufacturing tolerances in mechanically coupled, electrically transduced Si MEMS resonators. We demonstrate that in the case of such mechanically coupled resonators, the achievable series motional resistance (R x) is dependent not only on the quality factor (Q) but also on the variations in the eigenvector of the chosen mode of vibration induced by mode localization due to manufacturing tolerances during the fabrication process. We study this effect of mode-localization both theoretically and experimentally in two pairs of coupled double-ended tuning fork resonators with different levels of initial structural asymmetry. The measured series R x is minimal when the system is close to perfect symmetry and any deviation from structural symmetry induced by fabrication tolerances leads to a degradation in the effective R x. Mechanical tuning experiments of the stiffness of one of the coupled resonators was also conducted to study variations in R x as a function of structural asymmetry within the system, the results of which demonstrated consistent variations in motional resistance with predictions. © 2012 IEEE.

Anisotropic behaviour in the magnetic field dependence of the low temperature electrical resistance of calcium-doped lanthanum manganate thin films grown by RF magnetron sputtering

We report about the magnetoresistive properties of calcium-doped lanthanum manganate thin films grown by RF magnetron sputtering on single crystalline LaAlO3 and MgO substrates. Two orientations of the magnetic field with respect to the electrical current have been studied: (i) magnetic field in the plane of the film and parallel to the electrical current, and (ii) magnetic field perpendicular to the plane of the film. The film grown on LaAlO 3 is characterised by an unusual magnetoresistive behaviour when the magnetic field is applied perpendicular to the film plane: the appearance of two bumps in the field dependence of the resistance is shown to be related to the occurrence of anisotropic magnetoresistive effects in manganate films. © 2004 Elsevier B.V. All rights reserved.

Non-ohmic contact resistance and field-effect mobility in nanocrystalline silicon thin film transistors

Contact resistance has a significant impact on the electrical characteristics of thin film transistors. It limits their maximum on-current and affects their subsequent behavior with bias. This distorts the extracted device parameters, in particular, the field-effect mobility. This letter presents a method capable of accounting for both the non-ohmic (nonlinear) and ohmic (linear) contact resistance effects solely based upon terminal I-V measurements. Applying our analysis to a nanocrystalline silicon thin film transistor, we demonstrate that contact resistance effects can lead to a twofold underestimation of the field-effect mobility. © 2008 American Institute of Physics.

Investigating vibration dyanmics of cross-coupled MEMS resonators for reduced motional resistance

This paper investigates the vibration dynamics of a closed-chain, cross-coupled architecture of MEMS resonators. The system presented here is electrostatically transduced and operates at 1.04 MHz. Curve veering of the eigenvalue loci is used to experimentally quantify the coupling spring constants. Numerical simulations of the motional resistance variation against induced perturbation are used to assess the robustness of the cross-coupled system as opposed to equivalent traditional open-ended linear one-dimensional coupling scheme. Results show improvements of as much as 32% in the motional resistance between the cross-coupled system and its one-dimensional counterpart. © 2013 IEEE.