A new, fast response CO2 sensor

The inability of emissions reduction methods to meet upcoming legislation without an unacceptable increase in vehicle cost is a major problem of automobile manufacturer. This work aims to develop a cost-effective reduction of automobile emissions. A prototype CO2 sensor with 5 msec response time was built and bench tested, then used on an engine. The sensor design was based on standard emissions measurement technology using non-dispersive IR absorption. An improved sensor has now been completed with significant improvements in terms of signal to noise ratio and long-term stability. The improved sensor will be used to measure CO2 concentrations on three different engines. The results will then be used to validate engine and catalyst models and to propose control strategies aimed at reducing overall emissions. A brief description of the sensor itself was presented. Original is an abstract.

Starting-up roadmapping fast

Technology roadmapping is a powerful technique for supporting technology management and planning in the firm. The roadmap enables the evolution of markets, products and technologies to be explored, together with the linkages between the various perspectives. A process called T-Plan, which has been developed to support the rapid initiation of roadmapping and thus address these challenges is described.

Fast and compact simulation models for a variety of FET nano devices by the CMOS EKV equations

In this paper we explore the possibility of using the equations of a well known compact model for CMOS transistors as a parameterized compact model for a variety of FET based nano-technology devices. This can turn out to be a practical preliminary solution for system level architectural researchers, who could simulate behaviourally large scale systems, while more physically based models become available for each new device. We have used a four parameter version of the EKV model equations and verified that fitting errors are similar to those when using them for standard CMOS FET transistors. The model has been used for fitting measured data from three types of FET nano-technology devices obeying different physics, for different fabrication steps, and under different programming conditions. © 2009 IEEE NANO Organizers.